Abstract: An acoustic system includes: a charging apparatus, and speakers that are chargeable with the charging apparatus. The speakers include: a speaker unit that generates a sound based on the first electrical signal, and a power reception coil that is configured to be disposed to have at least a part of it overlaps with the extension line of the central axis of a power transmission coil of the charging apparatus and generates electric power to be supplied to the speaker unit with a magnetic flux generated by a power transmission coil.

Abstract: In the present invention, a digital electroacoustic transducer apparatus with a noise canceling system includes: a signal processing circuit that generates a digital processing signal based on a digital signal from a sound source; a first voice coil that receives the digital processing signal; a microphone that picks up noise and generates a noise signal; a noise canceling circuit that generates a cancel signal based on the noise signal; and a second voice coil that receives the cancel signal, the first voice coil and the second voice coil driving a diaphragm, thereby avoiding a difference between the phase of the cancel signal and the phase opposite to that of noise.

Abstract: An acoustic system includes: a charging apparatus, and speakers that are chargeable with the charging apparatus. The speakers include: a speaker unit that generates a sound based on the first electrical signal, and a power reception coil that is configured to be disposed to have at least a part of it overlaps with the extension line of the central axis of a power transmission coil of the charging apparatus and generates electric power to be supplied to the speaker unit with a magnetic flux generated by a power transmission coil.

Abstract: A digital electroacoustic transducer apparatus according to the present invention includes: a signal processing circuit that generates a digital processing signal based on a digital signal from a sound source; a first drive unit that receives the digital processing signal; a sound pickup unit that picks up noise and generates a noise signal; a noise canceling circuit that generates a cancel signal based on the noise signal; and a second drive unit that receives the cancel signal, thereby reducing a difference between the phase of the cancel signal and the phase opposite to that of noise.

Abstract: In the present invention, a digital electroacoustic transducer apparatus with a noise canceling system includes: a signal processing circuit that generates a digital processing signal based on a digital signal from a sound source; a first voice coil that receives the digital processing signal; a microphone that picks up noise and generates a noise signal; a noise canceling circuit that generates a cancel signal based on the noise signal; and a second voice coil that receives the cancel signal, the first voice coil and the second voice coil driving a diaphragm, thereby avoiding a difference between the phase of the cancel signal and the phase opposite to that of noise.

Abstract: A semiconductor device includes a board having a solder resist layer with first and second openings on a first surface, and a first electrode on the first surface, a portion thereof exposed in the first opening and electrically connected to the board. A second electrode is located on the first surface having a portion exposed in the second opening and electrically connected to the board. A portion of the second electrode is covered by the solder resist layer. A first solder bump is on the first electrode and covers a side surface. A second solder bump is on the second electrode. A semiconductor chip has a first region and a second region facing the first surface. A third electrode is in the first region and electrically connected to the first solder bump. A fourth electrode is in the second region and electrically connected to the second solder bump.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: A semiconductor device includes a connector configured for connection to a host, a power circuit supplied with a first voltage from the host via the connector, the power circuit including first and second channels configured to generate second and third voltages, respectively, from the first voltage, a semiconductor memory supplied with the second voltage via the first channel, and a controller for the semiconductor memory, supplied with the third voltage via the second channel. When the first voltage is less than a first threshold, the power circuit turns off the first channel and the second channel.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: A semiconductor device includes a connector configured for connection to a host, a power circuit supplied with a first voltage from the host via the connector, the power circuit including first and second channels configured to generate second and third voltages, respectively, from the first voltage, a semiconductor memory supplied with the second voltage via the first channel, and a controller for the semiconductor memory, supplied with the third voltage via the second channel. When the first voltage is less than a first threshold, the power circuit turns off the first channel and the second channel.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to supply the first power to the output portion, the power supply circuit generating second power and third power from the first power, a semiconductor memory which receives the second power from the output portion, and a controller which receives the third power from the output portion and controls the semiconductor memory. The power supply circuit turns off the switch and stops supply of power to the semiconductor memory and the controller when the second power exceeds a first value or when the third power exceeds a second value.

Abstract: A semiconductor device includes a board having a solder resist layer with first and second openings on a first surface, and a first electrode on the first surface, a portion thereof exposed in the first opening and electrically connected to the board. A second electrode is located on the first surface having a portion exposed in the second opening and electrically connected to the board. A portion of the second electrode is covered by the solder resist layer. A first solder bump is on the first electrode and covers a side surface. A second solder bump is on the second electrode. A semiconductor chip has a first region and a second region facing the first surface. A third electrode is in the first region and electrically connected to the first solder bump. A fourth electrode is in the second region and electrically connected to the second solder bump.

Abstract: According to one embodiment, there is provided a memory system that is connected to a host apparatus. The memory system includes a transmitting port and a controller. The transmitting port transmits a transmission signal to the host apparatus. The controller includes a first output interface that is connected to the transmitting port and a second output interface that is connected to the transmitting port. The memory system is configured such that a drivability of an output from the first output interface is larger than a drivability of an output from the second output interface in a first mode.

Abstract: A semiconductor system includes a semiconductor package having first and second semiconductor chips and a controller configured to control the first and second semiconductor chips, and a power source chip that is connected to a control line of the semiconductor package, and is configured to supply to the first and second semiconductor chips and the controller, power having different voltage or current levels that correspond to a voltage level of the control line.

Abstract: A NAND DC-DC converter includes two output terminals. Each output terminal is connected to several multi-chip packages in each of which a plurality of NAND flash memory chips are provided. Phases of voltages which are output from the output terminals are different by 180 degrees.

Abstract: According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories.

Abstract: According to one embodiment, there is provided a memory system that is connected to a host apparatus. The memory system includes a transmitting port and a controller. The transmitting port transmits a transmission signal to the host apparatus. The controller includes a first output interface that is connected to the transmitting port and a second output interface that is connected to the transmitting port. The memory system is configured such that a drivability of an output from the first output interface is larger than a drivability of an output from the second output interface in a first mode.

Abstract: According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories.