Patents by Inventor Toshiyuki Kawakami

Toshiyuki Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor light emitting device having electrode electrically separated into at least two regions
    Publication number: 20040099870
    Abstract: A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.
    Type: Application
    Filed: November 20, 2003
    Publication date: May 27, 2004
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Tomoki Ono, Shigetoshi Ito, Toshiyuki Okumura, Hirokazu Mouri, Kyoko Matsuda, Toshiyuki Kawakami, Takeshi Kamikama, Yoshihiko Tani
  • Nitride semiconductor device and fabrication method thereof
    Patent number: 6737678
    Abstract: In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the <1-100>direction of the wafer, and are formed in the shape of broken lines in the <11-20>direction of the wafer.
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: May 18, 2004
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Toshiyuki Kawakami, Yukio Yamasaki, Shigetoshi Ito, Susumu Omi
  • Nitride semiconductor device and fabrication method thereof
    Publication number: 20030030053
    Abstract: In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the <1-100>direction of the wafer, and are formed in the shape of broken lines in the <11-20>direction of the wafer.
    Type: Application
    Filed: July 3, 2002
    Publication date: February 13, 2003
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Toshiyuki Kawakami, Yukio Yamasaki, Shigetoshi Ito, Susumu Omi
  • Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
    Publication number: 20020141468
    Abstract: In connection with a nitride semiconductor laser device optimal for example for optical pickup and an optical information reproduction apparatus having superior condensation characteristics, the semiconductor laser device includes a substrate of nitride semiconductor, a lower clad layer of nitride semiconductor stacked thereon, an active layer stacked thereon, an upper clad layer of nitride semiconductor stacked thereon, and a contact layer of AlaInbGa1−a−bN stacked thereon having a lattice constant larger than the substrate of nitride semiconductor, and the device is cleaved and thus divided to have a surface serving as a resonator mirror.
    Type: Application
    Filed: March 22, 2002
    Publication date: October 3, 2002
    Inventors: Shigetoshi Ito, Yukio Yamasaki, Toshiyuki Kawakami