Patents by Inventor Tran-Hui Shen
Tran-Hui Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180240668Abstract: A mask for semiconductor manufacturing includes a mask substrate, a shifter layer over the mask substrate, a stop layer over and in contact with the shifter layer, and an absorber layer over the stop layer. The shifter layer includes each material of a set of materials, the materials being combined in a first proportion in the shifter layer. The stop layer includes each material of the set of materials, the materials being combined in a second proportion in the stop layer that is different from the first proportion.Type: ApplicationFiled: April 18, 2018Publication date: August 23, 2018Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Patent number: 9953833Abstract: Provided is a method for creating a mask blank that includes a capping layer and a shifter layer. The capping layer is optically compatible and process compatible with the shifter layer. The method may include providing a cleaned and polished mask substrate to a deposition tool and depositing, within the deposition tool, a shifter layer over a cleaned and polished mask substrate. The shifter layer may include each material of a set of materials in a first proportion. The method may also include depositing an additional layer over the shifter layer, the additional layer providing a capping layer over the shifter layer. The capping layer includes the materials in a second proportion unequal to the first proportion. The capping layer includes molybdenum, silicon, and nitride in a proportion that aids in detection by a residual gas analyzer. Also provided is also a mask blank structure incorporating the compatible capping layer.Type: GrantFiled: September 17, 2015Date of Patent: April 24, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Publication number: 20170168387Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.Type: ApplicationFiled: February 27, 2017Publication date: June 15, 2017Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
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Patent number: 9581894Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.Type: GrantFiled: August 31, 2015Date of Patent: February 28, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
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Publication number: 20160013058Abstract: Provided is a method for creating a mask blank that includes a capping layer and a shifter layer. The capping layer is optically compatible and process compatible with the shifter layer. The method may include providing a cleaned and polished mask substrate to a deposition tool and depositing, within the deposition tool, a shifter layer over a cleaned and polished mask substrate. The shifter layer may include each material of a set of materials in a first proportion. The method may also include depositing an additional layer over the shifter layer, the additional layer providing a capping layer over the shifter layer. The capping layer includes the materials in a second proportion unequal to the first proportion. The capping layer includes molybdenum, silicon, and nitride in a proportion that aids in detection by a residual gas analyzer. Also provided is also a mask blank structure incorporating the compatible capping layer.Type: ApplicationFiled: September 17, 2015Publication date: January 14, 2016Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Publication number: 20150370158Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.Type: ApplicationFiled: August 31, 2015Publication date: December 24, 2015Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
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Patent number: 9142423Abstract: Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.Type: GrantFiled: March 26, 2014Date of Patent: September 22, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Patent number: 9122175Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.Type: GrantFiled: October 11, 2012Date of Patent: September 1, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
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Publication number: 20140199787Abstract: Provided is a method for creating a mask blank that includes a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detection of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.Type: ApplicationFiled: March 26, 2014Publication date: July 17, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Patent number: 8715890Abstract: Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.Type: GrantFiled: January 31, 2012Date of Patent: May 6, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Publication number: 20140106262Abstract: A system and method for repairing a photolithographic mask is provided. An embodiment comprises forming a shielding layer over an absorbance layer on a substrate. Once the shielding layer is in place, the absorbance layer may be repaired using, e.g., an e-beam process to initiate a reaction to repair a defect in the absorbance layer, with the shielding layer being used to shield the remainder of the absorbance layer from undesirable etching during the repair process.Type: ApplicationFiled: October 11, 2012Publication date: April 17, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Jong-Yuh Chang, Boming Hsu, Tran-Hui Shen
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Publication number: 20130193565Abstract: Provided is a method for creating a mask blank that include a stop layer. The stop layer is optically compatible and process compatible with other layers included as part of the mask blanks. Such blanks may include EUV, phase-shifting, or OMOG masks. The stop layer includes molybdenum, silicon, and nitride in a proportion that allows for compatibility and aids in detection by a residual gas analyzer. Provided is also a method for the patterning of mask blanks with a stop layer, particularly the method for removing semi-transparent residue defects that may occur due to problems in prior mask creation steps. The method involves the detect of included materials with a residual gas analyzer. Provided is also a mask blank structure which incorporates the compatible stop layer.Type: ApplicationFiled: January 31, 2012Publication date: August 1, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Chiang Tu, Chun-Lang Chen, Boming Hsu, Tran-Hui Shen
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Patent number: 7871742Abstract: A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.Type: GrantFiled: April 5, 2007Date of Patent: January 18, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Lang Chen, Tran-Hui Shen, Fei-Gwo Tsai, Chien-Chao Huang
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Publication number: 20080248404Abstract: A method for controlling phase angle of a mask is provided. A mask comprising a substrate and an absorber is formed. A nitrogen-containing plasma treatment is performed on the mask to reduce the phase angle. Alternatively, a nitrogen-containing plasma treatment is performed on the mask, followed by a vacuum ultraviolet treatment to form a passivated layer on the mask.Type: ApplicationFiled: April 5, 2007Publication date: October 9, 2008Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Lang Chen, Tran-Hui Shen, Fei-Gwo Tsai, Chien-Chao Huang