Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.

Abstract: A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.

Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. An oxide layer is formed and covers the gate structure and the substrate. A plasma process without oxygen is performed to densify the oxide layer. A material layer is formed and covers the oxide layer. The material layer and the oxide layer are etched to form a dual spacer.

Abstract: A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer.

Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. An oxide layer is formed and covers the gate structure and the substrate. A plasma process without oxygen is performed to densify the oxide layer. A material layer is formed and covers the oxide layer. The material layer and the oxide layer are etched to form a dual spacer.

Abstract: A manufacturing method of a metal gate structure includes first providing a substrate having a dummy gate formed thereon. The dummy gate includes a high-K gate dielectric layer, a bottom barrier layer, a first etch stop layer and a sacrificial layer sequentially and upwardly stacked on the substrate. Then, the sacrificial layer is removed to form a gate trench with the first etch stop layer exposed on the bottom of the gate trench. After forming the gate trench, a first work function metal layer is formed in the gate trench.

Abstract: The present invention relates to a roller type linear guideway which comprises the rail, the slide block, the roller-model, the recirculating-model, and the ender cap. The recirculating-model is make up of two half recirculating-models which are assembled together at a specific angle, and each of the half recirculating-models comprises two U-shaped recirculating piece which includes a return portion, a supporting portion and a reflow portion, the recirculating paths of the roller-models intersect to form a x-type turn. Therefore, there are no a lot of accessories, that can reduce time of fabrication and can save the cost of manufacture.

Abstract: The present invention relates to a roller type linear guideway which comprises the rail, the slide block, the roller-model, the recirculating-model, and the ender cap. The recirculating-model is make up of two half recirculating-models which are assembled together at a specific angle, and each of the half recirculating-models comprises two U-shaped recirculating piece which includes a return portion, a supporting portion and a reflow portion, the recirculating paths of the roller-models intersect to form a x-type turn. Therefore, there are no a lot of accessories, that can reduce time of fabrication and can save the cost of manufacture.