Patents by Inventor Toshiyuki Aida

Toshiyuki Aida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4737679
    Abstract: The present invention relates to an impregnated cathode produced by attaching at least two layered thin films, the thin films comprising an under layer consisting of a high melting point metal thin film composed of, for example, Os, Ru, Rh, Pd, Ir, Pt, Re, Mo, W, Ta, etc., and an over layer consisting of a high melting point metal layer which contains Sc.sub.2 O.sub.3 and which is placed over the layer, on the surface of the impregnated cathode pellet generated by impregnating a refractory porous base body with electron emissive materials. The invention relates also to an electron tube having this cathode. This cathode maintains a low work functional mono-layer stably for a long period of time on its surface.
    Type: Grant
    Filed: February 5, 1986
    Date of Patent: April 12, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Shigehiko Yamamoto, Sadanori Taguchi, Toshiyuki Aida, Isato Watanabe, Susumu Kawase
  • Patent number: 4727287
    Abstract: A gas discharge display panel adapted for effecting display by a plurality of gas discharge elements arranged in a matrix has a cathode formed by coating the substrate surface with a (100) preferred film of a rare earth hexaboride such as LaB.sub.6. The gas discharge display panel can be driven at relatively low voltage.
    Type: Grant
    Filed: June 4, 1986
    Date of Patent: February 23, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Toshiyuki Aida, Tokuumi Fukazawa, Yukio Okamoto
  • Patent number: 4626470
    Abstract: An impregnated cathode comprising a refractory porous body impregnated with an electron emissive material and having an electron emissive surface, and a thin film disposed on the electron emissive surface and composed of a refractory metal and one of Sc, scandium oxide and a mixture thereof. The thin film containing Sc or scandium oxide is generated on the body in subsequent to impregnation of the electron emissive material into the refractory porous body with the result that a mono-atomic layer composed of Ba, Sc and O is maintained on the electron emissive surface over a long period of use.
    Type: Grant
    Filed: July 1, 1985
    Date of Patent: December 2, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Shigehiko Yamamoto, Sadanori Taguchi, Toshiyuki Aida
  • Patent number: 4624833
    Abstract: A liquid metal ion source for emitting P ions, wherein a Cu alloy which contains at most 25 at. % of P and if necessary, further contains Ag, C or Si, and/or B is melted and fed to an emitter tip so as to generate an ion beam under a high electric field.
    Type: Grant
    Filed: November 26, 1984
    Date of Patent: November 25, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Kaoru Umemura, Tohru Ishitani, Toshiyuki Aida, Hifumi Tamura
  • Patent number: 4518890
    Abstract: An impregnated cathode comprises a porous refractory substrate of refractory material such as tungsten containing at least one of scandium oxide particles and oxide particles containing scandium such as (Al, Sc).sub.2 O.sub.3, and an electron emissive material impregnated into pores of the substrate, and has an operating temperature lower by about 300.degree. C. than that of the conventional impregnated cathode containing no scandium oxide particles, or scandium.
    Type: Grant
    Filed: January 6, 1983
    Date of Patent: May 21, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Sadanori Taguchi, Toshiyuki Aida, Shigehiko Yamamoto, Yukio Honda
  • Patent number: 4400648
    Abstract: An impregnated cathode having a complex porous body of one-body construction which is mounted in a metal sleeve and in which a partition layer made of a porous material having a porosity less than 17% is arranged in close contact with an impregnated layer made of a porous material containing an electron emissive material. The aforementioned porous partition layer takes the place of the conventional partition plate of refractory metal. The impregnated cathode according to the present invention can not only have its size reduced without any difficulty but also enjoy a high emission current density with a remarkably small dispersion.
    Type: Grant
    Filed: October 1, 1980
    Date of Patent: August 23, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Sadanori Taguchi, Yukio Honda, Toshiyuki Aida, Ushio Kawabe
  • Patent number: 4310777
    Abstract: A directly heated cathode for an electron tube comprising a base plate made of an alloy containing 20 to 30% by weight of W, 0.12 to 0.28% by weight of Zr and the remainder being Ni and an electron emissive oxide layer disposed directly on the base plate shows good and stable electron emission properties and when it is installed in a television picture tube, the picture tube shows excellent initial properties.
    Type: Grant
    Filed: January 10, 1980
    Date of Patent: January 12, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Fukushima, Ko Soeno, Hisashi Ando, Shigehiko Yamamoto, Toshiyuki Aida
  • Patent number: 4291252
    Abstract: An electron tube cathode has a composite suppression layer structure interposed between the base metal and the electron-emitting material to suppress an interface layer formed through the reaction of the base metal with the electron emissive material. The composite layer structure includes a thin layer of Pt or Re and a layer of oxide of Zr and/or Hf. As a result, the formation of the interface layer is prevented so that the useful life of the electron tube cathode is prolonged.
    Type: Grant
    Filed: November 20, 1979
    Date of Patent: September 22, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Toshiyuki Aida, Shigehiko Yamamoto, Sadanori Taguchi, Isamu Yuito, Yukio Honda, Ushio Kawabe, Akira Misumi, Takao Kawamura, Hiroshi Fukushima, Yoshio Degawa
  • Patent number: 4260665
    Abstract: An electron tube cathode in such a structure comprising a Ni-W-Zr alloy (W content: 20-28 wt. %) having a grain size of 4-10 .mu.m as a base metal, a 1,000-2,000 A-thick Pt film provided on the surface of the base metal, and an electron emitting material layer consisting of alkaline earth metal oxide provided on the Pt film has less emission lowering and less peeling of the electron emitting material layer, even if placed in a long time service. The electron tube cathode can be produced according to a method comprising (i) a step of annealing a base metal of Ni-W-Zr alloy (W content: 20-28 wt. %) at 1,000.degree.-1,200.degree. C., (ii) a step of providing a 1,000-2,000 A thick Pt film on the surface of the base metal, and (iii) a step of providing an electron emitting material layer consisting of alkaline earth metal oxide on the Pt film.
    Type: Grant
    Filed: September 27, 1978
    Date of Patent: April 7, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Toshiyuki Aida, Sadanori Taguchi, Isamu Yuito, Ushio Kawabe, Shigehiko Yamamoto, Yukio Honda, Norio Shibata, Hiroshi Okano