Patents by Inventor Toshiyuki Kawakami
Toshiyuki Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10998695Abstract: A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.Type: GrantFiled: December 31, 2018Date of Patent: May 4, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Toshiyuki Kawakami, Masayuki Ohta, Ryota Kawamura
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Publication number: 20200251884Abstract: A semiconductor laser element includes: a substrate; a first-conductivity-type semiconductor layer formed on the substrate; a light-emitting layer formed on the first-conductivity-type semiconductor layer; a second-conductivity-type semiconductor layer that is formed on the light-emitting layer and includes a protrusion in a strip form; a transparent conductive layer formed on the protrusion of the second-conductivity-type semiconductor layer; a protective layer that is formed on the transparent conductive layer and has conductivity; a dielectric film that covers side surfaces of the protrusion of the second-conductivity-type semiconductor layer, side surfaces of the transparent conductive layer, and side surfaces of the protective layer; and an upper electrode formed on the protective layer. The whole of an upper surface of the transparent conductive layer is covered by the protective layer, and part of an upper surface of the protective layer is covered by the dielectric film.Type: ApplicationFiled: February 5, 2020Publication date: August 6, 2020Inventors: RYOTA KAWAMURA, TOSHIYUKI KAWAKAMI
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Publication number: 20190221999Abstract: A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.Type: ApplicationFiled: December 31, 2018Publication date: July 18, 2019Inventors: TOSHIYUKI KAWAKAMI, MASAYUKI OHTA, RYOTA KAWAMURA
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Patent number: 9614350Abstract: A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon.Type: GrantFiled: August 27, 2014Date of Patent: April 4, 2017Assignee: SHARP KABUSHIKI KAISHAInventors: Kentaroh Tani, Toshiyuki Kawakami, Akira Ariyoshi
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Publication number: 20160322780Abstract: A semiconductor laser element is provided with: a substrate formed of a semiconductor; a semiconductor laminated film, which is laminated on the substrate, and which includes an active layer; a first electrode and a second electrode, which are provided on surfaces parallel to the active layer on the side where the semiconductor laminated film is formed on the substrate; and a facet protection film that is provided on both the facets, which are perpendicular to the active layer, and which face each other. In the semiconductor laser element, the facet is used as a fixing surface for the semiconductor laser element, said facet having the facet protection film formed thereon.Type: ApplicationFiled: August 27, 2014Publication date: November 3, 2016Applicant: Sharp Kabushiki KaishaInventors: Kentaroh TANI, Toshiyuki KAWAKAMI, Akira ARIYOSHI
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Publication number: 20160300592Abstract: In a semiconductor laser device including a semiconductor laser element that emits laser light from an emission region thereof, a cap having a peripheral wall and a ceiling wall that cover the semiconductor laser element and having a window portion formed in the ceiling wall to face the emission region, and a transparent optical member that fills the window portion, the optical member is formed by curing a liquid resin and holds the ceiling wall, and a light incidence surface of the optical member faces the emission region and is formed by natural flow of the liquid resin.Type: ApplicationFiled: September 2, 2014Publication date: October 13, 2016Applicant: SHARP KABUSHIKI KAISHAInventors: Toshiyuki KAWAKAMI, Akira ARIYOSHI
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Patent number: 8861561Abstract: Provided is a semiconductor laser chip improved more in heat dissipation performance. This semiconductor laser chip includes a substrate, which has a front surface and a rear surface, nitride semiconductor layers, which are formed on the front surface of the substrate, an optical waveguide (ridge portion), which is formed in the nitride semiconductor layers, an n-side electrode, which is formed on the rear surface of the substrate, and notched portions, which are formed in regions that include the substrate to run along the optical waveguide (ridge portion). The notched portions have notched surfaces on which a metal layer connected to the n-side electrode is formed.Type: GrantFiled: December 2, 2010Date of Patent: October 14, 2014Assignee: Sharp Kabushiki KaishaInventors: Toshiyuki Kawakami, Akira Ariyoshi
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Patent number: 8824516Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.Type: GrantFiled: September 6, 2013Date of Patent: September 2, 2014Assignee: Sharp Kabushiki KaishaInventors: Toshiyuki Kawakami, Tomoki Ono, Shigetoshi Ito, Susumu Omi
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Patent number: 8737443Abstract: A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.Type: GrantFiled: September 28, 2012Date of Patent: May 27, 2014Assignee: Sharp Kabushiki KaishaInventors: Kentaro Tani, Yoshihiko Tani, Toshiyuki Kawakami
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Publication number: 20140010252Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.Type: ApplicationFiled: September 6, 2013Publication date: January 9, 2014Applicant: SHARP KABUSHIKI KAISHAInventors: Toshiyuki KAWAKAMI, Tomoki ONO, Shigetoshi ITO, Susumu OMI
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Patent number: 8548019Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.Type: GrantFiled: April 3, 2012Date of Patent: October 1, 2013Assignee: Sharp Kabushiki KaishaInventors: Toshiyuki Kawakami, Tomoki Ono, Shigetoshi Ito, Susumu Omi
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Patent number: 8379682Abstract: A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 ?m or more but 6 ?m or less.Type: GrantFiled: June 23, 2011Date of Patent: February 19, 2013Assignee: Sharp Kabushiki KaishaInventors: Kentaro Tani, Toshiyuki Kawakami, Yoshihiko Tani
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Publication number: 20130038938Abstract: An optical component emits or transmits laser light of a wavelength of 460 nm or less, and a first coating formed from a dielectric film is applied upon at least a part of the surface thereof, and a second coating B formed from a dielectric film containing a noble metal or platinum group element is applied upon the first coating.Type: ApplicationFiled: July 13, 2012Publication date: February 14, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Toshiyuki Kawakami, Takeshi Kamikawa
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Publication number: 20130022071Abstract: A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.Type: ApplicationFiled: September 28, 2012Publication date: January 24, 2013Inventors: Kentaro Tani, Yoshihiko Tani, Toshiyuki Kawakami
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Patent number: 8358675Abstract: Provided is a nitride semiconductor laser device that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.Type: GrantFiled: June 25, 2010Date of Patent: January 22, 2013Assignee: Sharp Kabushiki KaishaInventors: Kentaro Tani, Yoshihiko Tani, Toshiyuki Kawakami
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Publication number: 20120230357Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.Type: ApplicationFiled: April 3, 2012Publication date: September 13, 2012Applicant: SHARP KABUSHIKI KAISHAInventors: Toshiyuki KAWAKAMI, Tomoki ONO, Shigetoshi ITO, Susumu OMI
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Patent number: 8170076Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.Type: GrantFiled: December 30, 2010Date of Patent: May 1, 2012Assignee: Sharp Kabushiki KaishaInventors: Toshiyuki Kawakami, Tomoki Ono, Shigetoshi Ito
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Publication number: 20110317733Abstract: A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 ?m or more but 6 ?m or less.Type: ApplicationFiled: June 23, 2011Publication date: December 29, 2011Applicant: Sharp Kabushiki KaishaInventors: Kentaro Tani, Toshiyuki Kawakami, Yoshihiko Tani
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Patent number: 7995632Abstract: In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.Type: GrantFiled: May 30, 2008Date of Patent: August 9, 2011Assignee: Sharp Kabushiki KaishaInventors: Fumio Yamashita, Shigetoshi Ito, Shuichiro Yamamoto, Toshiyuki Kawakami
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Publication number: 20110150022Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.Type: ApplicationFiled: December 30, 2010Publication date: June 23, 2011Applicant: SHARP KABUSHIKI KAISHAInventors: Toshiyuki KAWAKAMI, Tomoki Ono, Shigetoshi Ito