Patents by Inventor Tsang-Jiuh Wu

Tsang-Jiuh Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrateless integrated circuit packages and methods of forming same
    Patent number: 9842825
    Abstract: Integrated circuit packages and methods of forming the same are provided. One or more redistribution layers are formed on a carrier. First connectors are formed on a first side of the RDLs. Dies are bonded to the first side of the RDLs using the first connectors. An encapsulant is formed on the first side of the RDLs around the dies. The carrier is de-bonded from the overlaying structure and second connectors are formed on a second side of the RDLs. The resulting structure in diced to form individual packages.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: December 12, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lin-Chih Huang, Hung-An Teng, Hsin-Yu Chen, Tsang-Jiuh Wu, Cheng-Chieh Hsieh
  • Through via structure
    Patent number: 9831177
    Abstract: An apparatus comprises a through via formed in a substrate. The through via is coupled between a first side and a second side of the substrate. The through via comprises a bottom portion adjacent to the second side of the substrate, wherein the bottom portion is formed of a conductive material. The through via further comprises sidewall portions formed of the conductive material and a middle portion formed between the sidewall portions, wherein the middle portion is formed of a dielectric material.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: November 28, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Lin-Chih Huang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Self-alignment for redistribution layer
    Patent number: 9786580
    Abstract: An apparatus comprising a substrate with multiple electronic devices. An interconnect structure formed on a first side of the substrate interconnects the electronic devices. Dummy TSVs each extend through the substrate and form an alignment mark on a second side of the substrate. Functional TSVs each extend through the substrate and electrically connect to the electronic devices. A redistribution layer (RDL) formed on the second side of the substrate interconnects ones of the dummy TSVs with ones of the functional TSVs. Step heights of the RDL over the functional TSVs are less than a predetermined value, whereas step heights of the RDL over the dummy TSVs are greater than the predetermined value.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: October 10, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ku-Feng Yang, Ming-Tsu Chung, Hong-Ye Shih, Jiung Wu, Chen-Yu Tsai, Hsin-Yu Chen, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Methods of making integrated circuits including conductive structures through substrates
    Patent number: 9773701
    Abstract: A method of forming an integrated circuit includes forming at least one opening through a first surface of a substrate. The method further includes forming at least one conductive structure in the at least one opening. The method further includes removing a portion of the substrate to form a processed substrate having the first surface and a second surface opposite the first surface and to expose a portion of the at least one conductive structure adjacent to the second surface. The at least one conductive structure continuously extending from the first surface through the processed substrate to the second surface of the processed substrate, at least one sidewall of the at least one conductive structure spaced from a sidewall of the at least one opening by an air gap.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: September 26, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yuan-Hung Liu, Ku-Feng Yang, Pei-Ching Kuo, Ming-Tsu Chung, Hsin-Yu Chen, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Interconnection Structure with Confinement Layer
    Publication number: 20170271242
    Abstract: An interconnection structure and method disclosed for providing an interconnection structure that includes conductive features having reduced topographic variations. The interconnection structure includes a contact pad disposed over a substrate. The contact pad includes a first layer of a first conductive material and a second layer of a second conductive material over the first layer. The first conductive material and the second conductive material are made of substantially the same material and have a first average grain size and a second average grain size that is smaller than the first average grain size. The interconnection structure also includes a passivation layer covering the substrate and the contact pad, and the passivation layer has an opening exposing the contact pad.
    Type: Application
    Filed: June 5, 2017
    Publication date: September 21, 2017
    Inventors: Hsiao Yun Lo, Yung-Chi Lin, Yang-Chih Hsueh, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Interconnect Structure and Method of Forming Same
    Publication number: 20170271287
    Abstract: A method includes depositing a dielectric layer over a substrate, patterning the dielectric layer to form a first opening and a second opening, wherein a width of the second opening is greater than a width of the first opening, forming a first metal layer over the dielectric layer, wherein a planar surface of the first metal layer in the second opening is lower than a top surface of the dielectric layer, forming a second metal layer in a conformal manner over the first metal layer, wherein a material of the first metal layer is different from a material of the second metal layer and applying a polishing process to the first metal layer and the second metal layer until the dielectric layer is exposed.
    Type: Application
    Filed: June 5, 2017
    Publication date: September 21, 2017
    Inventors: Hsiao Yun Lo, Lin-Chih Huang, Tasi-Jung Wu, Hsin-Yu Chen, Yung-Chi Lin, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Low cost and ultra-thin chip on wafer on substrate (CoWoS) formation
    Patent number: 9748190
    Abstract: Methods of making and an integrated circuit device. An embodiment method includes patterning a first polymer layer disposed over a first copper seed layer, electroplating a through polymer via in the first polymer layer using the first copper seed layer, a via end surface offset from a first polymer layer surface, forming a second polymer layer over the first polymer layer, the second polymer layer patterned to expose the via end surface, and electroplating an interconnect in the second polymer layer to cap the via end surface using a second copper seed layer.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: August 29, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Yu Chen, Lin-Chih Huang, Tsang-Jiuh Wu, Tasi-Jung Wu, Wen-Chih Chiou
  • Interconnect structure and method of forming same
    Patent number: 9679859
    Abstract: An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the pad comprises a bottom portion formed of a first conductive metal and an upper portion formed of a second conductive metal, and wherein sidewalls of the upper portion are surrounded by the bottom portion and a top surface of the pad is coplanar with a top surface of the first metal line and a passivation layer formed over the dielectric layer.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: June 13, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiao Yun Lo, Lin-Chih Huang, Tasi-Jung Wu, Hsin-Yu Chen, Yung-Chi Lin, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Interconnection structure with confinement layer
    Patent number: 9673132
    Abstract: An interconnection structure and method disclosed for providing an interconnection structure that includes conductive features having reduced topographic variations. The interconnection structure includes a contact pad disposed over a substrate. The contact pad includes a first layer of a first conductive material and a second layer of a second conductive material over the first layer. The first conductive material and the second conductive material are made of substantially the same material and have a first average grain size and a second average grain size that is smaller than the first average grain size. The interconnection structure also includes a passivation layer covering the substrate and the contact pad, and the passivation layer has an opening exposing the contact pad.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: June 6, 2017
    Assignee: Taiwan Semiconductor Manufacting Company, Ltd.
    Inventors: Hsiao Yun Lo, Yung-Chi Lin, Yang-Chih Hsueh, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Singulation and Bonding Methods and Structures Formed Thereby
    Publication number: 20170148765
    Abstract: Methods of singulation and bonding, as well as structures formed thereby, are disclosed. A method includes singulating a first chip and after the singulating the first chip, bonding the first chip to a second chip. The first chip includes a first semiconductor substrate and a first interconnect structure on a front side of the first semiconductor substrate. The singulating the first chip includes etching through a back side of the first semiconductor substrate through the first interconnect structure.
    Type: Application
    Filed: November 24, 2015
    Publication date: May 25, 2017
    Inventors: Chen-Hua Yu, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Device with Through-Substrate Via Structure and Method for Forming the Same
    Publication number: 20170084489
    Abstract: A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.
    Type: Application
    Filed: December 5, 2016
    Publication date: March 23, 2017
    Inventors: Yung-Chi Lin, Yen-Hung Chen, Yin-Hua Chen, Ebin Liao, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via and Method of Forming the Same
    Publication number: 20170011988
    Abstract: A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive layer includes a first portion formed on the concave or convex portion of the through substrate via and a second portion formed on the isolation film. A passivation layer partially covers the conductive layer.
    Type: Application
    Filed: September 19, 2016
    Publication date: January 12, 2017
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Ming-Tsu Chung, HsiaoYun Lo, Hong-Ye Shih, Chia-Yin Chen, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Device with capped through-substrate via structure
    Patent number: 9514986
    Abstract: A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: December 6, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Yen-Hung Chen, Yin-Hua Chen, Ebin Liao, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • SEMICONDUCTOR COMPONENT HAVING THROUGH-SILICON VIAS AND METHOD OF MANUFACTURE
    Publication number: 20160329245
    Abstract: A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.
    Type: Application
    Filed: July 20, 2016
    Publication date: November 10, 2016
    Inventors: Chen-Hua YU, Cheng-Hung CHANG, Ebin LIAO, Chia-Lin YU, Hsiang-Yi WANG, Chun Hua CHANG, Li-Hsien HUANG, Darryl KUO, Tsang-Jiuh WU, Wen-Chih CHIOU
  • Semiconductor device having backside interconnect structure through substrate via and method of forming the same
    Patent number: 9449898
    Abstract: A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive layer includes a first portion formed on the concave or convex portion of the through substrate via and a second portion formed on the isolation film. A passivation layer partially covers the conductive layer.
    Type: Grant
    Filed: July 31, 2013
    Date of Patent: September 20, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Ming-Tsu Chung, HsiaoYun Lo, Hong-Ye Shih, Chia-Yin Chen, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Semiconductor component having through-silicon vias and method of manufacture
    Patent number: 9418923
    Abstract: A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: August 16, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Cheng-Hung Chang, Ebin Liao, Chia-Lin Yu, Hsiang-Yi Wang, Chun Hua Chang, Li-Hsien Huang, Darryl Kuo, Tsang-Jiuh Wu, Wen-Chih Chiou
  • TSV structures and methods for forming the same
    Patent number: 9373575
    Abstract: A device includes a substrate having a front side and a backside, a through-via extending from the backside to the front side of the substrate, and a conductive pad on the backside of the substrate and over the through-via. The conductive pad has a substantially planar top surface. A conductive bump has a non-planar top surface over the substantially planar top surface and aligned to the through-via. The conductive bump and the conductive pad are formed of a same material. No interface is formed between the conductive bump and the conductive pad.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: June 21, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Chi Lin, Hsin-Yu Chen, Wen-Chih Chiou, Ku-Feng Yang, Tsang-Jiuh Wu, Jing-Cheng Lin
  • Interconnect Structure and Method of Forming Same
    Publication number: 20160118356
    Abstract: An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the pad comprises a bottom portion formed of a first conductive metal and an upper portion formed of a second conductive metal, and wherein sidewalls of the upper portion are surrounded by the bottom portion and a top surface of the pad is coplanar with a top surface of the first metal line and a passivation layer formed over the dielectric layer.
    Type: Application
    Filed: January 8, 2016
    Publication date: April 28, 2016
    Inventors: Hsiao Yun Lo, Lin-Chih Huang, Tasi-Jung Wu, Hsin-Yu Chen, Yung-Chi Lin, Ku-Feng Yang, Tsang-Jiuh Wu, Wen-Chih Chiou
  • Integrated Circuit Packages and Methods of Forming Same
    Publication number: 20160071816
    Abstract: Integrated circuit packages and methods of forming the same are provided. One or more redistribution layers are formed on a carrier. First connectors are formed on a first side of the RDLs. Dies are bonded to the first side of the RDLs using the first connectors. An encapsulant is formed on the first side of the RDLs around the dies. The carrier is de-bonded from the overlaying structure and second connectors are formed on a second side of the RDLs. The resulting structure in diced to form individual packages.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 10, 2016
    Inventors: Lin-Chih Huang, Hung-An Teng, Hsin-Yu Chen, Tsang-Jiuh Wu, Cheng-Chieh Hsieh
  • Through Via Structure and Method
    Publication number: 20160071765
    Abstract: A device comprises a via in a substrate comprising a lower via portion with a first width formed of a first conductive material and an upper via portion with a second width greater than the first width, wherein the upper via portion comprises a protection layer formed of the first conductive material and a via fill material portion formed of a second conductive material.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 10, 2016
    Inventors: Yung-Chi Lin, Hung-Pin Chang, Tsang-Jiuh Wu, Wen-Chih Chiou