Abstract: To provide a semiconductor device including an oxide semiconductor in which a change in electrical characteristics is suppressed or whose reliability is improved. In a semiconductor device including an oxide semiconductor film in which a channel formation region is formed, an insulating film which suppresses entry of water and contains at least nitrogen and an insulating film which suppresses entry of nitrogen released form the insulating film are provided over the oxide semiconductor film. As water entering the oxide semiconductor film, water contained in the air, water in a film provided over the insulating film which suppresses entry of water, or the like can be given. Further, as the insulating film which suppresses entry of water, a nitride insulating film can be used, and the amount of hydrogen molecules released by heating from the nitride insulating film is smaller than 5.0×1021 molecules/cm3.

Abstract: In an optical fiber drawing device of the present invention, as an operational parameters corresponding to the real drawing speed in the duration from the moment of starting the operation of the optical fiber drawing device till the moment of reaching the target drawing speed are extracted from operational parameters stored in a operational parameter storage unit and applied to the optical fiber drawing device. The operational parameters include a base preform feeding speed, a target variation of real drawing speed, a gain multiplied by the speed element related with the variation of the real drawing speed, an operation cycle, a drawing furnace temperature, a coating resin pressure to coat the optical fiber, and flow of cooling gaseous helium, etc.

Abstract: A light-emitting device that is less influenced by variations in threshold voltage of a transistor is provided. Further, a light-emitting device in which variations in luminance due to variations in threshold voltage of a transistor can be reduced is provided. Further, influences due to variations in threshold voltage of a transistor are corrected in a short time. A light-emitting element, a transistor functioning as a switch supplying current to the light-emitting element, and a circuit in which threshold voltage of the transistor is obtained and voltage between a gate and a source (gate voltage) of the transistor is corrected in accordance with the obtained threshold voltage are included. An n-channel transistor in which threshold voltage changes in a positive direction and the amount of the change is small is used. When the threshold voltage of the transistor is obtained, the gate voltage of the transistor is adjusted as appropriate.

Abstract: To provide a pulse signal output circuit and a shift register which have lower power consumption, are not easily changed over time, and have a longer lifetime. A pulse signal output circuit includes a first input signal generation circuit; a second input signal generation circuit; an output circuit which includes a first transistor and a second transistor and outputs a pulse signal in response to a signal output from the first and second input signal generation circuits; a monitor circuit which obtains the threshold voltages of the first and second transistors; and a power supply output circuit which generates a power supply potential raised by a potential higher than or equal to a potential which is equal to or substantially equal to the threshold voltage and supplies the power supply potential to the first and second input signal generation circuits. A shift register includes the pulse signal output circuit.

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a first gate insulating layer over the gate electrode layer, a second gate insulating layer being over the first gate insulating layer and having a smaller thickness than the first gate insulating layer, an oxide semiconductor layer over the second gate insulating layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The first gate insulating layer contains nitrogen and has a spin density of 1×1017 spins/cm3 or less corresponding to a signal that appears at a g-factor of 2.003 in electron spin resonance spectroscopy. The second gate insulating layer contains nitrogen and has a lower hydrogen concentration than the first gate insulating layer.

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

Abstract: Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g/cm3 and lower than or equal to 2.63 g/cm3 and whose spin density of a signal with a g value of 2.001 is 2×1015 spins/cm3 or less in electron spin resonance.

Abstract: An object of one embodiment of the present invention is to provide an antifuse which has low writing voltage. The antifuse is used for a memory element for a read only memory device. The antifuse includes a first conductive layer, an insulating layer, a semiconductor layer, and a second conductive layer. The insulating layer included in the antifuse is a silicon oxynitride layer formed by adding ammonia to a source gas. When hydrogen is contained in the layer at greater than or equal to 1.2×1021 atoms/cm3 and less than or equal to 3.4×1021 atoms/cm3 or nitrogen is contained in the layer at greater than or equal to 3.2×1020 atoms/cm3 and less than or equal to 2.2×1021 atoms/cm3, writing can be performed at low voltage.

Abstract: A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.

Abstract: To output sounds generated by multiple objects disposed in a virtual space in as easy a manner as possible while giving live feelings, a storage unit (202) of a game machine (201) stores information on objects of a first type and a second type which move in the virtual space. A basic sound acquiring unit (203) acquires basic sound information corresponding to the total number of the objects. An imitation sound acquiring unit (204) acquires imitation sound information imitating a sound generated by an object of the first type from its position in the virtual space. A mixing output unit (205) mixes and outputs the basic sound information and the imitation sound information. An input receiving unit (206) receives an instruction input from the user.

Abstract: An object of one embodiment of the present invention is to provide an antifuse which has low writing voltage. The antifuse is used for a memory element for a read only memory device. The antifuse includes a first conductive layer, an insulating layer, a semiconductor layer, and a second conductive layer. The insulating layer included in the antifuse is a silicon oxynitride layer formed by adding ammonia to a source gas. When hydrogen is contained in the layer at greater than or equal to 1.2×1021 atoms/cm3 and less than or equal to 3.4×1021 atoms/cm3 or nitrogen is contained in the layer at greater than or equal to 3.2×1020 atoms/cm3 and less than or equal to 2.2×1021 atoms/cm3, writing can be performed at low voltage.

Abstract: In an ion generator, a high-voltage electrode with a contact portion is disposed on a first main surface of an insulating substrate and is connected to a wire electrode, and a ground electrode covered with an insulating film is disposed on a second main surface of the insulating substrate. The ground electrode is electrically connected to a contact portion on the first main surface via a through hole. By disposing the high-voltage electrode and the ground electrode on different surfaces, the occurrence of an undesirable leakage current flowing from the high-voltage electrode to the ground electrode is prevented.

Abstract: An operation assist apparatus includes a display device installed in an operator's cab of a construction machine, at which at least operating procedures for the construction machine are displayed with text and illustrations; an image processing device that generates images; and a control device that engages the image processing device to generate an image of an operating procedure corresponding to an operation of the construction machine and engages the display device to display the image generated by the image processing device.

Abstract: In an ion generator, a high-voltage electrode with a contact portion is disposed on a first main surface of an insulating substrate and is connected to a wire electrode, and a ground electrode covered with an insulating film is disposed on a second main surface of the insulating substrate. The ground electrode is electrically connected to a contact portion on the first main surface via a through hole. By disposing the high-voltage electrode and the ground electrode on different surfaces, the occurrence of an undesirable leakage current flowing from the high-voltage electrode to the ground electrode is prevented.

Abstract: An optical module is connected to external optical equipment with low loss, and excess length portion of a pigtail fiber does not cause an obstruction. The optical fiber module includes (1) a functional optical fiber; (2) a receptacle configured and arranged to accommodate the functional optical fiber; (3) a pigtail fiber that is connected to the functional optical fiber, and disposed so as to be extendable or retractable from the receptacle; and (4) a connecting terminal that is connected to the pigtail fiber, and to which external equipment is connected.

Abstract: The present invention relates to a practical optical amplification module and the like realizing a wide-band gain spectrum with a small relative gain non-uniformity in L band. Pumping light from a pumping light source is supplied to a Bi type EDF by way of an optical coupler. Multiplexed signal light of L band inputted by way of an input end reaches the Bi type EDF by way of an optical coupler, an optical isolator, and an optical coupler, and is collectively amplified in the Bi type EDF. The multiplexed signal light amplified in the Bi type EDF is outputted from an output end by way of an optical coupler, an optical isolator, and an optical coupler.

Abstract: This invention provides an optical transmission system which allows to perform high-quality transmission of each of a plurality of signal channels multiplexed. In the optical transmission system, signal light in which a plurality of signal channels with an optical frequency spacing of 400 GHz or more but 12.5 THz or less is transmitted from an optical transmitter to a Raman amplifier through an optical fiber transmission line. In the Raman amplifier, pumping light from a pumping light source unit is supplied to an optical fiber through an optical coupler. The multiplexed signal light inputted to the Raman amplifier arrives at the optical fiber through an optical isolator and optical coupler, and Raman-amplified by the optical fiber. The Raman-amplified multiplexed signal light is outputted from the Raman amplifier through an optical coupler and optical isolator.

Abstract: In an optical fiber drawing device of the present invention, as an operational parameters corresponding to the real drawing speed in the duration from the moment of starting the operation of the optical fiber drawing device till the moment of reaching the target drawing speed are extracted from operational parameters stored in a operational parameter storage unit and applied to the optical fiber drawing device. The operational parameters include a base preform feeding speed, a target variation of real drawing speed, a gain multiplied by the speed element related with the variation of the real drawing speed, an operation cycle, a drawing furnace temperature, a coating resin pressure to coat the optical fiber, and flow of cooling gaseous helium, etc.

Abstract: To output sounds generated by multiple objects disposed in a virtual space in as easy a manner as possible while giving live feelings, a storage unit (202) of a game machine (201) stores information on objects of a first type and a second type which move in the virtual space. A basic sound acquiring unit (203) acquires basic sound information corresponding to the total number of the objects. An imitation sound acquiring unit (204) acquires imitation sound information imitating a sound generated by an object of the first type from its position in the virtual space. A mixing output unit (205) mixes and outputs the basic sound information and the imitation sound information. An input receiving unit (206) receives an instruction input from the user.