Patents by Inventor Tsu-Hsiu Perng
Tsu-Hsiu Perng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210280473Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.Type: ApplicationFiled: May 7, 2021Publication date: September 9, 2021Inventors: Tsu-Hsiu Perng, Kai-Chieh Yang, Zhi-Chang Lin, Teng-Chun Tsai, Wei-Hao Wu
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Publication number: 20210225762Abstract: The present disclosure provides an interconnect structure, including a substrate having a conductive region adjacent to a gate region, a contact over the conductive region, a first interlayer dielectric layer (ILD) surrounding the contact, a via over the contact, a first densified dielectric layer surrounding the via, wherein the densified dielectric layer has a first density, and a second ILD layer over the first ILD layer and surrounding the via, wherein the second ILD layer has a second density, the first density is greater than a second density.Type: ApplicationFiled: May 27, 2020Publication date: July 22, 2021Inventors: KHADERBAD MRUNAL ABHIJITH, YU-YUN PENG, FU-TING YEN, CHEN-HAN WANG, TSU-HSIU PERNG, KENG-CHU LIN
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Patent number: 11069558Abstract: An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.Type: GrantFiled: December 13, 2019Date of Patent: July 20, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chin-Hsiang Lin, Keng-Chu Lin, Shwang-Ming Jeng, Teng-Chun Tsai, Tsu-Hsiu Perng, Fu-Ting Yen
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Publication number: 20210202735Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.Type: ApplicationFiled: March 15, 2021Publication date: July 1, 2021Inventors: Yu-Yun Peng, Fu-Ting Yen, Ting-Ting Chen, Keng-Chu Lin, Tsu-Hsiu Perng
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Publication number: 20210118748Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.Type: ApplicationFiled: December 7, 2020Publication date: April 22, 2021Inventors: Tsu-Hsiu Perng, Kai-Chieh Yang, Zhi-Chang Lin, Teng-Chun Tsai, Wei-Hao Wu
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Publication number: 20210083091Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.Type: ApplicationFiled: September 17, 2019Publication date: March 18, 2021Inventors: Yu-Yun Peng, Fu-Ting Yen, Ting-Ting Chen, Keng-Chu Lin, Tsu-Hsiu Perng
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Patent number: 10950731Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.Type: GrantFiled: September 17, 2019Date of Patent: March 16, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Yun Peng, Fu-Ting Yen, Ting-Ting Chen, Keng-Chu Lin, Tsu-Hsiu Perng
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Patent number: 10861752Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.Type: GrantFiled: October 2, 2019Date of Patent: December 8, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsu-Hsiu Perng, Kai-Chieh Yang, Zhi-Chang Lin, Teng-Chun Tsai, Wei-Hao Wu
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Patent number: 10685867Abstract: A method of semiconductor device fabrication includes providing a substrate having a hardmask layer thereover. The hardmask layer is patterned to expose the substrate. The substrate is etched through the patterned hardmask layer to form a first fin element and a second fin element extending from the substrate. An isolation feature between the first and second fin elements is formed, where the isolation feature has a first etch rate in a first solution. A laser anneal process is performed to irradiate the isolation feature with a pulsed laser beam. A pulse duration of the pulsed laser beam is adjusted based on a height of the isolation feature. The isolation feature after performing the laser anneal process has a second etch rate less than the first etch rate in the first solution.Type: GrantFiled: October 29, 2018Date of Patent: June 16, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: De-Wei Yu, Tsu-Hsiu Perng, Ziwei Fang
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Publication number: 20200118867Abstract: An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.Type: ApplicationFiled: December 13, 2019Publication date: April 16, 2020Inventors: Chin-Hsiang Lin, Keng-Chu Lin, Shwang-Ming Jeng, Teng-Chun Tsai, Tsu-Hsiu Perng, Fu-Ting Yen
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Publication number: 20200083109Abstract: A cut-last process for cutting fin segments of a FinFET structure on a substrate utilizes a two-step process. After the fins are formed, an oxide material is deposited in the trenches of the FinFET structure. The oxide material can be an STI oxide or a low-stress dummy gapfill material. A fin segment can be removed by an etchant and can leave a concave shaped (such as a u-shape or v-shape) portion of silicon at the bottom of the fin. Where the oxide material is an STI oxide, the void left by removing the fin can be filled with replacement STI oxide. Where the oxide material is a dummy gapfill material, the dummy gapfill material can be removed and replaced with an STI oxide or converted to an STI oxide and filled with replacement STI oxide before or after the conversion.Type: ApplicationFiled: November 15, 2019Publication date: March 12, 2020Inventors: Yen-Chun Huang, Chih-Tang Peng, Kuang-Yuan Hsu, Tai-Chun Huang, Tsu-Hsiu Perng, Tien-I Bao
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Publication number: 20200035566Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.Type: ApplicationFiled: October 2, 2019Publication date: January 30, 2020Inventors: Tsu-Hsiu Perng, Kai-Chieh Yang, Zhi-Chang Lin, Teng-Chun Tsai, Wei-Hao Wu
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Patent number: 10510580Abstract: An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.Type: GrantFiled: August 16, 2018Date of Patent: December 17, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chin-Hsiang Lin, Keng-Chu Lin, Shwang-Ming Jeng, Teng-Chun Tsai, Tsu-Hsiu Perng, Fu-Ting Yen
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Patent number: 10490458Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.Type: GrantFiled: January 2, 2018Date of Patent: November 26, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsu-Hsiu Perng, Kai-Chieh Yang, Zhi-Chang Lin, Teng-Chun Tsai, Wei-Hao Wu
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Patent number: 10483169Abstract: A cut-last process for cutting fin segments of a FinFET structure on a substrate utilizes a two-step process. After the fins are formed, an oxide material is deposited in the trenches of the FinFET structure. The oxide material can be an STI oxide or a low-stress dummy gapfill material. A fin segment can be removed by an etchant and can leave a concave shaped (such as a u-shape or v-shape) portion of silicon at the bottom of the fin. Where the oxide material is an STI oxide, the void left by removing the fin can be filled with replacement STI oxide. Where the oxide material is a dummy gapfill material, the dummy gapfill material can be removed and replaced with an STI oxide or converted to an STI oxide and filled with replacement STI oxide before or after the conversion.Type: GrantFiled: September 29, 2016Date of Patent: November 19, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Chun Huang, Chih-Tang Peng, Kuang-Yuan Hsu, Tai-Chun Huang, Tsu-Hsiu Perng, Tien-I Bao
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Publication number: 20190103304Abstract: An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.Type: ApplicationFiled: August 16, 2018Publication date: April 4, 2019Inventors: Chin-Hsiang Lin, Keng-Chu Lin, Shwang-Ming Jeng, Teng-Chun Tsai, Tsu-Hsiu Perng, Fu-Ting Yen
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Publication number: 20190103323Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.Type: ApplicationFiled: January 2, 2018Publication date: April 4, 2019Inventors: Tsu-Hsiu Perng, Kai-Chieh Yang, Zhi-Chang Lin, Teng-Chun Tsai, Wei-Hao Wu
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Publication number: 20190103324Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.Type: ApplicationFiled: November 30, 2018Publication date: April 4, 2019Inventors: Tsu-Hsiu Perng, Kai-Chieh Yang, Zhi-Chang Lin, Teng-Chun Tsai, Wei-Hao Wu
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Publication number: 20190067083Abstract: A method of semiconductor device fabrication includes providing a substrate having a hardmask layer thereover. The hardmask layer is patterned to expose the substrate. The substrate is etched through the patterned hardmask layer to form a first fin element and a second fin element extending from the substrate. An isolation feature between the first and second fin elements is formed, where the isolation feature has a first etch rate in a first solution. A laser anneal process is performed to irradiate the isolation feature with a pulsed laser beam. A pulse duration of the pulsed laser beam is adjusted based on a height of the isolation feature. The isolation feature after performing the laser anneal process has a second etch rate less than the first etch rate in the first solution.Type: ApplicationFiled: October 29, 2018Publication date: February 28, 2019Inventors: De-Wei YU, Tsu-Hsiu PERNG, Ziwei FANG
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Patent number: 10115624Abstract: A method of semiconductor device fabrication includes providing a substrate having a hardmask layer thereover. The hardmask layer is patterned to expose the substrate. The substrate is etched through the patterned hardmask layer to form a first fin element and a second fin element extending from the substrate. An isolation feature between the first and second fin elements is formed, where the isolation feature has a first etch rate in a first solution. A laser anneal process is performed to irradiate the isolation feature with a pulsed laser beam. A pulse duration of the pulsed laser beam is adjusted based on a height of the isolation feature. The isolation feature after performing the laser anneal process has a second etch rate less than the first etch rate in the first solution.Type: GrantFiled: June 30, 2016Date of Patent: October 30, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: De-Wei Yu, Tsu-Hsiu Perng, Ziwei Fang