Patents by Inventor Tsukasa Hirayama

Tsukasa Hirayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060166831
    Abstract: The invention relates to a technique for forming a thin film of good quality on a base substance via an intermediate layer. Such a film formation technique is suitably applicable to formation of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. In the method of forming a thin film on a base substance via an intermediate layer, an interface energy Ea at an interface A between the base substance and the intermediate layer, an interface energy Eb at an interface B between the intermediate layer and the thin film, and an interface energy Ec at an interface C between the base substance and the thin film in a state where the intermediate layer is omitted are calculated, and then a substance for the intermediate layer is selected so as to satisfy conditions of Ea<Ec and Eb<Ec.
    Type: Application
    Filed: October 29, 2003
    Publication date: July 27, 2006
    Applicants: Sumitomo Electric Industries, Ltd., International Superconductivity Technology center, the Juridical Foundation
    Inventors: Katsuya Hasegawa, Teruo Izumi, Yuh Shiohara, Yoshihiro Sugawara, Tsukasa Hirayama, Fumiyasu Oba, Yuichi Ikuhara
  • Publication number: 20060009362
    Abstract: The invention relates to a technique for forming a single crystalline thin film of good quality on an underlayer. Such a technique is suitably applicable to provision of an oxide high-temperature superconductor thin film usable for a superconducting wire material, a superconducting device or the like. The single crystalline thin film formed on a substratum is made of a substance different from that of the substratum. A specific atomic layer contained in common in the substratum and the thin film is shared at an interface between the substratum and the thin film. In a region as adjacent to the interface as 100 or fewer unit cells of the thin film apart from the interface, a ratio of crystalline region having grown with an orientation of ±2 degrees or less deviation angle on the basis of a crystal orientation of the substratum is 50% or more.
    Type: Application
    Filed: October 29, 2003
    Publication date: January 12, 2006
    Inventors: Katsuya Hasegawa, Teruo Izumi, Yuh Shiohara, Yoshihiro Sugawara, Tsukasa Hirayama, Fumiyasu Oba, Yuichi Ikuhara
  • Patent number: 4662911
    Abstract: The invention relates to a trap for automotive exhaust particulates, with a high trapping efficiency and a low pressure loss for exhaust gas passage. The trap is a honeycomb-type filter with a three-dimensional network skelton. Further, provision of a ceramic incinerator comprising a heater in front of the honeycomb filter makes it easy to incinerate trapped particulates for removal.
    Type: Grant
    Filed: April 22, 1985
    Date of Patent: May 5, 1987
    Assignee: Nippondenso Co., Ltd.
    Inventors: Tsukasa Hirayama, Yukihisa Takeuchi, Yasunao Miura