Abstract: A vaporizing apparatus has a vaporizing container into which a liquid raw material is introduced and which is made of metal, a heater for heating the vaporizing container to vaporize liquid introduced into the vaporizing container and a metal nozzle (an electrode) disposed in the vaporizing container in such a manner that the nozzle is electrically insulated from the vaporizing container. Moreover, the vaporizing apparatus has a cleaning-solution supply apparatus for supplying, to the inside portion of the vaporizing container, a cleaning solution for solving residues generated in the vaporizing container and a plasma generating power source for supplying high-frequency electric power to a position between the nozzle and the vaporizing container to generate plasma in the vaporizing container by using the vaporized cleaning solution.

Abstract: Disclosed is a specific identification method of an MRSA and MRC-NS, which is speedy, simple and reliable. Specifically, the present invention provides a diagnostic method of an MRSA or MRC-NS, which comprises performing a reaction with a sample by making combined use of a part of a mecDNA, which is an integrated adventitious DNA existing on a chromosome of the MRSA or MRC-NS and carrying an mecA gene thereon, and a part of a nucleotide sequence of a chromosomal DNA surrounding the integrated DNA; and also a diagnostic method of an MRSA or MRC-NS by PCR, LCR or hybridization, which comprises performing a reaction with a sample by using a nucleotide sequence of a chromosomal DNA surrounding an integrated site of a mecDNA in a chromosome of an MSSA or MSC-NS, wherein said method makes use of an occurrence of a negative reaction when said sample contains a mecDNA integrated therein.

Abstract: A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.