Abstract: A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.

Abstract: A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

Abstract: A semiconductor device superior in heat dissipating performance and permitting reduction of the packaging cost is provided.

Abstract: A semiconductor device includes: a package; two semiconductor chip fixing parts located adjacently to each other in the package; and first and the second semiconductor chips, each of which is fixed on the semiconductor chip fixing part and has a field effect transistor formed therein. A gate lead G1, a source lead S1, and a drain lead D2 are arranged from left to right on the first surface of the package and a drain lead D1, a source lead S2, and a gate lead G2 are arranged from left to right on the second surface. A gap between the source lead S1 and the drain lead D2 is two times a gap between the gate lead G1 and the source lead S1, and a gap between the drain lead D1 and the source lead S2 is two times a gap between the source lead S2 and the gate lead G2.

Abstract: A chip including a power MOS circuit in the high level side and a chip including a power MOS circuit in the low level side are accommodated within one sealing body. In this structure, the leads connecting the drain electrodes of the power MOS circuits in the high level and low level sides are set wide and are projected asymmetrically from both longer sides surfaces of the sealing body. Accordingly, the semiconductor device including a composite power MOSFET can be mounted easily.

Abstract: A semiconductor device to prevent breakage of a semiconductor chip is disclosed. The device incorporates a sealing member, a semiconductor chip and having a source and gate electrodes on a first main surface and a drain electrode on a second main surface, a first electrode plate having an upper surface exposed to an upper surface of the sealing member and a lower surface exposed to a lower surface of the sealing member, and second electrode plates each having a lower surface exposed to the lower surface of the sealing member. The drain electrode of the chip is electrically connected to the drain electrode plate through an adhesive. Stud type bump electrodes are formed by gold wire on the source and gate electrodes and are covered with an electrically conductive adhesive. The bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive.

Abstract: A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved.

Abstract: Disclosed is an aluminum electrolytic capacitor, wherein each of anode and cathode foils is joined to a corresponding portion of a leader line through at least two caulked joint sections formed at each of the opposite ends of the flat portion, and a plurality of pressure-welded joint sections formed between the respective caulked joint sections at the opposite ends. The chaulked joint sections formed at each of the opposite ends of the portion provide a high joint strength. Further, the pressure-welded joint sections formed between the respective caulked-join sections at the opposite ends of the portion allow an electrical connection between the foil and the leader line to be stably obtained at a low resistance. This joint structure can, therefore, be applied to small-size capacitors which have not been able to be obtained by using only caulked joint, to achieve an aluminum electrolytic capacitor having a sufficient joint strength and a highly reliable electrical connection.

Abstract: The present invention provides a semiconductor device having a power transistor of low ON resistance. The semiconductor device includes a metal-made header, a semiconductor chip which is fixed to the header and constitutes a MOSFET, and a sealing body made of insulating resin which covers the semiconductor chip, the header and the like. The semiconductor device further includes a drain lead which is contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and source lead and the gate lead. In such a semiconductor device, a gate electrode pad is arranged at a position close to lead posts of the gate lead and the source lead and a source electrode pad is arranged at a position far from the lead posts of the gate lead and the source lead.

Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Abstract: A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved.

Abstract: An image processing apparatus which processes input image signals in real time. A plurality of image signals are input via input terminals. An external storage device stores a plurality of kinds of procedures for processing to be performed on image signals. A JOG dial specifies at least two kinds of procedures among the stored plurality of kinds of procedures, and enables the specified procedures and a procedure between the specified procedures to be arbitrarily changed and specified. When the procedure between the specified procedures is specified using the JOG dial, a CPU generates the specified procedure by interpolating the specified procedures, and carries out real-time processing on image signals for corresponding channels among the image signals for the plurality of channels according to the generated specified procedure.

Abstract: A video signal processing apparatus 1 and a video processing parameter setting apparatus 2 comprise a video processing apparatus (visual mixer). A parameter value collectively specifying portion 3 specifies in accordance with the order stored in an arpeggiator pattern memory 7, sets of scene data which collectively specify values of a plurality of parameters stored in a scene data memory 6. A changing process portion 4 changes in a given length of time, the values of video processing parameters from the values currently set on the video signal processing apparatus 1 to the parameter values collectively specified as a set of scene data. The changing process is started at a timing corresponding to a change time and completed at a subsequent switch timing. As a result, the video processing apparatus allows for collective specification of parameters with simple operations and smooth switching between video images at the changing of parameter values.

Abstract: Disclosed is an aluminum electrolytic capacitor, wherein each of anode and cathode foils is joined to a corresponding portion of a leader line through at least two caulked joint sections formed at each of the opposite ends of the flat portion, and a plurality of pressure-welded joint sections formed between the respective caulked joint sections at the opposite ends. The caulked joint sections formed at each of the opposite ends of the portion provide a high joint strength. Further, the pressure-welded joint sections formed between the respective caulked-join sections at the opposite ends of the portion allow an electrical connection between the foil and the leader line to be stably obtained at a low resistance. This joint structure can, therefore, be applied to small-size capacitors which have not been able to be obtained by using only caulked joint, to achieve an aluminum electrolytic capacitor having a sufficient joint strength and a highly reliable electrical connection.

Abstract: A novel semiconductor device high in both heat dissipating property and connection reliability in mounting is to be provided. The semiconductor device comprises a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.

Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Abstract: The present invention aims to address a problem of contact failure likely to occur in the joint between an internal lead and an external terminal and to provide a reliable aluminum electrolytic capacitor. To this end, an aluminum electrolytic capacitor of the present invention is structured so that a through-hole provided through an internal lead has a diameter smaller than the outer diameter of an aluminum rivet and the peripheral edge of this through-hole is drawn to provide a cylindrical portion integral with the through-hole.

Abstract: The present invention aims to address a problem of contact failure likely to occur in the joint between an internal lead and an external terminal and to provide a reliable aluminum electrolytic capacitor. To this end, an aluminum electrolytic capacitor of the present invention is structured so that a through-hole provided through an internal lead has a diameter smaller than the outer diameter of an aluminum rivet and the peripheral edge of this through-hole is drawn to provide a cylindrical portion integral with the through-hole.

Abstract: There is provided an aluminum electrolytic capacitor including a hollow capacitor element composed of an anode foil, a cathode foil each with an extracted lead member connected thereto, and a separator between both the foil wound into a coil, an end face of the cathode foil is projected relative to the corresponding face of the anode foil; a elastic sheet which is wound on the periphery of the capacitor element; a cylindrical metallic case having the bottom in which a fixing rod is projected on the center of the bottom for fitting into a hollow hole part of the capacitor element and one or more fixing ribs are provided on the bottom for abutting with the projected end face of the cathode foil; and a sealing plate for covering the upper opening of the metal case which has a pair of terminals formed passing through the sealing plate for connecting to extracted lead member of the capacitor element and a threaded portion for external connection; wherein the metal case has one or more annular extrusions projected