Patents by Inventor Trong Phan

Trong Phan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor and method for manufacturing thin film transistor
    Patent number: 9536993
    Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: January 3, 2017
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tatsuya Shimoda, Satoshi Inoue, Tue Trong Phan, Takaaki Miyasako, Jinwang Li
  • THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    Publication number: 20150076487
    Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.
    Type: Application
    Filed: March 18, 2013
    Publication date: March 19, 2015
    Inventors: Tatsuya Shimoda, Satoshi Inoue, Tue Trong Phan, Takaaki Miyasako, Jinwang Li