Patents by Inventor Tsukasa Hirayama

Tsukasa Hirayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220310361
    Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film and a mask formed on the etching target film and having an opening; (b) forming a first layer containing a nitrogen atom and a hydrogen atom by using a first processing gas, on a side wall of a recess that is formed in the etching target film corresponding to the opening; (c) after (b), modifying the first layer into a second layer by using a second processing gas containing a halogen-containing gas; and (d) after (c), etching the recess by using a third processing gas.
    Type: Application
    Filed: March 25, 2022
    Publication date: September 29, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tsukasa HIRAYAMA, Taku GOHIRA
  • Patent number: 11309194
    Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: April 19, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Koji Tanaka, Toshiyuki Shiokawa, Koji Yamashita, Hiroyuki Masutomi, Hitoshi Kosugi, Takao Inada, Takashi Ikeda, Tsukasa Hirayama
  • Publication number: 20210335621
    Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
    Type: Application
    Filed: July 6, 2021
    Publication date: October 28, 2021
    Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
  • Patent number: 11087992
    Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
    Type: Grant
    Filed: January 31, 2020
    Date of Patent: August 10, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
  • Patent number: 11062922
    Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: July 13, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takashi Nagai, Hideaki Sato, Hiromi Hara, Hiroshi Yoshida, Tsukasa Hirayama
  • Publication number: 20200251343
    Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
    Type: Application
    Filed: January 31, 2020
    Publication date: August 6, 2020
    Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
  • Patent number: 10643874
    Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: May 5, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Tanaka, Tsukasa Hirayama, Takao Inada
  • Patent number: 10303082
    Abstract: An image forming apparatus executes an image formation process through which a developer image is formed on an image carrier by developing an electrostatic latent image while rotating a developer carrier in a forward direction, a voltage controller controls development and regulating voltages after the image formation process such that a magnitude relationship between the development regulating voltages becomes inverted from that during the image formation process, and after finishing the image formation process, in a state where the magnitude relationship between the development and regulating voltages is inverted from that during the image formation, the drive controller rotates the developer carrier in the forward direction for a prescribed period, and afterwards rotates the developer carrier in a reverse direction for another prescribed period.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: May 28, 2019
    Assignee: Oki Data Corporation
    Inventors: Fumitaka Ozeki, Takuya Goto, Kentaro Hasegawa, Susumu Yamamoto, Kazuoki Katayama, Tsukasa Hirayama, Hisashi Soga
  • Publication number: 20180247841
    Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.
    Type: Application
    Filed: February 27, 2018
    Publication date: August 30, 2018
    Inventors: Takashi Nagai, Hideaki Sato, Hiromi Hara, Hiroshi Yoshida, Tsukasa Hirayama
  • Publication number: 20180218924
    Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.
    Type: Application
    Filed: January 30, 2018
    Publication date: August 2, 2018
    Applicant: Tokyo Electron Limited
    Inventors: Koji TANAKA, Toshiyuki SHIOKAWA, Koji YAMASHITA, Hiroyuki MASUTOMI, Hitoshi KOSUGI, Takao INADA, Takashi IKEDA, Tsukasa HIRAYAMA
  • Publication number: 20180113397
    Abstract: An image forming apparatus executes an image formation process through which a developer image is formed on an image carrier by developing an electrostatic latent image while rotating a developer carrier in a forward direction, a voltage controller controls development and regulating voltages after the image formation process such that a magnitude relationship between the development regulating voltages becomes inverted from that during the image formation process, and after finishing the image formation process, in a state where the magnitude relationship between the development and regulating voltages is inverted from that during the image formation, the drive controller rotates the developer carrier in the forward direction for a prescribed period, and afterwards rotates the developer carrier in a reverse direction for another prescribed period.
    Type: Application
    Filed: October 18, 2017
    Publication date: April 26, 2018
    Inventors: Fumitaka OZEKI, Takuya GOTO, Kentaro HASEGAWA, Susumu YAMAMOTO, Kazuoki KATAYAMA, Tsukasa HIRAYAMA, Hisashi SOGA
  • Publication number: 20170358470
    Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.
    Type: Application
    Filed: June 8, 2017
    Publication date: December 14, 2017
    Inventors: Hiroshi Tanaka, Tsukasa Hirayama, Takao Inada
  • Patent number: 9721813
    Abstract: The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: August 1, 2017
    Assignee: Tokyo Electron Limited
    Inventors: Nobuhiro Ogata, Hiromi Kiyose, Hidetsugu Yano, Tsukasa Hirayama
  • Patent number: 9321085
    Abstract: A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: April 26, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Teruomi Minami, Satoru Tanaka, Tatsuya Nagamatsu, Hiroyuki Suzuki, Yosuke Kawabuchi, Tsukasa Hirayama, Katsufumi Matsuki
  • Patent number: 8927461
    Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: January 6, 2015
    Assignees: International Superconductivity Technology Center, Furukawa Electric Co., Ltd., Japan Fine Ceramics Center
    Inventors: Seiki Miyata, Hiroyuki Fukushima, Reiji Kuriki, Akira Ibi, Masateru Yoshizumi, Akio Kinoshita, Yutaka Yamada, Yuh Shiohara, Ryuji Yoshida, Takeharu Kato, Tsukasa Hirayama
  • Publication number: 20140014134
    Abstract: The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.
    Type: Application
    Filed: July 9, 2013
    Publication date: January 16, 2014
    Inventors: Nobuhiro Ogata, Hiromi Kiyose, Hidetsugu Yano, Tsukasa Hirayama
  • Publication number: 20110218113
    Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.
    Type: Application
    Filed: May 20, 2011
    Publication date: September 8, 2011
    Applicants: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, FURUKAWA ELECTRIC CO., LTD, JAPAN FINE CERAMICS CENTER
    Inventors: Seiki Miyata, Hiroyuki Fukushima, Reiji Kuriki, Akira Ibi, Masateru Yoshizumi, Akio Kinoshita, Yutaka Yamada, Yuh Shiohara, Ryuji Yoshida, Takeharu Kato, Tsukasa Hirayama
  • Patent number: 7581335
    Abstract: The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.
    Type: Grant
    Filed: November 8, 2006
    Date of Patent: September 1, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Tanaka, Hidetoshi Nakao, Naoki Shindo, Atushi Yamashita, Tsukasa Hirayama, Kotaro Tsurusaki
  • Publication number: 20070113423
    Abstract: The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.
    Type: Application
    Filed: November 8, 2006
    Publication date: May 24, 2007
    Inventors: Hiroshi Tanaka, Hidetoshi Nakao, Naoki Shindo, Atushi Yamashita, Tsukasa Hirayama, Kotaro Tsurusaki
  • Publication number: 20060166831
    Abstract: The invention relates to a technique for forming a thin film of good quality on a base substance via an intermediate layer. Such a film formation technique is suitably applicable to formation of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. In the method of forming a thin film on a base substance via an intermediate layer, an interface energy Ea at an interface A between the base substance and the intermediate layer, an interface energy Eb at an interface B between the intermediate layer and the thin film, and an interface energy Ec at an interface C between the base substance and the thin film in a state where the intermediate layer is omitted are calculated, and then a substance for the intermediate layer is selected so as to satisfy conditions of Ea<Ec and Eb<Ec.
    Type: Application
    Filed: October 29, 2003
    Publication date: July 27, 2006
    Applicants: Sumitomo Electric Industries, Ltd., International Superconductivity Technology center, the Juridical Foundation
    Inventors: Katsuya Hasegawa, Teruo Izumi, Yuh Shiohara, Yoshihiro Sugawara, Tsukasa Hirayama, Fumiyasu Oba, Yuichi Ikuhara