Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: According to an exemplary embodiment, a semiconductor package is provided. The A semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: A method of manufacturing a semiconductor device includes providing a wafer, grinding a backside of the wafer, disposing a backside film on the backside of the wafer, cutting the wafer to singulate a plurality of dies from the wafer, and forming a mark on the backside film disposed on each of the plurality of dies by a laser operation.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A method of manufacturing a semiconductor device includes providing a wafer, grinding a backside of the wafer, disposing a backside film on the backside of the wafer, cutting the wafer to singulate a plurality of dies from the wafer, and forming a mark on the backside film disposed on each of the plurality of dies by a laser operation.

Abstract: An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

Abstract: According to an exemplary embodiment, a semiconductor package is provided. The A semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.

Abstract: An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

Abstract: A method includes laminating a Non-Conductive Film (NCF) over a first package component, and bonding a second package component on the first package component. The NCF and the second package component are on a same side of the first package component. Pillars of a mold tool are then forced into the NCF to form openings in the NCF. The connectors of the first package component are exposed through the openings.

Abstract: The present disclosure relates to a tool arrangement and method to reduce warpage within a package-on-package semiconductor structure, while minimizing void formation within an electrically-insulating adhesive which couples the packages. A pressure generator and a variable frequency microwave source are coupled to a process chamber which encapsulates a package-on-package semiconductor structure. The package-on-package semiconductor structure is simultaneously heated by the variable frequency microwave source at variable frequency, variable temperature, and variable duration and exposed to an elevated pressure by the pressure generator. This combination for microwave heating and elevated pressure limits the amount of warpage introduced while preventing void formation within an electrically-insulating adhesive which couples the substrates of the package-on-package semiconductor structure.

Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.

Abstract: A package-on-package (PoP) device including a substrate having an array of contact pads arranged around a periphery of the substrate, a logic chip mounted to the substrate inward of the array of contact pads, and non-solder bump structures mounted on less than an entirety of the contact pads available.

Abstract: The present disclosure relates to a tool arrangement and method to reduce warpage within a package-on-package semiconductor structure, while minimizing void formation within an electrically-insulating adhesive which couples the packages. A pressure generator and a variable frequency microwave source are coupled to a process chamber which encapsulates a package-on-package semiconductor structure. The package-on-package semiconductor structure is simultaneously heated by the variable frequency microwave source at variable frequency, variable temperature, and variable duration and exposed to an elevated pressure by the pressure generator. This combination for microwave heating and elevated pressure limits the amount of warpage introduced while preventing void formation within an electrically-insulating adhesive which couples the substrates of the package-on-package semiconductor structure.

Abstract: A method includes laminating a Non-Conductive Film (NCF) over a first package component, and bonding a second package component on the first package component. The NCF and the second package component are on a same side of the first package component. Pillars of a mold tool are then forced into the NCF to form openings in the NCF. The connectors of the first package component are exposed through the openings.

Abstract: An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

Abstract: A dielectric material is provided. The dielectric material includes a main composition including a Ba2Ti9O20 having a weight ranged from 50 to 94.9 wt %; a first sub-composition including a GeO2 and an MnCO3 respectively having a weight ranged from 0.01 to 10 wt %; and a second sub-composition including a glass additive composed of a B2O3, a ZnO, a SiO2 and at least one of a CuO, a CaCO3 and a BaCO3, wherein the glass additive has a weight ranged from 5 to 40 wt %.