Patents by Inventor Toshiyuki Hata

Toshiyuki Hata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030117762
    Abstract: There is provided an aluminum electrolytic capacitor including a hollow capacitor element composed of an anode foil, a cathode foil each with an extracted lead member connected thereto, and a separator between both the foil wound into a coil, an end face of the cathode foil is projected relative to the corresponding face of the anode foil; a elastic sheet which is wound on the periphery of the capacitor element; a cylindrical metallic case having the bottom in which a fixing rod is projected on the center of the bottom for fitting into a hollow hole part of the capacitor element and one or more fixing ribs are provided on the bottom for abutting with the projected end face of the cathode foil; and a sealing plate for covering the upper opening of the metal case which has a pair of terminals formed passing through the sealing plate for connecting to extracted lead member of the capacitor element and a threaded portion for external connection; wherein the metal case has one or more annular extrusions projected
    Type: Application
    Filed: December 4, 2002
    Publication date: June 26, 2003
    Inventors: Nobuhiro Takeishi, Hiroyuki Kusaka, Kazutoshi Yanai, Kazuhiro Minami, Toshiyuki Hata
  • Patent number: 6573119
    Abstract: A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved.
    Type: Grant
    Filed: July 12, 2001
    Date of Patent: June 3, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Toshinori Hirashima, Munehisa Kishimoto, Toshiyuki Hata, Yasushi Takahashi
  • Publication number: 20030075796
    Abstract: A chip including a power MOS circuit in the high level side and a chip including a power MOS circuit in the low level side are accommodated within one sealing body. In this structure, the leads connecting the drain electrodes of the power MOS circuits in the high level and low level sides are set wide and are projected asymmetrically from both longer sides surfaces of the sealing body. Accordingly, the semiconductor device including a composite power MOSFET can be mounted easily.
    Type: Application
    Filed: October 11, 2002
    Publication date: April 24, 2003
    Inventors: Toshiyuki Hata, Ichio Shimizu
  • Publication number: 20030038360
    Abstract: A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved.
    Type: Application
    Filed: October 7, 2002
    Publication date: February 27, 2003
    Inventors: Toshinori Hirashima, Munehisa Kishimoto, Toshiyuki Hata, Yasushi Takahashi
  • Patent number: 6492739
    Abstract: A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
    Type: Grant
    Filed: March 25, 2002
    Date of Patent: December 10, 2002
    Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.
    Inventors: Kuniharu Muto, Atsushi Nishikizawa, Jyunichi Tsuchiya, Toshiyuki Hata, Nobuya Koike, Ichio Shimizu
  • Patent number: 6479888
    Abstract: A semiconductor device having high output and a method of manufacturing the same are disclosed in which external resistance is reduced and radiating performance is improved.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: November 12, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Toshinori Hirashima, Munehisa Kishimoto, Toshiyuki Hata, Yasushi Takahashi
  • Publication number: 20020096791
    Abstract: A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat- radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
    Type: Application
    Filed: March 25, 2002
    Publication date: July 25, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Kuniharu Muto, Atsushi Nishikizawa, Jyunichi Tsuchiya, Toshiyuki Hata, Nobuya Koike, Ichio Shimizu
  • Patent number: 6392308
    Abstract: A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
    Type: Grant
    Filed: February 28, 2001
    Date of Patent: May 21, 2002
    Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.
    Inventors: Kuniharu Muto, Atsushi Nishikizawa, Jyunichi Tsuchiya, Toshiyuki Hata, Nobuya Koike, Ichio Shimizu
  • Patent number: 6320270
    Abstract: A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat- radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
    Type: Grant
    Filed: February 9, 2000
    Date of Patent: November 20, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Kuniharu Muto, Atsushi Nishikizawa, Jyunichi Tsuchiya, Toshiyuki Hata, Nobuya Koike, Ichio Shimizu
  • Patent number: 6310756
    Abstract: A capacitor of the present invention includes a hollow capacitor element prepared by winding a pair of flat electrodes with a separator sandwiched in-between in such a way that both ends of each respective electrode protrude in a direction opposite to each other, an electrode connecting member connected to each respective end surface of the electrode of the above, by metal plasma-spraying, welding, soldering and adhesion using a conductive adhesive, and a terminal for external connection is connected to the electrode connecting member. A cylindrical metal case contains the capacitor element together with a driving electrolyte and a sealing plate closing the opening of the metal case. A reduction in resistance of electrodes is made possible and, in addition, the capacitor can be made smaller in size and the number of the components can be decreased.
    Type: Grant
    Filed: March 2, 2000
    Date of Patent: October 30, 2001
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Teruhisa Miura, Makoto Fujiwara, Masafumi Okamoto, Haruhiko Handa, Takumi Yamaguchi, Toshiyuki Hata
  • Publication number: 20010006259
    Abstract: A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat- radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
    Type: Application
    Filed: February 28, 2001
    Publication date: July 5, 2001
    Applicant: Hitachi, Ltd.
    Inventors: Kuniharu Muto, Atsushi Nishikizawa, Jyunichi Tsuchiya, Toshiyuki Hata, Nobuya Koike, Ichio Shimizu
  • Patent number: 6104085
    Abstract: A QFP adapted to lowering the heat resistance and increasing the number of pins, and a method of producing the same. The QFP includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
    Type: Grant
    Filed: April 27, 1999
    Date of Patent: August 15, 2000
    Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.
    Inventors: Kuniharu Muto, Atsushi Nishikizawa, Jyunichi Tsuchiya, Toshiyuki Hata, Nobuya Koike, Ichio Shimizu
  • Patent number: 5808359
    Abstract: A QFP adapted to lowering the heat resistance and increasing the number of pins includes a heat-radiating metal plate having bumpers formed at the four corners thereof as a unitary structure, a semiconductor chip mounted on the heat-radiating metal plate, leads provided on the heat-radiating metal plate and surrounding the peripheries of the semiconductor chip, bonding wires for connecting the leads to the semiconductor chip, and a sealing resin member for sealing part of the semiconductor chip, inner leads of the leads, bonding wires and part of the heat-radiating metal plate. The tips of the bumpers integrally formed with the heat-radiating metal plate are positioned outside the tips of the outer leads that are protruding from the sealing resin member. In the QFP producing method, the heat-radiating metal plate having the bumpers and the lead frame having the leads are secured outside the sealing resin member.
    Type: Grant
    Filed: October 25, 1995
    Date of Patent: September 15, 1998
    Assignees: Hitachi, Ltd, Hitachi Tohbu Semiconductor, Ltd.
    Inventors: Kuniharu Muto, Atsushi Nishikizawa, Jyunichi Tsuchiya, Toshiyuki Hata, Nobuya Koike, Ichio Shimizu
  • Patent number: 5366515
    Abstract: An electrolytic capacitor having a capacitor element which includes a plurality of foils, and having also an electrolyte, wherein the plurality of foils and the electrolyte are contained in a cylindrical case having on one of its end surfaces a pair of lead terminals to connect to the capacitor element and on another of its end surfaces an explosion preventive vent is electrically aged. The electrolytic capacitor is placed onto a support table so that the capacitor's end surface having the lead terminals is not below the capacitor's end surface having the explosion preventive vent. Each one of the pair of lead terminals is connected to a respective one of a pair of electrode sections. An electric voltage is then applied across the pair of lead terminals through the pair of electrode sections.
    Type: Grant
    Filed: December 30, 1992
    Date of Patent: November 22, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiromu Kunugihara, Tooru Yamaguchi, Gousuke Mieno, Junkichi Kawamura, Akiyoshi Asou, Tsutomu Sakashita, Toshiyuki Hata, Tetsuya Nakamura