Abstract: A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.

Abstract: A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

Abstract: A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm?3 and a dislocation density of 106 cm?2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.

Abstract: Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film. The method includes heating the base substrate at a temperature range of 1000 to 1250° C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlAGaBInCN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

Abstract: A nitride semiconductor deep ultraviolet light emitting device having a superior light emission efficiency is provided. A nitride semiconductor light emitting device having emission wavelength of 200 to 300 nm includes an n-type layer consisting of a single layer or a plurality of layers having different band gaps, a p-type layer consisting of a single layer or a plurality of layers having different band gaps, an active layer arranged between the n-type layer and the p-type layer, and an electron blocking layer having a band gap larger than any band gap of layers composing the active layer and the p-type layer. The p-type layer includes a first p-type layer having a band gap larger than a band gap of a first n-type layer which has a smallest band gap in the n-type layer. The electron blocking layer is arranged between the active layer and the first p-type layer.

Abstract: A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

Abstract: A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

Abstract: The first refrigerating machine oil composition of the invention comprises a predetermined base oil, and at least one ester additive selected from esters of a monobasic fatty acid having 12 or more carbon atoms and a monohydric alcohol having 1-24 carbon atoms, and an ester of a chain-like dibasic acid and a monohydric alcohol. The second refrigerating machine oil composition of the invention comprises a predetermined base oil, and at least one oxygen-containing compound selected from the following (A1)-(A6). The third refrigerating machine oil composition of the invention comprises a predetermined base oil, and at least one oxygen-containing compound selected from the following (A1), (A2), (A4), (A7) and (A8).

Abstract: A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.

Abstract: A laser diode device with which a low voltage is realized is provided. The laser diode device includes: a substrate; a semiconductor laminated structure including a first conductive cladding layer, an active layer, and a second conductive cladding layer on one face side of the substrate and having a contact layer as the uppermost layer, in which a protrusion is formed in the contact layer and the second conductive cladding layer; and an electrode provided on the contact layer. The contact layer has a concavo-convex structure on a face on the electrode side, and the electrode is contacted with the contact layer at contact points of a top face, a side face, and a bottom face of the concavo-convex structure.

Abstract: Presence of free insulin receptor ?-subunit in blood was discovered. Furthermore, methods for measuring the insulin receptor ?-subunit was provided, the method comprising the steps of contacting the insulin receptor ?-subunit in a blood sample with an antibody recognizing the insulin receptor ?-subunit, and detecting the binding between the two. Measurement of the free insulin receptor ?-subunit in the blood is useful for evaluating risk factors for diabetes. In addition, the measurement methods of the present invention showed that concentrations of the free insulin receptor ?-subunit in the blood of diabetes or cancer patients are significantly high. Free insulin receptor ?-subunit in blood is useful as a marker for diabetes or cancer.

Abstract: A laser diode device with which a low voltage is realized is provided. The laser diode device includes: a substrate; a semiconductor laminated structure including a first conductive cladding layer, an active layer, and a second conductive cladding layer on one face side of the substrate and having a contact layer as the uppermost layer, in which a protrusion is formed in the contact layer and the second conductive cladding layer; and an electrode provided on the contact layer. The contact layer has a concavo-convex structure on a face on the electrode side, and the electrode is contacted with the contact layer at contact points of a top face, a side face, and a bottom face of the concavo-convex structure.

Abstract: Presence of free insulin receptor ?-subunit in blood was discovered. Furthermore, methods for measuring the insulin receptor ?-subunit was provided, the method comprising the steps of contacting the insulin receptor ?-subunit in a blood sample with an antibody recognizing the insulin receptor ?-subunit, and detecting the binding between the two. Measurement of the free insulin receptor ?-subunit in the blood is useful for evaluating risk factors for diabetes. In addition, the measurement methods of the present invention showed that concentrations of the free insulin receptor ?-subunit in the blood of diabetes or cancer patients are significantly high. Free insulin receptor ?-subunit in blood is useful as a marker for diabetes or cancer.

Abstract: A semiconductor laser including: a nitride III-V compound semiconductor substrate configured to have a first planar area, a second planar area, and a third planar area in a major surface, the first planar area being formed of a C-plane, the second planar area being continuous with the first planar area and being formed of a semipolar plane inclined to the first planar area, the third planar area being continuous with the second planar area and being formed of a C-plane parallel to the first planar area; a first cladding layer configured to be composed of a nitride III-V compound semiconductor on the major surface of the nitride III-V compound semiconductor substrate; an active layer configured to be composed of a nitride III-V compound semiconductor that exists on the first cladding layer and contains In; and a second cladding layer configured to be composed of a nitride III-V compound semiconductor on the active layer.

Abstract: The first refrigerating machine oil composition of the invention comprises a predetermined base oil, and at least one ester additive selected from esters of a monobasic fatty acid having 12 or more carbon atoms and a monohydric alcohol having 1-24 carbon atoms, and an ester of a chain-like dibasic acid and a monohydric alcohol. The second refrigerating machine oil composition of the invention comprises a predetermined base oil, and at least one oxygen-containing compound selected from the following (A1)-(A6). The third refrigerating machine oil composition of the invention comprises a predetermined base oil, and at least one oxygen-containing compound selected from the following (A1), (A2), (A4), (A7) and (A8).

Abstract: Presence of free insulin receptor ?-subunit in blood was discovered. Furthermore, methods for measuring the insulin receptor ?-subunit was provided, the method comprising the steps of contacting the insulin receptor ?-subunit in a blood sample with an antibody recognizing the insulin receptor ?-subunit, and detecting the binding between the two. Measurement of the free insulin receptor ?-subunit in the blood is useful for evaluating risk factors for diabetes. In addition, the measurement methods of the present invention showed that concentrations of the free insulin receptor ?-subunit in the blood of diabetes or cancer patients are significantly high. Free insulin receptor ?-subunit in blood is useful as a marker for diabetes or cancer.