Abstract: A high voltage step regulator, such as would be used to provide a regulated low voltage (on the order of a few volts) from a high voltage external supply (e.g. 12V), is presented. To protect the output transistor, through which the output is provided from the input, from breakdown, a depletion type device is connected between the supply and the output transistor. The control gate of the depletion device is then connected to the output level of the regulator. This reduces the voltage drop across the output transistor, helping to avoid violating design rules (EDR) on how great a voltage differential can be placed across the output transistor. Examples of applications for such a circuit are for various operating voltages on a non-volatile memory chip operating with a high voltage power supply.

Abstract: Bone fixation methods and devices with an elongate body having a longitudinal axis and having a flexible state and a rigid state, a plurality of grippers, a rigid hub connected to the elongated body, and an actuator operably connected to the grippers to deploy the grippers from a first shape to an expanded second shape. One method can include inserting a bone fixation device into an intramedullary space of the bone to place at least a portion of an elongate body of the fixation device in a flexible state on one side of the fracture and at least a portion of a rigid hub on another side of the fracture, and operating an actuator to deploy a plurality of grippers of the fixation device to engage an inner surface of the intramedullary space to anchor the fixation device to the bone.

Abstract: A process is presented for the production of light olefins. The process provides for the separation of the effluent stream from a catalytic cracking process into a stream having light olefins and a stream having heavier hydrocarbons. The heavier stream is oligomerized to generate an oligomer stream having heavier hydrocarbons, and then separated into a stream to be passed to the catalytic cracking process, and a stream to be passed to a reforming unit.

Abstract: An integrated process and apparatus for conversion of gas oil and heavy oil is described. The process includes passing a gas oil feed to a fluid catalytic cracking (FCC) zone to obtain a FCC effluent; separating the FCC effluent in a separation zone into at least two fractions comprising a clarified slurry oil fraction and an overhead fraction; passing the clarified slurry oil fraction to a slurry hydrocracking zone forming at least a naphtha stream; and recycling at least a portion of the slurry hydrocracking naphtha stream to the FCC zone.

Abstract: Methods and apparatuses are provided for cracking a hydrocarbon. The method includes contacting a first hydrocarbon stream with a first cracking catalyst at a first cracking temperature in a first riser to produce a first riser effluent and a first spent catalyst. A second hydrocarbon stream is contacted with a second cracking catalyst at a second cracking temperature in a second riser to produce a second riser effluent and a second spent catalyst, where the second cracking temperature is less than the first cracking temperature. The first riser effluent and the second riser effluent are combined to produce a mixed riser effluent, and the mixed riser effluent is fractionated in a fractionation zone to produce a light cycle oil. The first spent catalyst and the second spent catalyst are combined in a reactor to produce a mixed spent catalyst.

Abstract: A process and apparatus for recycling LCO and/or HCO to a hydroprocessing zone to saturate aromatics for cracking in an FCC unit is disclosed. The recycle cracked stream may be recycled to a downstream hydroprocessing zone to avoid a first hydroprocessing zone that is primarily for demetallizing (and desulfurizing) feed to the FCC unit.

Abstract: A process and apparatus for recycling LCO and/or HCO to a hydroprocessing zone to saturate aromatics for cracking in an FCC unit is disclosed. The recycle cracked stream may be recycled to a downstream hydroprocessing zone to avoid a first hydroprocessing zone that is primarily for demetallizing (and desulfurizing) feed to the FCC unit.

Abstract: A process and apparatus for recycling LCO and/or HCO to a hydroprocessing zone to saturate aromatics for cracking in an FCC unit is disclosed. The recycle cracked stream may be recycled to a downstream hydroprocessing zone to avoid a first hydroprocessing zone that is primarily for demetallizing (and desulfurizing) feed to the FCC unit.

Abstract: An integrated hydrocarbon conversion process is described. The process includes contacting a heavy hydrocarbon feedstock with a hydrocarbon cracking catalyst in a fluidized reactor zone to produce light olefins to form a fluid catalytic cracker (FCC) effluent stream comprising a range of hydrocarbons. The FCC effluent stream is separated to form at least a stream rich in C4 hydrocarbons which comprises isobutane and 1-butene. The stream rich in C4 hydrocarbons is introduced into an alkylation reaction zone where the isobutane and the 1-butene are alkylated to form a reaction product mixture comprising dimethylhexanes and C9+ hydrocarbons. The reaction product mixture is dehydrocyclized to form a stream rich in xylenes.

Abstract: In a charge pump system using a capacitive voltage divider, or other feedback circuit requiring periodic refreshing, in order to refresh the circuit, system operations would typically need to be suspended in order to refresh the capacitors if charge leakage begins to affect the output level. This can lead to delay and power inefficiencies. To overcome this, two feedback circuits are used so that while one is active, the other can have its capacitors' state refreshed. By alternating the two networks, delay can be avoided and power use reduced.

Abstract: In a charge pump system using a capacitive voltage divider, or other feedback circuit requiring periodic refreshing, in order to refresh the circuit, system operations would typically need to be suspended in order to refresh the capacitors if charge leakage begins to affect the output level. This can lead to delay and power inefficiencies. To overcome this, two feedback circuits are used so that while one is active, the other can have its capacitors' state refreshed. By alternating the two networks, delay can be avoided and power use reduced.

Abstract: Bone fixation methods and devices with an elongate body having a longitudinal axis and having a flexible state and a rigid state, a plurality of grippers, a rigid hub connected to the elongated body, and an actuator operably connected to the grippers to deploy the grippers from a first shape to an expanded second shape. One method can include inserting a bone fixation device into an intramedullary space of the bone to place at least a portion of an elongate body of the fixation device in a flexible state on one side of the fracture and at least a portion of a rigid hub on another side of the fracture, and operating an actuator to deploy a plurality of grippers of the fixation device to engage an inner surface of the intramedullary space to anchor the fixation device to the bone.

Abstract: A regulator system for a charge pump system divides the binary decoding into two branches. One controls a set of parallel connected resistors for fine output voltage steps. The other branch controls a serial resistor to provide the large step size. For example, a 9-bit digital input signal is split into 2 least significant for the fine adjustment and the other 7 bits for the larger adjustments. In the example of a 50 mV step size, in one current path 2 bits of the binary input then control two parallel resistors for 50 mV and 100 mV step size, and in the other current path 7 bits are used for one-hot-decode control serial resistors to provide a 200 mV step size. A unity gain operational amplifier and a high voltage device are added in between the two branches to decouple the parasitic capacitance of large parallel resistors from the other elements.

Abstract: A regulator system for a charge pump system divides the binary decoding into two branches. One controls a set of parallel connected resistors for fine output voltage steps. The other branch controls a serial resistor to provide the large step size. For example, a 9-bit digital input signal is split into 2 least significant for the fine adjustment and the other 7 bits for the larger adjustments. In the example of a 50 mV step size, in one current path 2 bits of the binary input then control two parallel resistors for 50 mV and 100 mV step size, and in the other current path 7 bits are used for one-hot-decode control serial resistors to provide a 200 mV step size. A unity gain operational amplifier and a high voltage device are added in between the two branches to decouple the parasitic capacitance of large parallel resistors from the other elements.

Abstract: A charge pump circuit for generating an output voltage is described. Charge pump circuits typically have two branches. As the clocks supplying the branches of a charge pump circuit alternate, the output of each branch will alternately provide an output voltage, which are then combined to form the pump output. The techniques described here allow charge to be transferred between the two branches, so that as the capacitor of one branch discharges, it is used to charge up the capacitor in the other branch. An exemplary embodiment using a voltage doubler-type of circuit, with the charge transfer between the branches accomplished using a switch controller by a boosted version of the clock signal, which is provided by a one-sided voltage doubler.

Abstract: Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH4) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.

Abstract: A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N2 with less than 10% H2, performing planarization, performing in-situ low-H NH3 plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.

Abstract: A level shifter circuit suitable for high voltage applications with shoot-through current isolation is presented. The level shifter receives a first enable signal and receives an input voltage at a first node and supplies an output voltage at a second node. The circuit provides the output voltage from the input voltage in response to the first enable signal being asserted and sets the output node to a low voltage value when the first enable signal is de-asserted. The level shifting circuit includes a depletion type NMOS transistor, having a gate connected to the output node, and a PMOS transistor, having a gate connected to the first enable signal. It also includes a first resistive element that is distinct from the NMOS and PMOS transistors. The NMOS transistor, the PMOS transistor and the first resistive elements are connected in series between the first and second nodes, with the NMOS transistor being connected to the first node.

Abstract: A non-volatile memory device has individual pages of memory cells to be sensed in parallel. The memory device includes a source level tracking circuit coupled to receive a predetermined word line voltage from a word line voltage supply and the voltage level at the aggregate source node of one or more pages and coupled to provide to word lines of the memory an output voltage during the sensing operation, where the source level tracking circuit includes an op amp whereby the output voltage is the word line voltage offset by an amount to track the voltage level at the aggregate node and compensate for source bias errors due to a finite resistance in the ground loop.

Abstract: Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH4) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.