Patents by Inventor Tseh-Jen Hsieh

Tseh-Jen Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8779395
    Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.
    Type: Grant
    Filed: December 1, 2011
    Date of Patent: July 15, 2014
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh
  • Patent number: 8524584
    Abstract: Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.
    Type: Grant
    Filed: January 20, 2011
    Date of Patent: September 3, 2013
    Assignee: Axcelis Technologies, Inc.
    Inventors: William D. Lee, Daniel R. Tieger, Tseh-Jen Hsieh
  • Publication number: 20130140473
    Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.
    Type: Application
    Filed: December 1, 2011
    Publication date: June 6, 2013
    Applicant: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh
  • Publication number: 20120190181
    Abstract: Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece.
    Type: Application
    Filed: January 20, 2011
    Publication date: July 26, 2012
    Applicant: AXCELIS TECHNOLOGIES, INC.
    Inventors: WILLIAM D. LEE, DANIEL R. TIEGER, TSEH-JEN HSIEH
  • Publication number: 20120118232
    Abstract: A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.
    Type: Application
    Filed: November 17, 2010
    Publication date: May 17, 2012
    Applicant: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh
  • Publication number: 20120119113
    Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.
    Type: Application
    Filed: November 17, 2010
    Publication date: May 17, 2012
    Applicant: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh