Patents by Inventor Toshiya Suzuki

Toshiya Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200238357
    Abstract: Provided is a coated steel sheet including a steel sheet, a first aluminum coating layer provided on a first surface of the steel sheet, a zinc compound layer or a metallic zinc layer provided on a surface of the first aluminum coating layer, and a second aluminum coating layer provided on a second surface of the steel sheet, as an outermost surface of the steel sheet. Further provided are a coated steel sheet coil using this coated steel sheet, and a method of producing a hot-press formed article, as well as an automobile part using a press formed article produced by the method of producing a hot-press formed article.
    Type: Application
    Filed: September 28, 2018
    Publication date: July 30, 2020
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Masahiro KUBO, Yoshiaki NAKAZAWA, Toshiya SUZUKI, Naruhiko NOMURA, Soshi FUJITA, Hideaki IRIKAWA, Masahiro FUDA
  • Publication number: 20200227250
    Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.
    Type: Application
    Filed: March 23, 2020
    Publication date: July 16, 2020
    Inventors: Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Gido Van Der Star, Toshiya Suzuki
  • Patent number: 10710136
    Abstract: This press-forming apparatus is a press-forming apparatus for manufacturing a press-formed article from a workpiece sheet by moving at least one of a die and a punch so as to be close to each other in a press-forming direction, the press-formed article having a top portion, a first sidewall portion, and a second sidewall portion, the first sidewall portion and the second sidewall portion being connected to ridge portions formed on both edges of the top portion, wherein the die includes: a die slide; a first divisional die; a second divisional die; a second divisional die driving unit; a die pad; a die pad driving unit; an insert block; and an insert block driving unit.
    Type: Grant
    Filed: May 11, 2016
    Date of Patent: July 14, 2020
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Misao Ogawa, Masaru Itoh, Toshiya Suzuki, Hiroyuki Tanoue, Yasuharu Tanaka
  • Publication number: 20200166916
    Abstract: In a board production line having multiple work devices arranged to transfer a board from upstream to downstream and perform a predetermined operation on the board, the board production line comprising: a shared folder having storage areas configured to store board-related information, the storage areas being multiply divided according to the number of the work devices, and transferring the board-related information among the storage areas, in conjunction with transferring the board, with a first work device capable of accessing the storage areas among the multiple work devices, and a management proxy section configured to access the shared folder in place of a second work device which cannot access the storage areas, and configured to manage the board-related information so that the board-related information can be transferred among the storage areas.
    Type: Application
    Filed: July 10, 2017
    Publication date: May 28, 2020
    Applicant: FUJI CORPORATION
    Inventors: Yoshiharu TANIZAWA, Toshiya SUZUKI, Masahiro TAKEDA
  • Publication number: 20200101514
    Abstract: Provided is a press-formed article manufacturing method including a first step of pressing a blank with the first pressing apparatus to form a first intermediate formed article having a pair of bent portions that is bent to one side in the plate thickness direction and having a spacing between the bent portions that is narrower than the width of the top plate and equal to or more than the width of the top portion of the convex portion, and a second step of moving the second die relative to the second punch side punch with respect to the die pad and the second punch and forming a second intermediate formed article, having the standing wall formed therein, with the second die and the second punch, in a state where a portion between the bent portions is sandwiched between the die pad protruding from the second die to the second punch side punch, and the convex portion, with one side of the first intermediate formed article in the plate thickness direction as the convex portion side of the second pressing apparat
    Type: Application
    Filed: June 7, 2018
    Publication date: April 2, 2020
    Applicants: NIPPON STEEL CORPORATION, Toyoda Iron Works Co., Ltd.
    Inventors: Toshiya SUZUKI, Yoshiaki NAKAZAWA, Makoto MURAI, Yasunobu ISHINO
  • Publication number: 20200094885
    Abstract: A hat member 1 includes a top-plate portion 13, first ridges 113, and two side walls 11. The two side walls have a middle hardness Dc of 300 HV or higher. Each of the two side walls 11 includes a softened portion L and a strength-transition portion T adjacent to the softened portion L. The softened portion L has a hardness Dn lower than the middle hardness Dc by at least 8% (Dc?Dn?0.08Dc). The strength-transition portion T extends 0.5 mm or longer from the softened portion L toward the first end of the side wall. The strength-transition portion T has a hardness Dt that transitionally changes within the range of 8% to 1% lower than the middle hardness Dc (0.92Dc?Dt?0.99Dc). The hat member 1 further includes two second ridges 114 and two flanges 14.
    Type: Application
    Filed: March 20, 2018
    Publication date: March 26, 2020
    Inventors: Masahiro Kubo, Yoshiaki Nakazawa, Naruhiko Nomura, Toshiya Suzuki
  • Patent number: 10600637
    Abstract: Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: March 24, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Toshiya Suzuki, Viljami J. Pore, Hannu Huotari
  • Publication number: 20200075322
    Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.
    Type: Application
    Filed: September 19, 2019
    Publication date: March 5, 2020
    Inventors: Toshiya Suzuki, Viljami J. Pore
  • Patent number: 10580645
    Abstract: Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: March 3, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Shinya Ueda, Taishi Ebisudani, Toshiya Suzuki
  • Publication number: 20200066512
    Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.
    Type: Application
    Filed: May 3, 2018
    Publication date: February 27, 2020
    Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
  • Publication number: 20200042029
    Abstract: An output circuit includes: a first p-type transistor having a source connected to VDDH and a gate to which an input signal is fed; and a second p-type transistor having a source connected to the drain of the first p-type transistor, a drain connected to an output terminal, and a gate connected to a first node. A capacitor has one terminal to which the input signal is fed and the other terminal connected to the first node. A first n-type transistor has a source connected to VDDL, a drain connected to the first node, and a gate to which a signal corresponding to the input signal is fed. A second n-type transistor has a source and a gate both connected to VDDL and a drain connected to the first node.
    Type: Application
    Filed: October 11, 2019
    Publication date: February 6, 2020
    Inventors: Kyota SHIMIZU, Toshiya SUZUKI, Tomohiko KOTO
  • Patent number: 10550001
    Abstract: Provided is a metallic impurity-free graphite material utilizing Joule heat generation with well-balanced resistances at room temperature and at high temperatures. The graphite material has a specific resistance at 25° C. (?25) of 10.0 ??·m or more and 12.0 ??·m or less; a specific resistance at 1600° C. (?1600) of 9.5 ??·m or more and 11.0 ??·m or less; a ratio (?1600/?25) of specific resistance at 1600° C. to that at 25° C. of 0.85 or more and 1.00 or less; a temperature at which the minimum specific resistance (?min) appears of 500° C. or higher and 800° C. or lower; a ratio (?min/?25) of the minimum specific resistance to the specific resistance at 25° C. of 0.70 or more and 0.80 or less; and a bulk density of 1.69 g/cm3 or more and 1.80 g/cm3 or less.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: February 4, 2020
    Assignee: NIPPON TECHNO-CARBON CO., LTD.
    Inventors: Hidehiko Usuba, Toshiya Suzuki
  • Publication number: 20200024748
    Abstract: Provided are a plated steel sheet for hot stamping including: a plated steel sheet body including a steel sheet and an aluminum plating layer provided on one side or both sides of the steel sheet; and a zinc-based metal soap film provided on a surface of the plated steel sheet body on a side of the aluminum plating layer and having an adhesion amount of from 7.1 to 19.8 g/m2 based on a Zn amount (when, in the plated steel sheet body, a zinc oxide film is on the surface of an aluminum plating layer, the total adhesion amount of the zinc oxide film and the zinc-based metal soap film is from 7.1 to 19.8 g/m2 based on a Zn amount.), and a method of manufacturing such a sheet. Also provided are a method of manufacturing a hot-stamped component using the plated steel sheet for hot stamping, and a method of manufacturing a vehicle using a stamped component manufactured by a method of manufacturing a hot-stamped component.
    Type: Application
    Filed: December 21, 2017
    Publication date: January 23, 2020
    Applicant: NIPPON STEEL CORPORATION
    Inventors: Masahiro KUBO, Yoshiaki NAKAZAWA, Toshiya SUZUKI, Narihiko NOMURA, Soshi FUJITA, Hideaki IRIKAWA
  • Publication number: 20200024107
    Abstract: An elevator door panel including a front plate, a thermal insulation member, a fixing member, and a longitudinal reinforcement plate, wherein four bent parts are formed by bending upper and lower ends and both side ends of the front plate into a U shape toward the back surface, the longitudinal reinforcement plate is connected to the bent parts by two brim parts on the back surface of the front plate while forming a space between the back surface and the longitudinal reinforcement plate, and the thermal insulation member is provided in the space formed between the longitudinal reinforcement plate and the back surface and fixed by the fixing member.
    Type: Application
    Filed: July 13, 2016
    Publication date: January 23, 2020
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Toshiya SUZUKI
  • Patent number: 10510529
    Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: December 17, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Toshiya Suzuki, Viljami J. Pore
  • Publication number: 20190378711
    Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.
    Type: Application
    Filed: August 19, 2019
    Publication date: December 12, 2019
    Inventors: Toshiya Suzuki, Viljami J. Pore, Shang Chen, Ryoko Yamada, Dai Ishikawa, Kunitoshi Namba
  • Patent number: 10493512
    Abstract: A method of manufacturing a press-molded article includes: projecting an inner pad, provided at an apex portion of a punch, from the punch toward a side of a die, and disposing a metal sheet blank on the inner pad; and projecting a die pad, provided at the die, from the die toward a side of the punch to dispose the die pad at a position separated from the inner pad by a predetermined distance that is greater than a plate thickness of the metal sheet blank; forming a side walls by moving the die toward the punch side relative to the die pad, the inner pad, and the punch, and integrating the die pad with the die; and forming a top plate by moving the die and the die pad, which have been integrated, and the inner pad, toward the punch side relative to the punch.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: December 3, 2019
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Toshiya Suzuki, Yoshiaki Nakazawa, Masahiro Nakata
  • Publication number: 20190352188
    Abstract: Provided is a metallic impurity-free graphite material utilizing Joule heat generation with well-balanced resistances at room temperature and at high temperatures. The graphite material has a specific resistance at 25° C. (?25) of 10.0 ??·m or more and 12.0 ??·m or less; a specific resistance at 1600° C. (?1600) of 9.5 ??·m or more and 11.0 ??·m or less; a ratio (?1600/?25) of specific resistance at 1600° C. to that at 25° C. of 0.85 or more and 1.00 or less; a temperature at which the minimum specific resistance (?min) appears of 500° C. or higher and 800° C. or lower; a ratio (?min/?25) of the minimum specific resistance to the specific resistance at 25° C. of 0.70 or more and 0.80 or less; and a bulk density of 1.69 g/cm3 or more and 1.80 g/cm3 or less.
    Type: Application
    Filed: August 23, 2018
    Publication date: November 21, 2019
    Inventors: Hidehiko Usuba, Toshiya Suzuki
  • Patent number: 10471493
    Abstract: Disclosed is a method to manufacture a pressed component from an intermediate stock, which includes two bent portions with a spacing thereof narrower than a width of a top plate of the pressed component, by employing a press including a die having a die pad and a punch having an inner pad, the method including: gripping a portion between the bent portions with the inner pad and the die pad in a state in which the inner pad projects from the punch and the die pad projects from the die; moving the die toward the punch side to form vertical walls of the pressed component with the die and the punch; and integrating the die and the die pad and then moving the die, the die pad and the inner pad toward the punch side to form the top plate.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: November 12, 2019
    Assignee: NIPPON STEEL CORPORATION
    Inventors: Toshiya Suzuki, Yoshiaki Nakazawa, Masahiro Nakata
  • Publication number: 20190338381
    Abstract: A method for manufacturing a quenched molding according to the present disclosure is a method including a first heat treatment process of heating a blanked steel material to a temperature higher than its Ac3 transformation point to perform austenite transformation, and then cooling to induce martensite transformation or bainite transformation, and a second heat treatment process of heating the steel material that has undergone the first heat treatment process to a temperature higher than the Ac3 transformation point to perform austenite transformation, and then cooling to induce martensite transformation. After the steel material has been heated to a temperature higher than the Ac3 transformation point in at least one process from out of the first heat treatment process or the second heat treatment process, molding is completed at a temperature higher than an Ar3 transformation point.
    Type: Application
    Filed: November 22, 2017
    Publication date: November 7, 2019
    Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION
    Inventors: Yoshiaki NAKAZAWA, Shinichiro TABATA, Kazuo HIKIDA, Toshiya SUZUKI, Atsuo KOGA, Koichi HAMADA