Abstract: A patterning process, including steps of: forming the first resist film from the first resist material containing a thermosetting compound having a hydroxy group and/or a carboxy group each protected by an acid-labile group, an acid generator, and a sensitizer; irradiating the first resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion; forming the second resist film from second resist material containing (A) metal compound on the first resist film, and forming a crosslinked portion wherein the component (A) and deprotected hydroxy group and/or deprotected carboxy group are crosslinked on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

Abstract: An emulsion-type cosmetic composition contains from 3 to 50% by mass of an oil-soluble UV absorber, and from 0.2 to 20% by mass of a powder containing a polymer powder. An average IOB value of a monomer or monomers constituting the polymer powder is from 1 to 10.

Abstract: A wheel bearing device (1) provided with an outer sealing member (7) in which: a core metal (8) having formed therein multiple seal lips is fitted to the outer opening of an outer ring (2); a metal ring (9) is fitted to the outer peripheral section of a hub ring (3) so as to oppose the core metal. The multiple seal lips are brought into contact with the metal ring, so that a portion between the outer ring and the hub ring is sealed. An annular outer member side weir part (11f) that protrudes to the outer side, in a radial direction, as compared to the outer edge of the metal ring so as to surround the metal ring is provided to the core metal, and an outer member side expanded-diameter part (8g) that holds grease is formed in the inner peripheral surface of the outer member side weir part.

Abstract: An oil-in-water type emulsion cosmetic exhibits a high-level sunscreen effect and has a low viscosity and a high stability and is easy to use. The oil-in-water type emulsion cosmetic includes (A) an agar microgel, (B) one or more kinds of powders selected from (b1) a clay mineral powder and (b2) a highly oil-absorbing spherical powder, (C) a polyoxyethylene-hardened castor oil having an HLB value of 10-17; (D) an oil-soluble UV absorber, (E) 0.01-0.13 mass % of an (acrylate/alkyl acrylate (C10-30)) cross polymer, and (F) 0-0.5 mass % of a UV scattering agent, and is characterized in that the viscosity at 25° C. is not higher than 10,000 mPa·s.

Abstract: The present invention is a resist material containing: (i) a compound (i-1), which is a (partial) condensate or a (partial) hydrolysis-condensate of a metal compound shown by the following general formula (A-1), or a compound (i-2), which is a reaction product of the compound (i-1) and a dihydric or trihydric alcohol shown by the following general formula (A-2), (ii) a photo-acid generator, (iii) a basic compound, and (iv) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.

Abstract: The present invention is a resist material containing: (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.

Abstract: A method for measuring a distance of diffusion of a curing catalyst for a thermosetting silicon-containing material includes the steps of: forming a silicon-containing film from a composition containing a thermosetting silicon-containing material, a curing catalyst and a solvent; coating the silicon-containing film with a photosensitive resin composition containing a resin whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent, and subsequently heating to prepare a substrate on which the silicon-containing film and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin.

Abstract: The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

Abstract: An oil-in-water type emulsion cosmetic exhibits a high-level sunscreen effect and has a low viscosity and a high stability and is easy to use. The oil-in-water type emulsion cosmetic includes (A) an agar microgel, (B) one or more kinds of powders selected from (b1) a clay mineral powder and (b2) a highly oil-absorbing spherical powder, (C) a polyoxyethylene-hardened castor oil having an HLB value of 10-17; (D) an oil-soluble UV absorber, (E) 0.01-0.13 mass % of an (acrylate/alkyl acrylate (C10-30)) cross polymer, and (F) 0-0.5 mass % of a UV scattering agent, and is characterized in that the viscosity at 25° C. is not higher than 10,000 mPa·s.

Abstract: A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R103 represents linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with sulfur atom in the formula; and L104 represents a single bond or linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by hetero-atom.

Abstract: The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Abstract: A method for producing a silicon compound containing an iodophenyl group, including substituting iodine for a trialkylsilyl ((R0)3Si) group bonded to a phenyl group by using an iodine-containing electrophilic reagent (I-X) as shown by the following reaction equation: where all of R0's may be identical to or different from each other and each represent an alkyl group having 1 to 6 carbon atoms; R1 represents a single bond or a divalent organic group; R2 represents an organic group having 1 to 10 carbon atoms; R3 represents an organic group having 1 to 10 carbon atoms; R represents an organic group having 1 to 6 carbon atoms; n0 is 1, 2, or 3, n1 is 1, 2, or 3, n2 is 0, 1, or 2, and n3 is 0, 1, or 2, provided that 1?n1+n3?3; and X represents a counter substituent of iodine, acting as an electrophilic reactive species.

Abstract: A patterning process, including: forming the first resist film from first resist material containing an acid generator and thermosetting compound having a hydroxy group and/or carboxy group protected by an acid-labile group; forming the second resist film on first resist film from a second resist material containing a metal compound (A) and a sensitizer; irradiating the first and second resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion of first resist film and to form a crosslinked portion of the component (A) with the deprotected hydroxy and/or carboxy group on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

Abstract: A patterning process, including steps of: forming the first resist film from the first resist material containing a thermosetting compound having a hydroxy group and/or a carboxy group each protected by an acid-labile group, an acid generator, and a sensitizer; irradiating the first resist film with a high energy beam or an electron beam to perform pattern exposure to deprotect the hydroxy group and/or carboxy group in a pattern exposed portion; forming the second resist film from second resist material containing (A) metal compound on the first resist film, and forming a crosslinked portion wherein the component (A) and deprotected hydroxy group and/or deprotected carboxy group are crosslinked on the pattern exposed portion; and developing the second resist film with a developer to give a metal film pattern composed of the crosslinked portion. This provides a method for forming a thin film resist pattern with higher resolution and higher sensitivity.

Abstract: A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure.

Abstract: The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate to be processed W is subjected to an ultrasonic cleaning process. While the substrate to be processed is being cleaned, a dissolved gas concentration of a gas dissolved in the cleaning liquid contained in the cleaning tank is changed.

Abstract: An angle detecting device with a self-calibration function has sensor heads for reading a scale of a scale disc fixed to a rotating shaft, has first sensor heads and a second sensor head at a position of one of the first sensor heads, in which the first and second sensor heads are calibrated with a first group including L sensor heads and a second group including M sensor heads, respectively arranged with a different equiangular interval, and in which phases of the calibration values obtained from the second group, are shifted by j*P/L(j=1 to L?1), where P is the total number of scale marks, and average values of the calibration values from the second group and the shifted calibration values are obtained, the average values are added to the calibration values from the first group, and the added values are output as calibration values.

Abstract: An angle detecting device with self-calibration function, in which sensor heads are provided with an equiangular interval on a scale disc fixed to a rotating shaft, one sensor head is selected as reference, a sum of measurement differences between the reference and another sensor head is divided by the number of sensor heads, to determine an average, whereby a self-calibration value is obtained, in which a sensor head of the reference is changed to another in order, and the respective self-calibration value is obtained, which value is deviated by an angle of arrangement with respect to a particular sensor head, and a phase is aligned to a self-calibration value of the particular one as the reference, to determine an average for calculations of this phase conversion, which average is subtracted from the respective calculation subjected to the phase conversion, to obtain only asynchronous angular errors.

Abstract: In a lid member with a waterproofing function, the lid member including a projection portion integrally formed in one surface of a resin main body of the lid member opening and closing an opening portion formed in a housing, and accommodated in the opening portion, and a seal portion integrally formed in an outer peripheral surface of the projection portion, provided with an annular projection coming into close contact with a peripheral surface of the opening portion, and made of a rubber-like elastic material, the annular projection is formed as a shape which is expanded toward an inner portion side of the opening portion, forms in its outer peripheral surface a taper surface which converges toward the inner portion side, and is provided with a seal surface having a circular arc shaped cross section so as to be connected to a maximum diameter portion of the taper surface.

Abstract: Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.