Patents by Inventor Tseh-Jen Hsieh

Tseh-Jen Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11170967
    Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: November 9, 2021
    Assignee: AXCELIS TECHNOLOGIES, INC.
    Inventors: Neil Bassom, Neil Colvin, Tseh-Jen Hsieh, Michael Ameen
  • Patent number: 11127557
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210287872
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Patent number: 11062873
    Abstract: A terminal system for an ion implantation system has an ion source with a housing and extraction electrode assembly having one or more aperture plates. A gas box is electrically coupled to the ion source. A gas source is within the gas box to provide a gas at substantially the same electrical potential as the ion source assembly. A bleed gas conduit introduces the gas to a region internal to the housing of the ion source and upstream of at least one of the aperture plates. The bleed gas conduit has one or more feed-throughs extending through a body of the ion source assembly, such as a hole in a mounting flange of the ion source. The mounting flange may be a tubular portion having a channel. The bleed gas conduit can further have a gas distribution apparatus defined as a gas distribution ring. The gas distribution ring can generally encircle the tubular portion of the mounting flange.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: July 13, 2021
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K Colvin, Tseh-Jen Hsieh
  • Publication number: 20210090841
    Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.
    Type: Application
    Filed: November 20, 2020
    Publication date: March 25, 2021
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh, Richard Rzeszut, Wendy Colby
  • Patent number: 10847339
    Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.
    Type: Grant
    Filed: January 21, 2019
    Date of Patent: November 24, 2020
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K Colvin, Tseh-Jen Hsieh, Richard Rzeszut, Wendy Colby
  • Publication number: 20200303154
    Abstract: An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.
    Type: Application
    Filed: March 19, 2020
    Publication date: September 24, 2020
    Inventors: Neil Bassom, Neil Colvin, Tseh-Jen Hsieh, Michael Ameen
  • Patent number: 10676370
    Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: June 9, 2020
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil Colvin, Tseh-Jen Hsieh, Neil Basson
  • Patent number: 10535498
    Abstract: An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: January 14, 2020
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh, Paul B. Silverstein
  • Publication number: 20190348252
    Abstract: A terminal system for an ion implantation system has an ion source with a housing and extraction electrode assembly having one or more aperture plates. A gas box is electrically coupled to the ion source. A gas source is within the gas box to provide a gas at substantially the same electrical potential as the ion source assembly. A bleed gas conduit introduces the gas to a region internal to the housing of the ion source and upstream of at least one of the aperture plates. The bleed gas conduit has one or more feed-throughs extending through a body of the ion source assembly, such as a hole in a mounting flange of the ion source. The mounting flange may be a tubular portion having a channel. The bleed gas conduit can further have a gas distribution apparatus defined as a gas distribution ring. The gas distribution ring can generally encircle the tubular portion of the mounting flange.
    Type: Application
    Filed: May 10, 2019
    Publication date: November 14, 2019
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh
  • Publication number: 20190228943
    Abstract: A terminal for an ion implantation system is provided, wherein the terminal has a terminal housing for supporting an ion source configured to form an ion beam. A gas box within the terminal housing has a hydrogen generator configured to produce hydrogen gas for the ion source. The gas box is electrically insulated from the terminal housing, and is further electrically coupled to the ion source. The ion source and gas box are electrically isolated from the terminal housing by a plurality of electrical insulators. A plurality of insulating standoffs electrically isolate the terminal housing from an earth ground. A terminal power supply electrically biases the terminal housing to a terminal potential with respect to the earth ground. An ion source power supply electrically biases the ion source to an ion source potential with respect to the terminal potential. Electrically conductive tubing electrically couples the gas box and ion source.
    Type: Application
    Filed: January 21, 2019
    Publication date: July 25, 2019
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh, Richard Rzeszut, Wendy Colby
  • Patent number: 10361081
    Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: July 23, 2019
    Assignee: AXCELIS TECHNOLOGIES, INC.
    Inventors: Neil Colvin, Tseh-Jen Hsieh
  • Patent number: 10361069
    Abstract: An arc chamber liner has first and second surfaces and a hole having a first diameter. A liner lip having a second diameter extends upwardly from the second surface toward the first surface and surrounds the hole. An electrode has a shaft with a third diameter and a head with a fourth diameter. The third diameter is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter between the second and fourth diameters. A spacing between the liner and electrode lips defines a labyrinth seal to generally prevent contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: July 23, 2019
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh, Paul B. Silverstein
  • Patent number: 10256069
    Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: April 9, 2019
    Assignee: AXCELIS TECHNOLOGIES, INC.
    Inventors: Neil Colvin, Tseh-Jen Hsieh
  • Patent number: 10170286
    Abstract: An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. A source gas flow controller controls a flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas, forming carbon ions and atomic carbon. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. A hydrogen peroxide co-gas supply provides a predetermined concentration of hydrogen peroxide co-gas to the ion source chamber, and a hydrogen peroxide co-gas flow controller controls a flow of the hydrogen peroxide gas to the ion source chamber. The hydrogen peroxide co-gas decomposes within the ion source chamber and reacts with the atomic carbon from the molecular carbon source gas in the ion source chamber, forming hydrocarbons within the ion source chamber.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: January 1, 2019
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh
  • Publication number: 20180358202
    Abstract: An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.
    Type: Application
    Filed: August 14, 2018
    Publication date: December 13, 2018
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh, Paul B. Silverstein
  • Publication number: 20180346342
    Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. An arc chamber forms a plasma from the aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A hydrogen co-gas source further introduces a hydrogen co-gas to react residual aluminum iodide and iodide, where the reacted residual aluminum iodide and iodide is evacuated from the system.
    Type: Application
    Filed: June 1, 2018
    Publication date: December 6, 2018
    Inventors: Neil Colvin, Tseh-Jen Hsieh, Neil Basson
  • Patent number: 9984855
    Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: May 29, 2018
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh
  • Publication number: 20180144904
    Abstract: Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.
    Type: Application
    Filed: November 9, 2017
    Publication date: May 24, 2018
    Inventors: Neil Colvin, Tseh-Jen Hsieh
  • Publication number: 20180144940
    Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.
    Type: Application
    Filed: November 9, 2017
    Publication date: May 24, 2018
    Inventors: Neil Colvin, Tseh-Jen Hsieh