Patents by Inventor Tsai Tsung Tsai
Tsai Tsung Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240404954Abstract: A package and a method of manufacturing the same are provided. The package includes a first die, a second die, a third die, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The third die is disposed on the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the third die and fills in a gap between the first die, the second die, and the third die. The RDL structure is disposed on the third die and the encapsulant.Type: ApplicationFiled: August 12, 2024Publication date: December 5, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsai-Tsung Tsai, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Hsiang Chiu, Yi-Da Tsai
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Publication number: 20240153896Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: ApplicationFiled: January 12, 2024Publication date: May 9, 2024Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Patent number: 11901319Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: GrantFiled: April 19, 2021Date of Patent: February 13, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Publication number: 20230378153Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.Type: ApplicationFiled: July 28, 2023Publication date: November 23, 2023Inventors: Meng-Tse Chen, Kuei-Wei Huang, Tsai-Tsung Tsai, Ai-Tee Ang, Ming-Da Cheng, Chung-Shi Liu
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Patent number: 11776945Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.Type: GrantFiled: September 24, 2019Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Meng-Tse Chen, Kuei-Wei Huang, Tsai-Tsung Tsai, Ai-Tee Ang, Ming-Da Cheng, Chung-Shi Liu
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Publication number: 20210242150Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: ApplicationFiled: April 19, 2021Publication date: August 5, 2021Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Patent number: 11075131Abstract: A semiconductor package including a semiconductor die, a molding compound and a redistribution structure is provided. The molding compound laterally wraps around the semiconductor die, wherein the molding compound includes a base material and a first filler particle and a second filler particle embedded in the base material. The first filler particle has a first recess located in a top surface of the first filler particle, and the second filler particle has at least one hollow void therein. The redistribution structure is disposed on the semiconductor die and the molding compound, wherein the redistribution structure has a polymer dielectric layer. The polymer dielectric layer includes a body portion and a first protruding portion protruding from the body portion, wherein the body portion is in contact with the base material and the top surface of the first filler particle, and the first protruding portion fits with the first recess of the first filler particle.Type: GrantFiled: August 22, 2019Date of Patent: July 27, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Da Tsai, Ching-Hua Hsieh, Chih-Wei Lin, Tsai-Tsung Tsai, Sheng-Chieh Yang, Chia-Min Lin
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Patent number: 11056474Abstract: According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.Type: GrantFiled: November 19, 2018Date of Patent: July 6, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Tsai-Tsung Tsai, Wei-Hung Lin, Ming-Da Cheng
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Patent number: 10985122Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: GrantFiled: December 16, 2019Date of Patent: April 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Publication number: 20210057298Abstract: A semiconductor package including a semiconductor die, a molding compound and a redistribution structure is provided. The molding compound laterally wraps around the semiconductor die, wherein the molding compound includes a base material and a first filler particle and a second filler particle embedded in the base material. The first filler particle has a first recess located in a top surface of the first filler particle, and the second filler particle has at least one hollow void therein. The redistribution structure is disposed on the semiconductor die and the molding compound, wherein the redistribution structure has a polymer dielectric layer. The polymer dielectric layer includes a body portion and a first protruding portion protruding from the body portion, wherein the body portion is in contact with the base material and the top surface of the first filler particle, and the first protruding portion fits with the first recess of the first filler particle.Type: ApplicationFiled: August 22, 2019Publication date: February 25, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Da Tsai, Ching-Hua Hsieh, Chih-Wei Lin, Tsai-Tsung Tsai, Sheng-Chieh Yang, Chia-Min Lin
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Publication number: 20200144206Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: ApplicationFiled: December 16, 2019Publication date: May 7, 2020Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Publication number: 20200020677Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.Type: ApplicationFiled: September 24, 2019Publication date: January 16, 2020Inventors: Meng-Tse Chen, Kuei-Wei Huang, Tsai-Tsung Tsai, Ai-Tee Ang, Ming-Da Cheng, Chung-Shi Liu
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Publication number: 20200020634Abstract: A package and a method of manufacturing the same are provided. The package includes a first die, a second die, a third die, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The third die is disposed on the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the third die and fills in a gap between the first die, the second die, and the third die. The RDL structure is disposed on the third die and the encapsulant.Type: ApplicationFiled: July 16, 2018Publication date: January 16, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsai-Tsung Tsai, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Hsiang Chiu, Yi-Da Tsai
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Patent number: 10510697Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: GrantFiled: July 23, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Patent number: 10490539Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.Type: GrantFiled: August 4, 2016Date of Patent: November 26, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Tse Chen, Kuei-Wei Huang, Tsai-Tsung Tsai, Ai-Tee Ang, Ming-Da Cheng, Chung-Shi Liu
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Publication number: 20190088635Abstract: According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.Type: ApplicationFiled: November 19, 2018Publication date: March 21, 2019Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Tsai-Tsung Tsai, Wei-Hung Lin, Ming-Da Cheng
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Patent number: 10147693Abstract: An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.Type: GrantFiled: May 4, 2015Date of Patent: December 4, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien Ling Hwang, Yeong-Jyh Lin, Yi-Li Hsiao, Ming-Da Cheng, Tsai-Tsung Tsai, Chung-Shi Liu, Mirng-Ji Lii, Chen-Hua Yu
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Patent number: 10134717Abstract: According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.Type: GrantFiled: December 9, 2016Date of Patent: November 20, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Tsai-Tsung Tsai, Wei-Hung Lin, Ming-Da Cheng
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Publication number: 20180331055Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: ApplicationFiled: July 23, 2018Publication date: November 15, 2018Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
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Patent number: 10032734Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.Type: GrantFiled: September 19, 2016Date of Patent: July 24, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu