Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: A CMOS device includes a substrate. A thin silicon film is disposed on the substrate and has a P-type thin film transistor and an N-type thin film transistor formed on the thin silicon film. The P-type thin film transistor and the N-type thin film transistor are coupled together in a CMOS configuration.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: In the matrix, a positive type liquid crystal of the twisted nematic type is driven by a thin film transistor arranged on a transparent substrate. The polarity of the video signal, originally generated for a cathode ray tube, is inverted within a driving circuit and the inverted negative video signal is used to drive the positive type liquid crystal display. In the range of voltages of the video signal which correspond to the white level, the active matrix panel is driven by stretching the voltage of the video signal such that comparable voltage-contrast characteristics are achieved with the liquid crystal display as with the cathode ray tube. Leakage current of the thin film transistor during off-periods is reduced by setting a gate voltage during the off-period which is within the range of voltage level of the power source.

Abstract: In the matrix, a positive type liquid crystal of the twisted nematic type is driven by a thin film transistor arranged on a transparent substrate. The polarity of the video signal, originally generated for a cathode ray tube, is inverted within a driving circuit and the inverted negative video signal is used to drive the positive type liquid crystal display. In the range of voltages of the video signal which correspond to the white level, the active matrix panel is driven by stretching the voltage of the video signal such that comparable voltage-contrast characteristics are achieved with the liquid crystal display as with the cathode ray tube. Leakage current of the thin film transistor during off-periods is reduced by setting a gate voltage during the off-period which is within the range of voltage level of the power source.

Abstract: The voltage regulator, entirely of monolithic integrated circuit construction, has an output voltage with a temperature gradient similar to that of the saturation and threshold voltages of liquid crystal elements. Constant current flows through temperature sensitive resistive elements in series with temperature insensitive resistance elements. The output voltage taken across at least a portion of the resistance elements has a voltage/temperature characteristic similar to that of the temperature sensitive elements. Both the level of the output voltage and the temperature gradient of the output voltage are independently controllable and independent of source voltage variations. Buffer circuits may be used between the output of the regulator and load, and sampling techniques are also used to conserve energy by duty cycle operation of higher current circuit elements.

Abstract: A circuit for compensation of timekeeping inaccuracies induced by ambient temperature variations. A bridge circuit having a temperature sensitive resistive element in one branch and a resistance of programmed variation in the other branch outputs a changing unbalanced voltage to drive a comparator. A change in polarity of the comparator output detects the ambient temperature and causes a counter controlling the programmed resistance to output signals to a timekeeping regulation circuit whereby timekeeping is made accurate. Initial corrections are made in the programmed resistance branch to adjust for off-design performance of the vibrator in the timepiece oscillator.