Patents by Inventor Tran-Hui Shen
Tran-Hui Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11852966Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.Type: GrantFiled: June 7, 2021Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
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Publication number: 20230384662Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.Type: ApplicationFiled: July 30, 2023Publication date: November 30, 2023Inventors: FENG YUAN HSU, TRAN-HUI SHEN, CHING-HSIANG HSU
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Patent number: 11782338Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.Type: GrantFiled: April 15, 2022Date of Patent: October 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Feng Yuan Hsu, Tran-Hui Shen, Ching-Hsiang Hsu
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Publication number: 20230288813Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: ApplicationFiled: May 15, 2023Publication date: September 14, 2023Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
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Patent number: 11687006Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: GrantFiled: May 9, 2022Date of Patent: June 27, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Cheng Chen, Chia-Jen Chen, Hsin-Chang Lee, Shih-Ming Chang, Tran-Hui Shen, Yen-Cheng Ho, Chen-Shao Hsu
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Publication number: 20220260926Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: ApplicationFiled: May 9, 2022Publication date: August 18, 2022Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
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Publication number: 20220236637Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.Type: ApplicationFiled: April 15, 2022Publication date: July 28, 2022Inventors: FENG YUAN HSU, TRAN-HUI SHEN, CHING-HSIANG HSU
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Patent number: 11327405Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: GrantFiled: October 26, 2020Date of Patent: May 10, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Cheng Chen, Chia-Jen Chen, Hsin-Chang Lee, Shih-Ming Chang, Tran-Hui Shen, Yen-Cheng Ho, Chen-Shao Hsu
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Patent number: 11307489Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.Type: GrantFiled: August 15, 2019Date of Patent: April 19, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Feng Yuan Hsu, Tran-Hui Shen, Ching-Hsiang Hsu
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Publication number: 20210294203Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.Type: ApplicationFiled: June 7, 2021Publication date: September 23, 2021Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
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Patent number: 11029593Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.Type: GrantFiled: October 22, 2019Date of Patent: June 8, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
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Publication number: 20210055646Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: ApplicationFiled: October 26, 2020Publication date: February 25, 2021Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
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Patent number: 10866504Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.Type: GrantFiled: December 22, 2017Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
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Patent number: 10816892Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: GrantFiled: April 30, 2018Date of Patent: October 27, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chien-Cheng Chen, Chia-Jen Chen, Hsin-Chang Lee, Shih-Ming Chang, Tran-Hui Shen, Yen-CHeng Ho, Chen-Shao Hsu
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Patent number: 10678126Abstract: A mask for semiconductor manufacturing includes a mask substrate, a shifter layer over the mask substrate, a stop layer over and in contact with the shifter layer, and an absorber layer over the stop layer. The shifter layer includes each material of a set of materials, the materials being combined in a first proportion in the shifter layer. The stop layer includes each material of the set of materials, the materials being combined in a second proportion in the stop layer that is different from the first proportion.Type: GrantFiled: April 18, 2018Date of Patent: June 9, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Publication number: 20200073226Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.Type: ApplicationFiled: August 15, 2019Publication date: March 5, 2020Inventors: FENG YUAN HSU, TRAN-HUI SHEN, CHING-HSIANG HSU
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Publication number: 20200050098Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.Type: ApplicationFiled: October 22, 2019Publication date: February 13, 2020Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
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Publication number: 20190196322Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.Type: ApplicationFiled: December 22, 2017Publication date: June 27, 2019Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
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Publication number: 20190148110Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.Type: ApplicationFiled: April 30, 2018Publication date: May 16, 2019Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
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Patent number: 10156783Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.Type: GrantFiled: February 27, 2017Date of Patent: December 18, 2018Assignee: Taiwan Semiconductor Manufactuing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen