Patents by Inventor Tsukasa Hirayama
Tsukasa Hirayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038501Abstract: A substrate etching method performed by using a plasma processing apparatus includes: providing a substrate including a silicon-containing film to a substrate support; periodically supplying, to the substrate support, bias RF power of 20 kW to 50 kW at a duty ratio of 5% to 50%; and etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gasType: ApplicationFiled: October 13, 2023Publication date: February 1, 2024Applicant: Tokyo Electron LimitedInventors: Akira NAKAGAWA, Kenji KOMATSU, Kazuma KAMIMURA, Tsukasa HIRAYAMA
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Publication number: 20220310361Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film and a mask formed on the etching target film and having an opening; (b) forming a first layer containing a nitrogen atom and a hydrogen atom by using a first processing gas, on a side wall of a recess that is formed in the etching target film corresponding to the opening; (c) after (b), modifying the first layer into a second layer by using a second processing gas containing a halogen-containing gas; and (d) after (c), etching the recess by using a third processing gas.Type: ApplicationFiled: March 25, 2022Publication date: September 29, 2022Applicant: TOKYO ELECTRON LIMITEDInventors: Tsukasa HIRAYAMA, Taku GOHIRA
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Patent number: 11309194Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.Type: GrantFiled: January 30, 2018Date of Patent: April 19, 2022Assignee: Tokyo Electron LimitedInventors: Koji Tanaka, Toshiyuki Shiokawa, Koji Yamashita, Hiroyuki Masutomi, Hitoshi Kosugi, Takao Inada, Takashi Ikeda, Tsukasa Hirayama
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Publication number: 20210335621Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: ApplicationFiled: July 6, 2021Publication date: October 28, 2021Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Patent number: 11087992Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: GrantFiled: January 31, 2020Date of Patent: August 10, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Patent number: 11062922Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.Type: GrantFiled: February 27, 2018Date of Patent: July 13, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Nagai, Hideaki Sato, Hiromi Hara, Hiroshi Yoshida, Tsukasa Hirayama
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Publication number: 20200251343Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.Type: ApplicationFiled: January 31, 2020Publication date: August 6, 2020Inventors: Tsukasa Hirayama, Takao Inada, Hironobu Hyakutake, Kazuya Koyama, Hisashi Kawano
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Patent number: 10643874Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.Type: GrantFiled: June 8, 2017Date of Patent: May 5, 2020Assignee: Tokyo Electron LimitedInventors: Hiroshi Tanaka, Tsukasa Hirayama, Takao Inada
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Patent number: 10303082Abstract: An image forming apparatus executes an image formation process through which a developer image is formed on an image carrier by developing an electrostatic latent image while rotating a developer carrier in a forward direction, a voltage controller controls development and regulating voltages after the image formation process such that a magnitude relationship between the development regulating voltages becomes inverted from that during the image formation process, and after finishing the image formation process, in a state where the magnitude relationship between the development and regulating voltages is inverted from that during the image formation, the drive controller rotates the developer carrier in the forward direction for a prescribed period, and afterwards rotates the developer carrier in a reverse direction for another prescribed period.Type: GrantFiled: October 18, 2017Date of Patent: May 28, 2019Assignee: Oki Data CorporationInventors: Fumitaka Ozeki, Takuya Goto, Kentaro Hasegawa, Susumu Yamamoto, Kazuoki Katayama, Tsukasa Hirayama, Hisashi Soga
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Publication number: 20180247841Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.Type: ApplicationFiled: February 27, 2018Publication date: August 30, 2018Inventors: Takashi Nagai, Hideaki Sato, Hiromi Hara, Hiroshi Yoshida, Tsukasa Hirayama
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Publication number: 20180218924Abstract: A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.Type: ApplicationFiled: January 30, 2018Publication date: August 2, 2018Applicant: Tokyo Electron LimitedInventors: Koji TANAKA, Toshiyuki SHIOKAWA, Koji YAMASHITA, Hiroyuki MASUTOMI, Hitoshi KOSUGI, Takao INADA, Takashi IKEDA, Tsukasa HIRAYAMA
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Publication number: 20180113397Abstract: An image forming apparatus executes an image formation process through which a developer image is formed on an image carrier by developing an electrostatic latent image while rotating a developer carrier in a forward direction, a voltage controller controls development and regulating voltages after the image formation process such that a magnitude relationship between the development regulating voltages becomes inverted from that during the image formation process, and after finishing the image formation process, in a state where the magnitude relationship between the development and regulating voltages is inverted from that during the image formation, the drive controller rotates the developer carrier in the forward direction for a prescribed period, and afterwards rotates the developer carrier in a reverse direction for another prescribed period.Type: ApplicationFiled: October 18, 2017Publication date: April 26, 2018Inventors: Fumitaka OZEKI, Takuya GOTO, Kentaro HASEGAWA, Susumu YAMAMOTO, Kazuoki KATAYAMA, Tsukasa HIRAYAMA, Hisashi SOGA
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Publication number: 20170358470Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.Type: ApplicationFiled: June 8, 2017Publication date: December 14, 2017Inventors: Hiroshi Tanaka, Tsukasa Hirayama, Takao Inada
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Patent number: 9721813Abstract: The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.Type: GrantFiled: July 9, 2013Date of Patent: August 1, 2017Assignee: Tokyo Electron LimitedInventors: Nobuhiro Ogata, Hiromi Kiyose, Hidetsugu Yano, Tsukasa Hirayama
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Patent number: 9321085Abstract: A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.Type: GrantFiled: November 28, 2012Date of Patent: April 26, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Teruomi Minami, Satoru Tanaka, Tatsuya Nagamatsu, Hiroyuki Suzuki, Yosuke Kawabuchi, Tsukasa Hirayama, Katsufumi Matsuki
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Patent number: 8927461Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.Type: GrantFiled: May 20, 2011Date of Patent: January 6, 2015Assignees: International Superconductivity Technology Center, Furukawa Electric Co., Ltd., Japan Fine Ceramics CenterInventors: Seiki Miyata, Hiroyuki Fukushima, Reiji Kuriki, Akira Ibi, Masateru Yoshizumi, Akio Kinoshita, Yutaka Yamada, Yuh Shiohara, Ryuji Yoshida, Takeharu Kato, Tsukasa Hirayama
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Publication number: 20140014134Abstract: The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.Type: ApplicationFiled: July 9, 2013Publication date: January 16, 2014Inventors: Nobuhiro Ogata, Hiromi Kiyose, Hidetsugu Yano, Tsukasa Hirayama
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Publication number: 20110218113Abstract: Provided is a substrate for superconductive film formation, which includes a metal substrate, and an oxide layer formed directly on the metal substrate, containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm. A method of manufacturing a substrate for superconductive film formation, which includes forming an oxide layer directly on a metal substrate, the oxide layer containing chromium oxide as a major component and having a thickness of 10-300 nm and an arithmetic average roughness Ra of not more than 50 nm.Type: ApplicationFiled: May 20, 2011Publication date: September 8, 2011Applicants: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER, FURUKAWA ELECTRIC CO., LTD, JAPAN FINE CERAMICS CENTERInventors: Seiki Miyata, Hiroyuki Fukushima, Reiji Kuriki, Akira Ibi, Masateru Yoshizumi, Akio Kinoshita, Yutaka Yamada, Yuh Shiohara, Ryuji Yoshida, Takeharu Kato, Tsukasa Hirayama
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Patent number: 7581335Abstract: The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.Type: GrantFiled: November 8, 2006Date of Patent: September 1, 2009Assignee: Tokyo Electron LimitedInventors: Hiroshi Tanaka, Hidetoshi Nakao, Naoki Shindo, Atushi Yamashita, Tsukasa Hirayama, Kotaro Tsurusaki
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Publication number: 20070113423Abstract: The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.Type: ApplicationFiled: November 8, 2006Publication date: May 24, 2007Inventors: Hiroshi Tanaka, Hidetoshi Nakao, Naoki Shindo, Atushi Yamashita, Tsukasa Hirayama, Kotaro Tsurusaki