Patents by Inventor Tsai-Sheng Gau

Tsai-Sheng Gau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240213034
    Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on the first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.
    Type: Application
    Filed: March 11, 2024
    Publication date: June 27, 2024
    Inventors: Shih-Ming Chang, Chih-Ming Lai, Chung-Ju Lee, Ru-Gun Liu, Shau-Lin Shue, Tien-I Bao, Tsai-Sheng Gau
  • Publication number: 20240178002
    Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.
    Type: Application
    Filed: February 5, 2024
    Publication date: May 30, 2024
    Inventors: Yung-Sung Yen, Chung-Ju Lee, Chun-Kuang Chen, Chia-Tien Wu, Ta-Ching Yu, Kuei-Shun Chen, Ru-Gun Liu, Shau-Lin Shue, Tsai-Sheng Gau, Yung-Hsu Wu
  • Publication number: 20240168373
    Abstract: A photoresist composition includes a mixture. The mixture includes a first photosensitive material and a second photosensitive material. The first photosensitive material is a 6-Sn oxide cluster, a 12-Sn oxide cluster or a combination thereof. The second photosensitive material has a composition being different from a composition of the first photosensitive material.
    Type: Application
    Filed: June 13, 2023
    Publication date: May 23, 2024
    Applicants: Taiwan Semiconductor Manufacturing Company, Ltd., National Tsing Hua University
    Inventors: Jui-Hsiung LIU, Tsai-Sheng GAU, Burn Jeng LIN, Yan-Ru WU, Ting-An LIN, Han-Tsung TSAI, Po-Hsiung CHEN
  • Publication number: 20240111210
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: May 9, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Pin-Chia LIAO, Ting-An LIN, Ting-An SHIH, Yu-Fang TSENG, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Publication number: 20240112912
    Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.
    Type: Application
    Filed: July 28, 2023
    Publication date: April 4, 2024
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITY
    Inventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
  • Patent number: 11929258
    Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: March 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Ming Chang, Chih-Ming Lai, Ru-Gun Liu, Tsai-Sheng Gau, Chung-Ju Lee, Tien-I Bao, Shau-Lin Shue
  • Patent number: 11894238
    Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Sung Yen, Chung-Ju Lee, Chun-Kuang Chen, Chia-Tien Wu, Ta-Ching Yu, Kuei-Shun Chen, Ru-Gun Liu, Shau-Lin Shue, Tsai-Sheng Gau, Yung-Hsu Wu
  • Patent number: 11854820
    Abstract: A method includes forming a first layer on a substrate; forming a first plurality of trenches in the first layer by a patterning process; and forming a second plurality of trenches in the first layer by another patterning process, resulting in combined trench patterns in the first layer. A first trench of the second plurality connects two trenches of the first plurality. The method further includes forming dielectric spacer features on sidewalls of the combined trench patterns. A space between two opposing sidewalls of the first trench is completely filled by the dielectric spacer features and another space between two opposing sidewalls of one of the two trenches is partially filled by the dielectric spacer features.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ru-Gun Liu, Cheng-Hsiung Tsai, Chung-Ju Lee, Chih-Ming Lai, Chia-Ying Lee, Jyu-Horng Shieh, Ken-Hsien Hsieh, Ming-Feng Shieh, Shau-Lin Shue, Shih-Ming Chang, Tien-I Bao, Tsai-Sheng Gau
  • Publication number: 20230367942
    Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.
    Type: Application
    Filed: July 26, 2023
    Publication date: November 16, 2023
    Inventors: Chia-Ping CHIANG, Ming-Hui CHIH, Chih-Wei HSU, Ping-Chieh WU, Ya-Ting CHANG, Tsung-Yu WANG, Wen-Li CHENG, Hui En YIN, Wen-Chun HUANG, Ru-Gun LIU, Tsai-Sheng GAU
  • Patent number: 11790145
    Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: October 17, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Ping Chiang, Ming-Hui Chih, Chih-Wei Hsu, Ping-Chieh Wu, Ya-Ting Chang, Tsung-Yu Wang, Wen-Li Cheng, Hui En Yin, Wen-Chun Huang, Ru-Gun Liu, Tsai-Sheng Gau
  • Publication number: 20220365421
    Abstract: A method for preparing a pellicle assembly includes reducing the thickness of one or more initial membrane(s) to obtain a pellicle membrane. The pellicle membrane is then affixed to a mounting frame to obtain the pellicle assembly. Compressive pressure can be applied to reduce the thickness of the initial membrane(s). Alternatively, the thickness can be reduced by stretching the initial membrane(s) to obtain an extended membrane. A mounting frame is then affixed to a portion of the extended membrane. The mounting frame and the portion of the extended membrane are then separated from the remainder of the extended membrane to obtain the pellicle assembly. The resulting pellicle assemblies include a pellicle membrane that is attached to a mounting frame. The pellicle membrane can be formed from nanotubes and has a combination of high transmittance, low deflection, and small pore size.
    Type: Application
    Filed: May 12, 2021
    Publication date: November 17, 2022
    Inventors: Hsin-Chang Lee, Pei-Cheng Hsu, Ta-Cheng Lien, Li-Jui Chen, Tsai-Sheng Gau, Chin-Hsiang Lin
  • Publication number: 20220365420
    Abstract: A pellicle assembly includes a pellicle membrane and a conformal coating on an outer surface of the pellicle membrane. The pellicle membrane can be formed with multiple layers and has a combination of high transmittance, low deflection, and small pore size. The conformal coating is intended to protect the pellicle membrane from damage that can occur due to heat and hydrogen plasma created during EUV exposure.
    Type: Application
    Filed: May 12, 2021
    Publication date: November 17, 2022
    Inventors: Pei-Cheng Hsu, Ta-Cheng Lien, Hsin-Chang Lee, Tsai-Sheng Gau, Chin-Hsiang Lin
  • Publication number: 20220344170
    Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.
    Type: Application
    Filed: July 11, 2022
    Publication date: October 27, 2022
    Inventors: Yung-Sung Yen, Chung-Ju Lee, Chun-Kuang Chen, Chia-Tien Wu, Ta-Ching Yu, Kuei-Shun Chen, Ru-Gun Liu, Shau-Lin Shue, Tsai-Sheng Gau, Yung-Hsu Wu
  • Publication number: 20220335192
    Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.
    Type: Application
    Filed: June 29, 2022
    Publication date: October 20, 2022
    Inventors: Chia-Ping CHIANG, Ming-Hui CHIH, Chih-Wei HSU, Ping-Chieh WU, Ya-Ting CHANG, Tsung-Yu WANG, Wen-Li CHENG, Hui En YIN, Wen-Chun HUANG, Ru-Gun LIU, Tsai-Sheng GAU
  • Patent number: 11392742
    Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.
    Type: Grant
    Filed: October 5, 2020
    Date of Patent: July 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ping Chiang, Ming-Hui Chih, Chih-Wei Hsu, Ping-Chieh Wu, Ya-Ting Chang, Tsung-Yu Wang, Wen-Li Cheng, Hui En Yin, Wen-Chun Huang, Ru-Gun Liu, Tsai-Sheng Gau
  • Patent number: 11387113
    Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.
    Type: Grant
    Filed: October 26, 2020
    Date of Patent: July 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Sung Yen, Chung-Ju Lee, Chun-Kuang Chen, Chia-Tien Wu, Ta-Ching Yu, Kuei-Shun Chen, Ru-Gun Liu, Shau-Lin Shue, Tsai-Sheng Gau, Yung-Hsu Wu
  • Publication number: 20210366726
    Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.
    Type: Application
    Filed: August 9, 2021
    Publication date: November 25, 2021
    Inventors: Shih-Ming Chang, Chih-Ming Lai, Ru-Gun Liu, Tsai-Sheng Gau, Chung-Ju Lee, Tien-I Bao, Shau-Lin Shue
  • Patent number: 11087994
    Abstract: An integrated circuit structure includes a first metal feature formed into a first dielectric layer, a second metal feature formed into a second dielectric layer, the second dielectric layer being disposed on said first dielectric layer, and a via connecting the first metal feature to the second metal feature, wherein a top portion of the via is offset from a bottom portion of the via.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: August 10, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Ming Chang, Chih-Ming Lai, Ru-Gun Liu, Tsai-Sheng Gau, Chung-Ju Lee, Tien-I Bao, Shau-Lin Shue
  • Publication number: 20210175081
    Abstract: The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to form a first feature. A portion of the first feature extends over the spacer feature. The method further includes steps of removing the portion of the first feature extending over the spacer feature and removing the spacer feature. Other methods and associated patterned semiconductor wafers are also provided herein.
    Type: Application
    Filed: February 22, 2021
    Publication date: June 10, 2021
    Inventors: Tsong-Hua Ou, Ken-Hsien Hsieh, Shih-Ming Chang, Wen-Chun Huang, Chih-Ming Lai, Ru-Gun Liu, Tsai-Sheng Gau
  • Publication number: 20210057231
    Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.
    Type: Application
    Filed: October 26, 2020
    Publication date: February 25, 2021
    Inventors: Yung-Sung Yen, Chung-Ju Lee, Chun-Kuang Chen, Chia-Tien Wu, Ta-Ching Yu, Kuei-Shun Chen, Ru-Gun Liu, Shau-Lin Shue, Tsai-Sheng Gau, Yung-Hsu Wu