Abstract: Summary Novel bicycloester derivatives and pharmaceutically acceptable salts thereof have high DPP-IV inhibitory activity. Solving Means The novel bicycloester derivatives are represented by the general formula (1): Pharmaceutically acceptable salts thereof are also included (Example: (2S,4S)-1-[[(N-(4-ethoxycarbonylbicyclo[2.2.2]oct-1-yl)amino]acetyl]-4-fluoropyrrolidine-2-carbonitrile)).

Abstract: A cleaning device includes a cleaning roller, a supporting portion and a guiding portion. The cleaning roller has a core and a cleaning member provided around the core, the cleaning member contacting and cleaning a charging roller by rotation of the cleaning roller, the charging roller charging an image carrier carrying an image. The supporting portion supports the core rotatably in a state in which the cleaning member is in contact with the charging roller. The guiding portion movably guides the core, which is supported by the supporting portion, in a direction different from a direction of a straight line passing through a rotational center of the charging roller and a rotational center of the cleaning roller.

Abstract: An image carrier unit that is removably loaded into a main body of an image forming apparatus includes: an image carrier on which an image is formed; a charge roll that charges the image carrier; a biasing member that causes the charge roll to be pressed against the image carrier; and a separation cover provided with a cover portion that covers the charge roll by a latching portion thereof being caused to latch into a body frame of the image carrier unit and the cover portion being rotated toward the charge roll, and a hook portion disposed on the cover portion, that is inserted between the charge roll and the image carrier and is hooked onto the charge roll when the cover portion is rotated toward the charge roll so as to cause the charge roll to separate from the image carrier.

Abstract: A collected developer conveying device includes: a conveying passage through which collected developer is conveyed; a conveying member that is disposed in the conveying passage, and conveys the developer in the conveying passage by rotation thereof; a developer carrying body that holds developer on a surface thereof, and that is relatable; and a ventilation passage through which air passes from a developing container including the developer carrying body, wherein the conveying passage includes an air flow region formed in a part thereof upper than a rotational center of the conveying member in a gravitational direction, in a side of the conveying passage in which the conveying member rotates from an upper part of the conveying passage to a lower part thereof in the gravitational direction.

Abstract: A protection cover includes a cover base that covers and protects an external exposure portion of a photosensitive member and that comes into contact with an image forming apparatus housing body to movably guide a process cartridge; an extrusion member that is disposed in the cover base on a side opposite to an insertion direction of the process cartridge to the image forming apparatus housing body and that moves in the insertion direction of the process cartridge to extrude the process cartridge from the cover base; and a restriction portion that is disposed in the extrusion member to restrict the process cartridge in the cover base in a state where the process cartridge is located in the cover base and to release the process cartridge from the cover base in a state where the process cartridge is inserted and mounted to the image forming apparatus housing body.

Abstract: Novel bicycloester derivatives and pharmaceutically acceptable salts thereof have high DPP-IV inhibitory activity. SOLVING MEANS The novel bicycloester derivatives are represented by the general formula (1): Pharmaceutically acceptable salts thereof are also included (Example: (2S,4S)-1-[[N-(4-ethoxycarbonylbicyclo[2.2.2]oct-1-yl)amino]acetyl]-4-fluoropyrrolidine-2-carbonitrile)).

Abstract: An image forming apparatus includes: an image holder; an exposure member that has an exposure portion exposing the image holder; a first positioning unit that determines a distance in a first direction, which is a direction of an optical axis of the exposure member, between the exposure member and the image holder; and a second positioning unit that determines a position of the exposure member with respect to the image holder in a second direction being a direction of an axis line of the image holder, and a position of the exposure member with respect to the image holder in a third direction being perpendicular to both the first direction and the second direction, and that determines the distance between the exposure member and the image holder at a position substantially closer to the exposure member than the position of the first positioning unit.

Abstract: A cleaning device is disclosed which includes a cleaning member to clean the surface of a charging roll that charges an image carrier. The cleaning member is fixed at one end thereof and contacts at a free end side surface with the surface of the charging roll. The free end of the cleaning member is inserted in between the image carrier and the charging roll. Also disclosed is an image forming apparatus including the cleaning device.

Abstract: A cleaning device includes a cleaning roller, a supporting portion and a guiding portion. The cleaning roller has a core and a cleaning member provided around the core, the cleaning member contacting and cleaning a charging roller by rotation of the cleaning roller, the charging roller charging an image carrier carrying an image. The supporting portion supports the core rotatably in a state in which the cleaning member is in contact with the charging roller. The guiding portion movably guides the core, which is supported by the supporting portion, in a direction different from a direction of a straight line passing through a rotational center of the charging roller and a rotational center of the cleaning roller.

Abstract: A semiconductor device has an n?-semiconductor layer and p+-diffusion regions each having a depth of 14 to 20 ?m (design value) selectively formed in the n? semiconductor layer. With the entire surface of the chip irradiated with light ions, such as He ions, a lifetime killer is introduced from a position d2 shallower than a position d1 of a p-n junction surface, formed from the n?-semiconductor layer and the p+-diffusion regions, to a position d3 deeper than the position d1 to form a short-lifetime region over the entire chip. The irradiation is carried out so that the light ion irradiation half width is not more than the depth of the p+-diffusion regions and a position of a peak of the light ions becomes deeper than the light ion irradiation half width and within the range between 80% and 120% of the depth of the p+-diffusion regions.

Abstract: An image carrier unit that is removably loaded into a main body of an image forming apparatus includes: an image carrier on which an image is formed; a charge roll that charges the image carrier; a biasing member that causes the charge roll to be pressed against the image carrier; and a separation cover provided with a cover portion that covers the charge roll by a latching portion thereof being caused to latch into a body frame of the image carrier unit and the cover portion being rotated toward the charge roll, and a hook portion disposed on the cover portion, that is inserted between the charge roll and the image carrier and is hooked onto the charge roll when the cover portion is rotated toward the charge roll so as to cause the charge roll to separate from the image carrier.

Abstract: A cleaning device removes a toner attached to an image carrier of an electrophotographic-type image forming apparatus. The cleaning device includes a cleaning blade, a housing and a block member. The cleaning blade is in contact with a surface of the image carrier to removes the toner. The housing stores the toner removed by the cleaning blade. The block member causes the toner to temporarily remain the toner in a vicinity of a distal end of the cleaning blade. The block member is formed of a sheet-shaped elastic member. One side of the block member is fixed to the housing. A repulsive force against bending in an end portion of the block member in a longitudinal direction is substantially smaller than a repulsive force against bending in a center portion of the block member.

Abstract: A semiconductor device has an n?-semiconductor layer and p+-diffusion regions each having a depth of 14 to 20 ?m (design value) selectively formed in the n? semiconductor layer. With the entire surface of the chip irradiated with light ions, such as He ions, a lifetime killer is introduced from a position d2 shallower than a position d1 of a p-n junction surface, formed from the n?-semiconductor layer and the p+-diffusion regions, to a position d3 deeper than the position d1 to form a short-lifetime region over the entire chip. The irradiation is carried out so that the light ion irradiation half width is not more than the depth of the p+-diffusion regions and a position of a peak of the light ions becomes deeper than the light ion irradiation half width and within the range between 80% and 120% of the depth of the p+-diffusion regions.

Abstract: An N-type semiconductor layer with a low impurity concentration is grown by epitaxial growth on top of an N-type semiconductor substrate. An oxide film, with a desired pattern, is formed on the surface of the semiconductor layer. Using the oxide film as a mask, an active region edge and a guard ring region are formed by ion injection. After formation, the portion that forms the active region is exposed, and a paste containing platinum is coated onto the back surface of semiconductor substrate. The platinum is heat diffused into the substrate. Through this process, a region near the surface of the active region of semiconductor layer reverses to a P-type, and a shallow reverse region is formed, thereby producing a fast diode with adequate soft recovery characteristics.

Abstract: An -type semiconductor layer with a low impurity concentration is grown by epitaxial growth on top of an -type semiconductor substrate. An oxide film, with a desired pattern, is formed on the surface of the semiconductor layer. Using the oxide film as a mask, an active region edge and a guard ring region are formed by ion injection. After formation, the portion that forms the active region is exposed, and a paste containing platinum is coated onto the back surface of semiconductor substrate. The platinum is heat diffused into the substrate. Through this process, a region near the surface of the active region of semiconductor layer reverses to a P-type, and a shallow reverse region is formed, thereby producing a fast diode with adequate soft recovery characteristics.

Abstract: A superconducting transistor having a source region and a drain region are formed by a YBCO film on a barrier layer, which is composed of a PBCO film formed on an STO substrate. A gate electrode is disposed on the thinner wall at the back of the STO substrate. In a superconducting transistor so constructed the electric field created by the gate voltage works effectively at an interface with the barrier layer, more carriers can be drawn out relative to the applied gate voltage, and it becomes possible for a large superconduction current to flow.

Abstract: A superconducting transistor with superior withstand voltage having source region and a drain region formed of oxide superconductors 3, a PrBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 or an ScBa.sub.2 Cu.sub.3 O.sub.7-x layer 2 forming an intermediate region sandwiched by the source and drain regions. The regions are disposed on a substrate 1. An insulation layer 4 is disposed on the intermediate region. A transistor uses the intermediate region as an insulator when the gate is turned off, and as a superconductor when the gate is turned on.

Abstract: A signal control apparatus includes a circuit (26) for bearing a first characteristic to an original signal and outputting it as a first signal; a circuit (28) for bearing a second characteristic to the original signal and outputting it as a second signal; an adder circuit (30; 50) for adding the first and second signal with a variable proportion therebetween; and a control circuit (38) for controlling the variable proportion in accordance with the original signal in order to vary the output signal characteristic continuously.