Patents by Inventor Tsai-Yu Huang
Tsai-Yu Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8927441Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.Type: GrantFiled: November 13, 2013Date of Patent: January 6, 2015Assignee: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chris Carlson
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Patent number: 8866281Abstract: A three-dimensional integrated circuit is disclosed, including a first interposer including through substrate vias (TSV) therein and circuits thereon; a plurality of first active dies disposed on a first side of the first interposer, a plurality of first intermediate interposers, each including through substrate vias (TSV), disposed on the first side of the first interposer, and a second interposer including through substrate vias (TSV) therein and circuits thereon supported by the first intermediate interposers.Type: GrantFiled: July 19, 2012Date of Patent: October 21, 2014Assignee: Nanya Technology CorporationInventor: Tsai-Yu Huang
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METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL
Publication number: 20140210049Abstract: Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.Type: ApplicationFiled: April 3, 2014Publication date: July 31, 2014Applicant: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson -
Publication number: 20140191234Abstract: A 3-D chip stacked structure is disclosed. Each chip layer is provided with plural single-layered conductive members where among the same chip layer the two adjacent conductive members are structurally formed in minor symmetric way with each other along a chip longitudinal direction and the arrangements of the single-layered conductive members of the two adjacent chip layers are shifted by a test pad distance. The single-layered conductive members of the two adjacent chip layers are communicated through a vertical TSV (through silicon via). Therefore, a selection signal or an enabling signal might be transferred through this specific metal layer and related TSV to reach targeting chip layer and targeting circuit.Type: ApplicationFiled: January 3, 2014Publication date: July 10, 2014Inventors: Tsai-Yu Huang, Yi-Feng Huang
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Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material
Patent number: 8748283Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.Type: GrantFiled: May 28, 2013Date of Patent: June 10, 2014Assignee: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson -
Publication number: 20140065301Abstract: Methods of forming rutile titanium dioxide comprise exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to an atmosphere consisting of oxygen gas (O2) to produce an oxidized transition metal over an unoxidized portion of the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal by atomic layer deposition. The oxidized transition metal is sequentially exposed to a titanium halide precursor and an oxidizer. Other methods include oxidizing a portion of a ruthenium material to ruthenium(IV) oxide using an atmosphere consisting of O2, nitric oxide (NO), or nitrous oxide (N2O); and introducing a gaseous titanium halide precursor and water vapor to the ruthenium(IV) oxide to form rutile titanium dioxide on the ruthenium(IV) oxide by atomic layer deposition. Some methods include exposing transition metal to an atmosphere consisting essentially of O2, NO, and N2O.Type: ApplicationFiled: November 13, 2013Publication date: March 6, 2014Applicant: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chris Carlson
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Publication number: 20140021599Abstract: A three-dimensional integrated circuit is disclosed, including a first interposer including through substrate vias (TSV) therein and circuits thereon; a plurality of first active dies disposed on a first side of the first interposer, a plurality of first intermediate interposers, each including through substrate vias (TSV), disposed on the first side of the first interposer, and a second interposer including through substrate vias (TSV) therein and circuits thereon supported by the first intermediate interposers.Type: ApplicationFiled: July 19, 2012Publication date: January 23, 2014Applicant: NANYA TECHNOLOGY CORPORATIONInventor: Tsai-Yu Huang
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Patent number: 8609553Abstract: Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.Type: GrantFiled: February 7, 2011Date of Patent: December 17, 2013Assignee: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chris Carlson
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Publication number: 20130316153Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.Type: ApplicationFiled: July 31, 2013Publication date: November 28, 2013Applicant: Micron Technology, Inc.Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris M. Carlson, Vassil N. Antonov
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Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same
Patent number: 8564095Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.Type: GrantFiled: February 7, 2011Date of Patent: October 22, 2013Assignee: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson -
METHODS OF FORMING CAPACITORS AND SEMICONDUCTOR DEVICES INCLUDING A RUTILE TITANIUM DIOXIDE MATERIAL
Publication number: 20130260529Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.Type: ApplicationFiled: May 28, 2013Publication date: October 3, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson -
Patent number: 8518486Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.Type: GrantFiled: May 12, 2010Date of Patent: August 27, 2013Assignee: Micron Technology, Inc.Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris Carlson, Vassil Antonov
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Patent number: 8421193Abstract: An integrated circuit device includes a bottom wafer, at least one stacking wafer positioned on the bottom wafer, and at least one conductive via penetrating through the stacking wafer and into the bottom wafer in a substantially linear manner, wherein the bottom wafer and the stacking wafer are bonded by an intervening adhesive layer, and no bump pad is positioned between the bottom wafer and the stacking wafer. A method for preparing an integrated circuit device includes the steps of forming a bottom wafer, forming at least one stacking wafer, bonding the at least one stacking wafer to the bottom wafer by an intervening adhesive layer, and forming at least one conductive via penetrating through the stacking wafer and into the bottom wafer in a substantially linear manner, wherein no bump pad is positioned between the bottom wafer and the stacking wafer.Type: GrantFiled: November 18, 2010Date of Patent: April 16, 2013Assignee: Nanya Technology CorporationInventor: Tsai Yu Huang
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Patent number: 8420208Abstract: A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.Type: GrantFiled: August 11, 2010Date of Patent: April 16, 2013Assignee: Micron Technology, Inc.Inventors: Tsai-Yu Huang, Ching-Kai Lin
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Publication number: 20120199944Abstract: Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.Type: ApplicationFiled: February 7, 2011Publication date: August 9, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chun-I Hsieh, Chris Carlson
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Publication number: 20120202356Abstract: Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.Type: ApplicationFiled: February 7, 2011Publication date: August 9, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsai-Yu Huang, Vishwanath Bhat, Vassil Antonov, Chris Carlson
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Publication number: 20120168935Abstract: An integrated circuit device includes a bottom wafer having a first annular dielectric block, at least one stacking wafer having a second annular dielectric block positioned on the bottom wafer, and a conductive via penetrating through the stacking wafer and into the bottom wafer in a substantially linear manner. In one embodiment of the present invention, the bottom wafer and the stacking wafer are bonded by an intervening adhesive layer, no bump pad is positioned between the bottom wafer and the stacking wafer, and the conductive via is positioned within the first annular dielectric block and the second annular dielectric block.Type: ApplicationFiled: January 3, 2011Publication date: July 5, 2012Applicant: NANYA TECHNOLOGY CORP.Inventor: Tsai Yu Huang
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Publication number: 20120126394Abstract: An integrated circuit device includes a bottom wafer, at least one stacking wafer positioned on the bottom wafer, and at least one conductive via penetrating through the stacking wafer and into the bottom wafer in a substantially linear manner, wherein the bottom wafer and the stacking wafer are bonded by an intervening adhesive layer, and no bump pad is positioned between the bottom wafer and the stacking wafer. A method for preparing an integrated circuit device includes the steps of forming a bottom wafer, forming at least one stacking wafer, bonding the at least one stacking wafer to the bottom wafer by an intervening adhesive layer, and forming at least one conductive via penetrating through the stacking wafer and into the bottom wafer in a substantially linear manner, wherein no bump pad is positioned between the bottom wafer and the stacking wafer.Type: ApplicationFiled: November 18, 2010Publication date: May 24, 2012Applicant: NANYA TECHNOLOGY CORPORATIONInventor: Tsai Yu Huang
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Publication number: 20120040162Abstract: A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.Type: ApplicationFiled: August 11, 2010Publication date: February 16, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Tsai-Yu Huang, Ching-Kai Lin
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Publication number: 20110279979Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.Type: ApplicationFiled: May 12, 2010Publication date: November 17, 2011Inventors: Nik Mirin, Tsai-Yu Huang, Vishwanath Bhat, Chris Carlson, Vassil Antonov