Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.

Abstract: A semiconductor device according to an embodiment includes: a wide bandgap semiconductor layer; a gate electrode; and a gate insulating layer disposed between the wide bandgap semiconductor layer and the gate electrode, including a first silicon oxide film, a second silicon oxide film between the first silicon oxide film and the gate electrode, and a first aluminum oxynitride film between the first silicon oxide film and the second silicon oxide film, and having a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the first aluminum oxynitride film which is lower than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position, closer to the second silicon oxide film than the first position, in the first aluminum oxynitride film.

Abstract: A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.

Abstract: A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is ½ of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5×1019 atoms/cm3 or less.

Abstract: According to one embodiment, a light-emitting element includes a substrate, a first electrode, a first layer, a second electrode, a light-emitting layer, and a second layer. The substrate, the second electrode, and the first layer are light-transmissive. A refractive index of the first layer is lower than a refractive index of the substrate. At least a portion of the first layer is provided between the first electrode and a portion of the substrate. The second electrode is provided between the first electrode and at least a portion of the first layer. The light-emitting layer is provided between the first electrode and the second electrode. The second layer is light-transmissive. The second layer is configured to modify a travel direction of light incident on the second layer. At least a portion of the second layer is provided between the first electrode and at least a portion of the first layer.

Abstract: According to one embodiment, a light-emitting element includes a substrate, a first electrode, a second electrode, and a light-emitting layer. The substrate is light-transmissive. The second electrode is provided between the first electrode and a portion of the substrate. The second electrode is light-transmissive. A light-emitting layer is provided between the first electrode and the second electrode. The substrate includes a first region and a second region. The first region overlaps at least a portion of the light-emitting layer in a first direction, the first direction is from the second electrode toward the first electrode. The second region is provided around the first region along a plane perpendicular to the first direction. The substrate has an opening provided in at least a portion of the second region.

Abstract: According to one embodiment, a detection device includes a substrate, a light detector, a light emitter. The substrate is light-transmissive. The light emitter is provided between the substrate and the light detector. The light emitter includes a first electrode, a light-emitting layer, and a plurality of second electrodes. The first electrode is provided between the light detector and the substrate. The first electrode is light-transmissive. The light-emitting layer is provided between the light detector and the first electrode. The second electrodes are provided between the light detector and the light-emitting layer.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a first light receiving surface and a second light receiving surface opposite to the first light receiving surface, and a diffraction grating which is provided on the first light, receiving surface side of the semiconductor layer and has convex portions. The convex portions are arranged in one direction at a predetermined cycle.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a light receiving surface, a first reflective material which is provided on a side opposite to the light receiving surface side of the semiconductor layer and reflects a light incident from the light receiving surface, and a slope portion provided on a side surface of the semiconductor layer.

Abstract: According to one embodiment, a sensor includes a light emitter and a light sensor. The light emitter includes a first electrode, a second electrode, and a first light emitting layer. The second electrode is light-transmissive. The first light emitting layer is provided between the first electrode and the second electrode. The light sensor includes a third electrode, a fourth electrode, a fifth electrode, a first photoelectric conversion layer, and a second photoelectric conversion layer. the fourth electrode is light-transmissive. The fifth electrode is provided between the third electrode and the fourth electrode. The fifth electrode is light-transmissive. The first photoelectric conversion layer is provided between the third electrode and the fifth electrode. The second photoelectric conversion layer is provided between the fourth electrode and the fifth electrode.

Abstract: In one embodiment, a photo detection device is provided with a first photo detector having a first semiconductor layer with a first light receiving surface, a second photo detector having a second semiconductor layer with a second light receiving surface, and a substrate which is arranged on the first light receiving surface of the first semiconductor layer and the second light receiving surface of the second semiconductor layer and transmits light. A thickness of the first semiconductor layer and a thickness of the second semiconductor layer are different from each other.

Abstract: In one embodiment, a photo detector is provided with a semiconductor layer having a projection portion provided at a side opposite to a light receiving surface side, and a reflective material which covers a surface of the projection portion and reflects a light incident from the light receiving surface. In the photo detector, the projection portion layer has a slope portion, and an angle ? of a slope surface of the slope portion to the light receiving surface satisfies 1 2 ? arcsin ? 1 n 1 ? ? ? 1 2 ? arctan ? L D using a refractive index n1 of the projection portion of the semiconductor layer, a length D of the semiconductor layer in a direction from the light receiving surface toward the projection portion, and a length L of the projection portion in the horizontal direction.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.

Abstract: According to one embodiment, a sensor includes a first light-emitting region, a second light-emitting region, and a light receiving element. At least one of at least a portion of a first light or at least a portion of a second light is incident on the light receiving element. The first light is emitted from the first light-emitting region. The second light is emitted from the second light-emitting region. A second position of the second light-emitting region in a first direction is between a first position of the first light-emitting region in the first direction and a light receiving position of the light receiving element in the first direction. The first direction is from the first light-emitting region toward the second light-emitting region.

Abstract: According to one embodiment, a sensor includes a plurality of light-emitting elements, and a light receiving element. The light-emitting elements are arranged along a first direction and a second direction, the second direction intersecting the first direction. At least a portion of light emitted from each of the light-emitting elements is incident on the light receiving element. The light-emitting elements do not overlap the light receiving element in a third direction, the third direction being perpendicular to the first direction and the second direction. The light-emitting elements include a first light-emitting element and a second light-emitting element. A position of the second light-emitting element in a plane is between a position of the first light-emitting element in the plane and a position of the light receiving element in the plane. The plane includes the first direction and the second direction.

Abstract: According to one embodiment, an organic electroluminescent element includes a first electrode, a reflective layer, an organic light emitting layer, a second electrode, and an optical buffer layer. The reflective layer is provided to face the first electrode. The organic light emitting layer is provided between the first electrode and the reflective layer. The second electrode is provided between the organic light emitting layer and the reflective layer. The optical buffer layer is provided between the second electrode and the reflective layer. The refractive index of the optical buffer layer is lower than a refractive index of the organic light emitting layer. The optical buffer layer includes a gas filled between the second electrode and the reflective layer.

Abstract: According to one embodiment, a sensor includes a light emitter and a light sensor. The light emitter includes a first electrode, a second electrode, and a first light emitting layer. The second electrode is light-transmissive. The first light emitting layer is provided between the first electrode and the second electrode. The light sensor includes a third electrode, a fourth electrode, a fifth electrode, a first photoelectric conversion layer, and a second photoelectric conversion layer. the fourth electrode is light-transmissive. The fifth electrode is provided between the third electrode and the fourth electrode. The fifth electrode is light-transmissive. The first photoelectric conversion layer is provided between the third electrode and the fifth electrode. The second photoelectric conversion layer is provided between the fourth electrode and the fifth electrode.

Abstract: According to one embodiment, an organic electroluminescent element includes a first electrode, a second electrode provided opposite to the first electrode, an organic light emitting layer provided between the first electrode and the second electrode, and a protrusion. The protrusion is provided at least one of between the first electrode and the organic light emitting layer and between the organic light emitting layer and the second electrode.

Abstract: According to one embodiment, an organic electroluminescent element includes a first electrode, a reflective layer provided opposite to the first electrode, an organic light emitting layer provided between the first electrode and the reflective layer, a second electrode provided between the organic light emitting layer and the reflective layer, an optical buffer layer provided between the second electrode and the reflective layer, and a plurality of light extraction portions. The plurality of light extraction portions are provided between the second electrode and the organic light emitting layer. The plurality of light extraction portions are projected from the side provided with the second electrode of the optical buffer layer into the optical buffer layer. The light extraction portions have a refractive index different from a refractive index of the optical buffer layer.