Patents by Inventor Tran-Hui Shen

Tran-Hui Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11029593
    Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
  • Publication number: 20210055646
    Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
    Type: Application
    Filed: October 26, 2020
    Publication date: February 25, 2021
    Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
  • Patent number: 10866504
    Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
  • Patent number: 10816892
    Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: October 27, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Cheng Chen, Chia-Jen Chen, Hsin-Chang Lee, Shih-Ming Chang, Tran-Hui Shen, Yen-CHeng Ho, Chen-Shao Hsu
  • Patent number: 10678126
    Abstract: A mask for semiconductor manufacturing includes a mask substrate, a shifter layer over the mask substrate, a stop layer over and in contact with the shifter layer, and an absorber layer over the stop layer. The shifter layer includes each material of a set of materials, the materials being combined in a first proportion in the shifter layer. The stop layer includes each material of the set of materials, the materials being combined in a second proportion in the stop layer that is different from the first proportion.
    Type: Grant
    Filed: April 18, 2018
    Date of Patent: June 9, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
  • Publication number: 20200073226
    Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The laser beam includes a pulse duration of less than about ten picoseconds.
    Type: Application
    Filed: August 15, 2019
    Publication date: March 5, 2020
    Inventors: FENG YUAN HSU, TRAN-HUI SHEN, CHING-HSIANG HSU
  • Publication number: 20200050098
    Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
    Type: Application
    Filed: October 22, 2019
    Publication date: February 13, 2020
    Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
  • Publication number: 20190196322
    Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.
    Type: Application
    Filed: December 22, 2017
    Publication date: June 27, 2019
    Inventors: Chin-Hsiang Lin, Chien-Cheng Chen, Hsin-Chang Lee, Chia-Jen Chen, Pei-Cheng Hsu, Yih-Chen Su, Gaston Lee, Tran-Hui Shen
  • Publication number: 20190148110
    Abstract: In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.
    Type: Application
    Filed: April 30, 2018
    Publication date: May 16, 2019
    Inventors: Chien-Cheng CHEN, Chia-Jen CHEN, Hsin-Chang LEE, Shih-Ming CHANG, Tran-Hui SHEN, Yen-Cheng HO, Chen-Shao HSU
  • Patent number: 10156783
    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufactuing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
  • Publication number: 20180240668
    Abstract: A mask for semiconductor manufacturing includes a mask substrate, a shifter layer over the mask substrate, a stop layer over and in contact with the shifter layer, and an absorber layer over the stop layer. The shifter layer includes each material of a set of materials, the materials being combined in a first proportion in the shifter layer. The stop layer includes each material of the set of materials, the materials being combined in a second proportion in the stop layer that is different from the first proportion.
    Type: Application
    Filed: April 18, 2018
    Publication date: August 23, 2018
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
  • Patent number: 9953833
    Abstract: Provided is a method for creating a mask blank that includes a capping layer and a shifter layer. The capping layer is optically compatible and process compatible with the shifter layer. The method may include providing a cleaned and polished mask substrate to a deposition tool and depositing, within the deposition tool, a shifter layer over a cleaned and polished mask substrate. The shifter layer may include each material of a set of materials in a first proportion. The method may also include depositing an additional layer over the shifter layer, the additional layer providing a capping layer over the shifter layer. The capping layer includes the materials in a second proportion unequal to the first proportion. The capping layer includes molybdenum, silicon, and nitride in a proportion that aids in detection by a residual gas analyzer. Also provided is also a mask blank structure incorporating the compatible capping layer.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: April 24, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
  • Publication number: 20170168387
    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.
    Type: Application
    Filed: February 27, 2017
    Publication date: June 15, 2017
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
  • Patent number: 9581894
    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: February 28, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
  • Publication number: 20160013058
    Abstract: Provided is a method for creating a mask blank that includes a capping layer and a shifter layer. The capping layer is optically compatible and process compatible with the shifter layer. The method may include providing a cleaned and polished mask substrate to a deposition tool and depositing, within the deposition tool, a shifter layer over a cleaned and polished mask substrate. The shifter layer may include each material of a set of materials in a first proportion. The method may also include depositing an additional layer over the shifter layer, the additional layer providing a capping layer over the shifter layer. The capping layer includes the materials in a second proportion unequal to the first proportion. The capping layer includes molybdenum, silicon, and nitride in a proportion that aids in detection by a residual gas analyzer. Also provided is also a mask blank structure incorporating the compatible capping layer.
    Type: Application
    Filed: September 17, 2015
    Publication date: January 14, 2016
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
  • Publication number: 20150370158
    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.
    Type: Application
    Filed: August 31, 2015
    Publication date: December 24, 2015
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
  • Patent number: 9142423
    Abstract: Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: September 22, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
  • Patent number: 9122175
    Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: September 1, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
  • Publication number: 20140199787
    Abstract: Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.
    Type: Application
    Filed: March 26, 2014
    Publication date: July 17, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
  • Patent number: 8715890
    Abstract: Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.
    Type: Grant
    Filed: January 31, 2012
    Date of Patent: May 6, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen