Abstract: A short-range wireless communication device, utilized with a communication partner terminal that executes a cooperative application while switching between foreground and background operations when a predetermined protocol is established between the communication partner terminal and the short-range wireless communication device, and disconnects a protocol by changing the cooperative application from the foreground operation to the background operation, includes: a control device that determines whether a condition of returning the cooperative application from the background operation to the foreground operation is satisfied, determines whether the cooperative application returns to the foreground operation according to an operating status of an application in the communication partner terminal when the condition is satisfied, and transmits a request for establishment of the protocol to the communication partner terminal when the cooperative application returns to the foreground operation.

Abstract: A short-range wireless communication device, utilized with a communication partner terminal that executes a cooperative application while switching between foreground and background operations when a predetermined protocol is established between the communication partner terminal and the short-range wireless communication device, and disconnects a protocol by changing the cooperative application from the foreground operation to the background operation, includes: a control device that determines whether a condition of returning the cooperative application from the background operation to the foreground operation is satisfied, determines whether the cooperative application returns to the foreground operation according to an operating status of an application in the communication partner terminal when the condition is satisfied, and transmits a request for establishment of the protocol to the communication partner terminal when the cooperative application returns to the foreground operation.

Abstract: A vehicular communication system includes a mobile communication terminal, an in-vehicle apparatus, and a distribution center to distribute a content. The mobile communication terminal includes a terminal-side application to execute a content. The in-vehicle apparatus includes a vehicle-side application to execute a content. If the mobile communication terminal and the in-vehicle apparatus are not communicably connected, the terminal-side application of the mobile communication terminal executes a content acquired from the distribution center. If the mobile communication terminal and the in-vehicle apparatus are communicably connected, the terminal-side application and the vehicle-side application are caused to be cooperative and the vehicle-side application of the in-vehicle apparatus is enabled to execute a content acquired by the mobile communication terminal.

Abstract: A vehicular communication system includes a mobile communication terminal, an in-vehicle apparatus, and a distribution center to distribute a content. The mobile communication terminal includes a terminal-side application to execute a content. The in-vehicle apparatus includes a vehicle-side application to execute a content. If the mobile communication terminal and the in-vehicle apparatus are not communicably connected, the terminal-side application of the mobile communication terminal executes a content acquired from the distribution center. If the mobile communication terminal and the in-vehicle apparatus are communicably connected, the terminal-side application and the vehicle-side application are caused to be cooperative and the vehicle-side application of the in-vehicle apparatus is enabled to execute a content acquired by the mobile communication terminal.

Abstract: In a data distributing party, original data is divided into sub-blocks. Each sub-block is encoded according to a predetermined encoding/decoding formula, to divide each sub-block into sub-symbols. In the predetermined encoding/decoding formula, data prior to encoding can be restored by obtaining a predetermined number of data from data posterior to encoding. Each symbol is generated by retrieving sub-symbols from respective sub-blocks and each generated symbol is distributed. In contrast, in a data receiving party, when completing the reception of the symbols not less than a predetermined number necessary for restoring, the sub-symbols are extracted from the respective received symbols in an order of receiving the symbols to restore the sub-blocks posterior to encoding. Each restored sub-block posterior to encoding is decoded according to the above encoding/decoding formula to restore each corresponding sub-block prior to encoding.

Abstract: An apparatus for supplying a semiconductor process gas charged in a large-capacity gas vessel to a plant where the gas is used, after reduction of the pressure of the gas. The gas cylinder 21 is composed essentially of a cylindrical portion 22 and hemispherical portions 23 and 24 formed at the ends of the cylindrical portion respectively. The gas cylinder 21 has a gas charge port 26 at one hemispherical portion and a gas discharge port 27 at the other hemispherical portion both of which opening in alignment with the axis 25 of the cylindrical portion 22. A charge valve 28 and a gas discharge unit 29 having at least a gas vessel valve 30 and a pressure reducing valve 32 are connected to the gas charge port and the gas discharge port respectively. The gas cylinder 21 is housed together with the charge valve 28 and the gas discharge unit 29 in a container 36.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: Superconductized electronic devices, such as a Josephson junction device, or superconductized optical devices represented by a light emitting and receiving devices of semiconductor laser are available using semiconductor materials which normally have no superconducting characteristics. The devices can operate by controlling the behavior of a Cooper pair in an active region which is formed in the semiconductor in advance using the penetrating phenomenon of the Cooper pair caused in the semiconductor proximate to the superconductor.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: Chemical reactions of superconducting raw materials with active oxygen atoms and their charged particles are accelerated by using at least oxygen plasma in the fabrication process of a superconductive body. Thereby an ionic crystal is grown in a short time, which provides stable superconducting materials of high quality such as high critical temperature and low resistivity. In another aspect, a substrate is irradiated simultaneously with streams of vapor of metal elements, of which a superconductive body is to be composed, and a stream of gas of ions generated in a plasma chamber and film growth is effected while keeping the substrate at a temperature higher than 400.degree. C. to produce a ceramic type superconductive thin film.

Abstract: An oxide superconducting device has a junction structure composed of at least one oxide superconductor and at least one insulator in which carriers have been generated. As the insulator in which carriers have been generated, there can be used, for example, SrTiO.sub.3 doped with Nb. With such a device, rectifying characteristics can be attained in the junction.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: A weak-link Josephson junction is of the type employing a thin film of an oxide superconductor, in which a crystal grain boundary produced reflecting an artificial crystal defect is utilized as the weak-link junction. The crystal grain boundary is formed concretely by a method in which atoms of different species are deposited on the predetermined part of the surface of a substrate, the predetermined part of the surface of a substrate is disturbed, or parts of different crystal face orientations are formed at the surface of a substrate, whereupon the superconducting thin film is epitaxially grown on the substrate, or by a method in which the predetermined part of the superconducting thin film, epitaxially grown on a substrate, is diffused with atoms of different species hampering a superconductivity, or the predetermined part of the superconducting thin film is disturbed, whereupon the superconducting thin film is annealed.

Abstract: A process for fabricating a superconducting oxide thin film is disclosed which comprises the steps of separately evaporating metal elements, of which the superconducting oxide thin film with a desired stoichiometry is to be composed, to a substrate and simultaneously irradiating the substrate with oxygen plasma generated by RF wave or ECR microwave to form a crystalline oxide film without further annealing.

Abstract: An oxide-superconductor improved so as to have a high critical temperature (T.sub.c) comprises an oxide having a K.sub.2 NiF.sub.4 crystalline structure similar to a perovskite crystalline structure and represented by the following formula:(Ba.sub.x Sr.sub.z La.sub.1-x-z).sub.2 Cu.sub.1-w Ag.sub.w O.sub.4(1-y)wherein 0.1<x+z<0.3, w=0, and y.gtoreq.0; or 0.ltoreq.x<1, 0.ltoreq.z<1, 0<w<1, and y.gtoreq.0. This invention also relates to an oxide-superconductor wherein an Na, K, Rb, Cs or F atom is contained in an oxide-superconductor of A.sub.3 Cu.sub.3 O.sub.7 type having at least one of a CuO.sub.6 octahedron and a CuO.sub.5 pentahedron.

Abstract: An electron beam recording and reproducing apparatus which radiates the electron beam emitted from a needle cathode to a disc for recording and reproduction is disclosed. The needle cathode moves on the disc. A magnetic field is applied in the axial direction of the needle cathode in order to converge and radiate the electron beam emitted from the needle cathode to the disc.

Abstract: This invention relates to a liquid metal ion source which melts a source material and extracts ions. Stable extraction of ions of at least one element selected from among As, P and B for a long period of time can be attained by using as a source material an alloy having a composition represented by the formula L.sub.X R.sub.Y M.sub.A wherein X, Y and A each stands for atomic percentage; L at least one element selected from among Pt, Pd and Ag; R at least one element selected from among As, P and B; M at least one element selected from among Ge, Si and Sb; 5<A<50; 40<X<70; and X+Y+A=100.

Abstract: A piezoelectric crystal without spontaneous polarization such as Li.sub.2 B.sub.4 O.sub.7 or quartz crystal is jointed to a cathode on the side opposite to the tip thereof to finely drive the cathode. The surface observation apparatus mounting the cathode makes it possible to observe the surface of a sample at high speeds.