Abstract: A semiconductor light-emitting element according to the present invention includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-electrode. The n-type semiconductor layer has a composition of AlGaN or AlInGaN. The active layer is formed on the n-type semiconductor layer. The active layer contains an AlGaN semiconductor or an AlInGaN semiconductor. The p-type semiconductor layer is formed on the active layer. The p-type semiconductor layer has a composition of AlN, AlGaN, or AlInGaN. The p-electrode is formed on the p-type semiconductor layer. The p-type semiconductor layer includes a contact layer formed on the p-electrode. The contact layer includes an AlGaN layer or an AlInGaN layer in which a band gap decreases toward an interface with the p-electrode. The contact layer includes a tunneling contact layer in contact with the p-electrode. The tunneling contact layer is connected to the p-electrode by a tunnel junction.

Abstract: A group III nitride semiconductor light-emitting element includes a single crystal substrate and an element layer. The element layer includes an n-type layer, an active layer, and a p-type layer formed on the upper surface of the single crystal substrate in this order, and has a composition represented by the composition formula AlXGaYIn1-X-YN (0?X?1.0, 0?Y?1.0, 0?X+Y?1.0). The thickness of the single crystal substrate is at least 80 ?m. The area of the upper surface of the substrate is larger than the area of the bottom surface of the substrate.

Abstract: A group-Ill nitride stacked body includes a substrate, an n-type first AlGaN layer expressed by the composition formula AlXGa1-XN (0<X?1), and a second AlGaN layer which is disposed between the substrate and the n-type first AlGaN layer and which is expressed by the composition formula AlYGa1-YN (0.5<Y?1, where Y<X). A group-III nitride light-emitting element comprises an active layer which is disposed on the n-type first AlGaN layer of the group-Ill nitride stacked body and which includes at least one well layer. The well layer of the active layer is an AlGaN layer expressed by the composition formula AlWGa1-WN (0<W<1), where the Al composition W is such that W?Y.

Abstract: A semiconductor wafer has, on one surface of a sapphire substrate, an element layer including an n-type layer, an active layer, and a p-type layer, and is characterized in that the surface of the element layer is bent in a convex way, and the curvature thereof is 530-800 km?1.

Abstract: Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5?X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5?X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5?X1<1) layer, a second n-type AlX2Ga1-X2N (0.5?X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5?X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1?X2|?0.1, and satisfy 0<|X2?X3|?0.1.

Abstract: A group III nitride semiconductor light-emitting element includes a single crystal substrate and an element layer. The element layer includes an n-type layer, an active layer, and a p-type layer formed on the upper surface of the single crystal substrate in this order, and has a composition represented by the composition formula AlXGaYIn1-X-YN (0?X?1.0, 0?Y?1.0, 0?X+Y?1.0). The thickness of the single crystal substrate is at least 80 ?m. The area of the upper surface of the substrate is larger than the area of the bottom surface of the substrate.

Abstract: A group-Ill nitride stacked body includes a substrate, an n-type first AlGaN layer expressed by the composition formula AlXGa1-XN (0<X?1), and a second AlGaN layer which is disposed between the substrate and the n-type first AlGaN layer and which is expressed by the composition formula AlYGa1-YN (0.5<Y?1, where Y<X). A group-III nitride light-emitting element comprises an active layer which is disposed on the n-type first AlGaN layer of the group-Ill nitride stacked body and which includes at least one well layer. The well layer of the active layer is an AlGaN layer expressed by the composition formula AlWGa1-WN (0<W<1), where the Al composition W is such that W?Y.

Abstract: Provided is a group III nitride stacked body having an n-type AlXGa1-XN (0.5?X<1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlXGa1-XN (0.5?X<1) layer has at least a stacked structure in which a first n-type AlX1Ga1-X1N (0.5?X1<1) layer, a second n-type AlX2Ga1-X2N (0.5?X2<1) layer, and a third n-type AlX3Ga1-X3N (0.5?X3<1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0<|X1?X2|?0.1, and satisfy 0<|X2?X3|?0.1.

Abstract: A group III nitride semiconductor element includes an active layer between an n-type layer and a p-type layer and has a mesa structure containing the p-type layer, and includes an n electrode on the n-type layer and a p electrode on the p-type layer. The p electrode is obtained by sequentially laminating a first metal layer, a conductive layer and a second metal layer in this order. The resistivity of the conductive layer is higher than the resistivity of the first metal layer.

Abstract: A group III nitride semiconductor light emitting element includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ? or more of a diffusion length Ls.

Abstract: An n-type electrode includes a first electrode layer to be formed on an n-type group III nitride single crystal layer and a second electrode layer formed on the first electrode layer and in which at least the first electrode layer contains nitrogen atoms and oxygen atoms and an atomic ratio of the oxygen atoms to the nitrogen atoms is 0.2 or more and 2.0 or less.

Abstract: A semiconductor wafer has, on one surface of a sapphire substrate, an element layer including an n-type layer, an active layer, and a p-type layer, and is characterized in that the surface of the element layer is bent in a convex way, and the curvature thereof is 530-800 km?1.

Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlXGa1-XN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlXGa1-XN layer (0<X?1).

Abstract: A group III nitride semiconductor element includes an active layer between an n-type layer and a p-type layer and has a mesa structure containing the p-type layer, and includes an n electrode on the n-type layer and a p electrode on the p-type layer. The p electrode is obtained by sequentially laminating a first metal layer, a conductive layer and a second metal layer in this order. The resistivity of the conductive layer is higher than the resistivity of the first metal layer.

Abstract: Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film. The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlAGaBInCN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

Abstract: A group III nitride semiconductor light emitting element comprising includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ? or more of a diffusion length Ls.

Abstract: A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlxGa1?xN layer (0<X?1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5×1010 cm?2 or a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlxGa1?xN layer (0<X?1).

Abstract: A nitride-based semiconductor light-emitting element includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type different from the first conductivity type; a carrier blocking layer of the second conductivity type, provided on a surface of the second semiconductor layer closer to the first semiconductor layer; and a light-emitting layer region having a light-emitting layer, provided between the first semiconductor layer and the carrier blocking layer. A predetermined specific region is provided in the carrier blocking layer and extending from an interface between the carrier blocking layer and the light-emitting layer region and wherein a maximum value of a concentration of an impurity of the second conductivity type in the predetermined specific region is higher than 5×1019 cm?3.

Abstract: Provided is a light-emitting element which is capable of improving the external quantum efficiency by controlling a dopant concentration of an interface between a light-emitting layer and another semiconductor layer. A nitride-based semiconductor light-emitting element includes: a first semiconductor layer 20 of a first conductivity type; a second semiconductor layer 50 of a second conductivity type; a carrier block layer 40 provided in the second semiconductor layer 50 on a side closer to the first semiconductor layer 20 and containing an impurity of the second conductivity type; a light-emitting layer 30 provided between the first semiconductor layer 20 and the carrier block layer 40; and a spacer layer 35 which is provided between the carrier block layer 40 and the light-emitting layer 30 and makes the concentration of the impurity of the second conductivity type in the vicinity of the interface with the light-emitting layer 30 be at a predetermined concentration or less.

Abstract: A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.