Abstract: An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided.

Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

Abstract: [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell. [Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

Abstract: A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face to which light emitted from the light emitting layer is incident, and convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light. The diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction. The semiconductor stack part is formed on the diffractive face. The convex portions or the concave portions include a side surface and a curved portion which curves and extends to a center side of the convex portions or the concave portions from an upper end of the side surface.

Abstract: A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

Abstract: [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell. [Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

Abstract: [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate. [MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.