Abstract: There is provided a color processing apparatus that performs color reproduction in accordance with the brightness of a subject at the time of photographing. An acquisition unit acquires image data. A setting unit sets viewing environment parameters for a plurality of luminance ranges based on a luminance histogram of the image data that is acquired. A processing unit performs color conversion processing using a color appearance model, using the viewing environment parameters that are set in accordance with the luminance of pixels of the image data that is acquired.

Abstract: A polycrystalline silicon reactor which can prevent polycrystalline silicon which deposits on the surface of an electrode holding a silicon seed rod from being peeled off is provided. In a polycrystalline silicon reactor which applies an electric current to a silicon seed rod provided within a furnace, thereby heating the silicon seed rod, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod, the reactor includes, at a bottom plate of the furnace, an electrode holder provided so as to be electrically insulated from the bottom plate, and a seed rod holding electrode connected to the electrode holder, and holding the silicon seed rod toward the upside. Concavo-convex portions exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode.

Abstract: The invention is a methacrylic resin composition which includes a methacrylic resin (A) and a saponified polymer (B) that is an alkaline-saponified product of an ethylene-unsaturated carboxylic acid ester copolymer, and the methacrylic resin composition has a concentration of alkali ions of from 0.03 mol/kg to 2.8 mol/kg.

Abstract: First image data obtained by capturing an image of a subject under a first light condition, and second image data obtained by capturing an image of the subject under a second light condition different from the first light condition are input. The sampling positions of colors used to generate correction parameters are acquired. First color signal values are sampled from the sampling positions in the first image data, and second color signal values are sampled from the sampling positions in the second image data. Correction parameters used to correct the first image data which depends on the first light condition into image data which depends on the second light condition are generated based on the first and second color signal values.

Abstract: A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.

Abstract: An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other.

Abstract: An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.

Abstract: Included are determining a position of a pixel serving as an extraction subject by using first image data photographed under a first light source; determining an extraction range corresponding to the determined position, by using a color value of the pixel at the determined position and a color value of a pixel at a peripheral position around the determined position in the first image data; calculating a first representative color value from the first image data and a second representative color value from second image data photographed under a second light source, on the basis of the position of the pixel serving as the extraction subject and the extraction range; and generating a color correction condition for converting a color value depending on the first light source into a color value depending on the second light source.

Abstract: A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports 6A for ejecting raw gas upward in a reactor 1 and gas exhausting ports 7 for exhausting exhaust gas after a reaction are provided on an inner bottom of the reactor 1 in which a plurality of silicon seed rods 4 are stood, the silicon seed rods 4 are heated and the polycrystalline silicon is deposited from the raw gas on the surfaces.

Abstract: The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from ?10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.

Abstract: A first processor calculates a white point of a pixel of interest of image data from surrounding pixels of the pixel of interest, and executes adaptation processing using the calculated white point. A second processor executes adaptation processing using a fixed white point of image data. A selector selects an area of input image data. A color converter executes color conversion of the input image data using the first or second processor corresponding to the selected area.

Abstract: A plurality of image data obtained by divided-capturing an object and correction image data obtained by capturing a correction chart at an angle of view wider than that in the divided capturing are input. Heterogeneity of luminance in the plurality of image data is corrected based on the correction image data. Joined image data representing the entire image of the object is generated by joining the plurality of image data in which the heterogeneity of luminance has been corrected.

Abstract: A carbon fiber-reinforced resin composition including (A) a polyolefin resin, (B) an acid-modified polyolefin resin and (C) modified carbon fibers of which the adhesion amount of an amino group-containing modified polylolefin resin is 0.2 to 5.0 mass %, wherein the mass ratio of (A):(B) is 0 to 99.5:100 to 0.5 and the mass ratio [(A)+(B)]:(C) is 40 to 97:60 to 3.

Abstract: A method for manufacturing trichlorosilane in which hydrogen chloride and polymers including high-boiling chlorosilanes generated in a polycrystalline silicon manufacture process, a trichlorosilane manufacture process, or a conversion process are introduced into a decomposition furnace and are decomposition reacted at a high temperature, the method including: heating the decomposition furnace and a fin provided in the decomposition furnace; supplying the polymers and the hydrogen chloride to the decomposition furnace from an upper portion thereof so as to react the polymers and the hydrogen chloride by leading to an inner-bottom portion of the decomposition furnace while heating and stirring; and discharging a reacted gas from the inner-bottom portion upwardly above the decomposition furnace through a center of the decomposition furnace.

Abstract: The present invention relates to a carbon fiber bundle to which an amino group-containing modified polyolefin resin has applied, wherein the amount of applying amino group-containing modified polyolefin resin is 0.2 to 5.0% by mass. This carbon fiber bundle can be produced by applying 0.2 to 5.0% by mass of the amino group-containing modified polyolefin resin to the surface of the carbon fiber bundle. The present invention can exhibit excellent interface adhesion to a polyolefin resin, particularly to a polypropylene resin, and can provide a carbon fiber bundle useful for reinforcing the polyolefin resin and a method of producing the same.

Abstract: An apparatus for producing tichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.

Abstract: The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from ?10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.

Abstract: An apparatus 1 for manufacturing trichlorosilane includes a decomposition furnace 2 into which polymers and hydrogen chloride are introduced, the decomposition furnace 2 includes: a heating device 11 which heats an interior of the decomposition furnace 2; a reaction chamber 4 which is formed in the decomposition furnace; a center tube 3 which is inserted in the reaction chamber 4 along a longitudinal direction of the reaction chamber and has a lower-end opening portion 3a; raw-material-supply pipes 5 and 6 which supplies the polymer and the hydrogen chloride to the reaction chamber 4 at an exterior of the center tube 3; and a gas-discharge pipe 7 which leads out reacted gas from the center tube 3, the apparatus 1 further includes a fin 14 that leads the polymer and the hydrogen chloride to the lower-end opening portion 3a of the center tube 3 so as to stir the polymer and the hydrogen chloride.

Abstract: A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas.

Abstract: An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.