Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Abstract: A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.

Abstract: A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and forming a light-emitting stack on an first surface of the substrate after cleaning the substrate.

Abstract: A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.

Abstract: An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.

Abstract: A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.

Abstract: A method for manufacturing a light-emitting device comprising the steps of cutting a light-emitting unit by a laser beam, and cleaning the light-emitting unit by an acid solution to remove by-products resulted from the laser cutting.

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.