Abstract: Within a method for forming a patterned polyimide layer, there is first provided a substrate. There is then formed over the substrate a blanket polyamic acid layer. There is then formed upon the blanket polyamic acid layer a patterned photoresist layer. There is then hardened the patterned photoresist layer to form a hardened patterned photoresist layer. There is then patterned, while employing the hardened patterned photoresist layer as an etch mask layer, the blanket polyamic acid layer to form a patterned polyamic acid layer. Finally, there is then thermally annealed the patterned polyamic acid layer to form a patterned polyimide layer. By employing as an etch mask when forming from the blanket polyamic acid layers the patterned polyamic acid layer the hardened patterned photoresist layer, rather than an unhardened patterned photoresist layer, the patterned polyamic acid layer, and consequently also the patterned polyimide layer, are formed with enhanced dimensional control.

Abstract: Within both a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is first provided a substrate. Within the method, there is then formed over the substrate a patterned bond pad layer. There is then formed over the patterned bond pad layer a barrier layer comprising: (1) a first titanium-tungsten alloy layer; (2) a titanium-tungsten alloy nitride layer formed upon the first titanium-tungsten alloy layer; and (3) a second titanium-tungsten alloy layer formed upon the titanium-tungsten alloy nitride layer. Finally, there is then formed upon the barrier layer a seed layer which comprises a titanium layer formed upon the barrier layer. The method contemplates a microelectronic fabrication fabricated employing the method. The barrier layer provides enhanced barrier properties within the microelectronic fabrication within which is formed the barrier layer.

Abstract: Within both a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is first provided a substrate. Within the method, there is then formed over the substrate a patterned bond pad layer. There is then formed over the patterned bond pad layer a barrier layer comprising: (1) a first titanium-tungsten alloy layer; (2) a titanium-tungsten alloy nitride layer formed upon the first titanium-tungsten alloy layer; and (3) a second titanium-tungsten alloy layer formed upon the titanium-tungsten alloy nitride layer. The method contemplates a microelectronic fabrication fabricated employing the method. The barrier layer provides enhanced barrier properties within the microelectronic fabrication within which is formed the barrier layer.

Abstract: Within a method for fabricating a microelectronic fabrication, and a microelectronic fabrication fabricated employing the method, there is first provided a substrate. Within the method, there is then formed over the substrate a patterned bond pad layer. There is also formed over the substrate a patterned passivation layer which passivates a series of edges of the patterned bond pad layer while leaving exposed a central portion of the patterned bond pad layer, where the patterned passivation layer has a series of protrusions within the patterned passivation layer over the series of edges of the patterned bond pad layer. There is then formed over the central portion of the patterned bond pad layer and bridging over the series of protrusions of the patterned passivation layer a first terminal electrode layer having an upper surface which is concave. Finally, there is then formed over the first terminal electrode layer a second terminal electrode layer having an upper surface which is other than concave.

Abstract: Within a method for forming a solder interconnection structure for use within a microelectronic fabrication, there is first provided a substrate having formed thereover a bond pad. There is then formed upon the bond pad a first solder interconnection layer. There is then formed over the first solder interconnection layer an annular solder non-wettable copper oxide layer which does not cover an upper dome portion of the first solder interconnection layer. There is then formed over the upper dome portion of the first solder interconnection layer and not upon the annular solder non-wettable copper oxide layer a second solder interconnection layer.

Abstract: Within a method for fabricating a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a patterned bond pad layer. There is also formed over the substrate and in electrical communication with the patterned bond pad layer a patterned redistribution layer, wherein the patterned redistribution layer is formed employing a plating method. The method is particularly economical for fabricating the microelectronic fabrication.

Abstract: Within a method for forming a solder interconnection structure for use within a microelectronic fabrication, there is first provided a substrate having formed thereover a bond pad. There is then formed upon the bond pad a first solder interconnection layer. There is then formed over the first solder interconnection layer an annular solder non-wettable copper oxide layer which does not cover an upper dome portion of the first solder interconnection layer. There is then formed over the upper dome portion of the first solder interconnection layer and not upon the annular solder non-wettable copper oxide layer a second solder interconnection layer.

Abstract: Within both a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing, the method, there is first provided a substrate. Within the method, there is then formed over the substrate a patterned bond pad layer. There is then formed over the patterned bond pad layer a barrier layer comprising: (1) a first titanium-tungsten alloy layer; (2) a titanium-tungsten alloy nitride layer formed upon the first titanium-tungsten alloy layer; and (3) a second titanium-tungsten alloy layer formed upon the titanium-tungsten alloy nitride layer. Finally, there is then formed upon the barrier layer a seed layer which comprises a titanium layer formed upon the barrier layer. The method contemplates a microelectronic fabrication fabricated employing the method. The barrier layer provides enhanced barrier properties within the microelectronic fabrication within which is formed the barrier layer.

Abstract: Within a method for forming a solder interconnection structure for use within a microelectronic fabrication, there is first provided a substrate having formed thereover a bond pad. There is then formed upon the bond pad a first solder interconnection layer. There is then formed over the first solder interconnection layer an annular solder non-wettable copper oxide layer which does not cover an upper dome portion of the first solder interconnection layer. There is then formed over the upper dome portion of the first solder interconnection layer and not upon the annular solder non-wettable copper oxide layer a second solder interconnection layer.

Abstract: The ball bump structure of the subject invention provides a hermetically sealed bond pad at the surface of a semiconductor chip. An adhesion pad is formed at the surface of the bond pad. The adhesion pad includes a barrier layer, preferably a titanium/tungsten alloy, and a bonding layer, for example, a sputtered gold layer. A gold ball bump is formed on the adhesion pad. Methods for forming the improved structure herein are also disclosed.

Abstract: A semiconductor device interconnect package assembly for TAB packages is disclosed having a central portion of material which is utilized as part of the package structure to provide scratch protection to the active surface of a semiconductor die and to the inner lead bonding areas. The central portion of material can be modified in various ways to improve the overall performance of the package, and to reduce stress generated in the TAB package due to thermal mismatch. The assembly also includes a plurality of apertures in the substrate film which overlap and expose a plurality of groups of inner lead portions. The plurality of apertures allows each group of exposed inner lead portions to be encapsulated independently from each other group. By encapsulating each of these groups separately, scratch protection is provided to the inner lead bonding areas while simultaneously reducing the stress on each of the leads due to the heating and cooling of the encapsulating material.

Abstract: Power and ground connections are provided using or more conductive layers provided in an integrated-circuit package design. A leadframe has either a tape assembly or a heat-conducting dielectric ceramic substrate attached to the die-attach paddle of the leadframe and one or more conductive planes are formed on the top surface of the tape assembly or the ceramic substrate. The tape assembly includes a conductive metal layer, a polyimide layer, and an adhesive layer. The metal layer on the tape or ceramic substrate and the metal die-attach pad of the leadframe are used as low inductance power planes providing connections to the integrated-circuit. No vias are used. Use of a metal die-attach paddle for the leadframe is optional when a ceramic substrate is used.

Abstract: A process for fabricating conductive bumps on the bond pads of yielded good die includes forming a transparent structure upon which a masking layer is formed, aligning yielded good die and attaching them to the masking layer, and attaching a backing material to the backside of the die for mechanical support. The transparent structure is then removed and fabrication of the bumps continued on the bond pads of the good die by conventional means.

Abstract: A high gain Josephson junction logic circuit is provided. The novel circuit comprises a high gain non-linear threshold input Josephson junction logic circuit which is coupled to a high gain Josephson junction amplifier. The high gain input circuit provides the capability of driving a larger number of output circuits or employing a larger number of input signals.

Abstract: A superconductive Josephson junction high density memory array is provided. Each memory cell in the array comprises a two branch superconducting interferometer storage loop which has only a single Josephson junction device in one of the branches. The Josephson junction devices are mounted on a substrate having a patterned ground plane. The ground plane pattern is provided with holes or apertures which surround the Josephson junction devices so that the control current of the control lines couple with the tunnel junctions of the Josephson junction devices but not with the ground plane. This structural arrangement provides a threshold characteristic for the single Josephson junction device which is symmetrical to the gate current, thus, may be easily switched to two current states indicative of two logic states.

Abstract: A Josephson junction latch circuit is provided which has an AND gate having plural inputs and a single output. The output of the single AND gate is directly coupled to a Josephson junction flux storage loop capable of storing flux indicative of the output of the AND gate. A Josephson junction sense line is provided capable of sensing the flux condition of the flux storage loop. The sense line is directly coupled to amplifying gates which produce amplified true and complement quantities whenever the sense line is actuated.

Abstract: A single Josephson junction device is arranged in a single branch which comprises an external source resistor connected in series with an output resistor and a Josephson junction device. An input node and an input resistor are in series and connected to the node between the output resistor and the Josephson junction device. Voltage signals applied to the input voltage node are amplified by connecting a high gain voltage output in parallel with the output resistor and providing sensing means for sensing the voltage output across the output resistor only when the Josephson junction device is switching from its low impedance state to its high impedance state.

Abstract: During the manufacture of Josephson superconducting devices, it is necessary to provide on a substrate a base electrode, a counter electrode and a small tunnel barrier area therebetween. A novel method of making all three of these active elements in the same vacuum chamber without having to remove the substrate from the vacuum chamber is provided so that the tunnel barrier area is accurately made to a predetermined size and without the danger of contamination. The novel structure is made as a substantially planarized laminate in the vacuum chamber and the tunnel barrier area is defined in a supplemental step.

Abstract: A Josephson junction AND gate logic circuit is provided which has an enhanced and improved operating window area. The circuit comprises two parallel branches one for the input and one for the output connected between a biasing current source and a ground or reference voltage. The input branch is provided with a first branch resistor, a third Josephson junction and an interferometer in series between the current source and ground. A plurality of input gate signal lines connects to the interferometer and a sink resistor is connected in parallel with the interferometer. When the input current signals collectively exceed a predetermined level, the two Josephson junctions in the interferometer switch ON and assume the high impedance state. The input current and biasing current is diverted into the output branch causing the second Josephson junction in the output branch to switch ON.

Abstract: A two branch, three Josephson junction gating circuit is provided with a plurality of inputs to enable the circuit to be operated as a high-gain logic OR gate. The circuit is arranged to provide a larger operating window area and to provide an improved and optimized gain characteristic by selectively switching ON the Josephson junctions in the circuit.