Abstract: A light emitting device includes a serially-connected LED array of a plurality of LED cells epitaxially formed on a substrate. The LED array includes a first LED cell, and a second LED cell adjacent to each other, and a serially-connected LED sub-array including at least three LED cells intervening the first and the second LED cells. Each LED cell includes a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; and an active layer formed between the first semiconductor layer and the second semiconductor layer; wherein the distance between the first semiconductor layer of the first LED cell and that of the second LED cell is larger than 30 ?m, and one of the first semiconductor layers and/or one of the second semiconductor layers of the LED cells includes a round corner with a radius of curvature not less than 15 ?m.

Abstract: This application discloses a light-emitting diode comprising a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a semiconductor contact layer on the second semiconductor layer. The second semiconductor layer comprises a first sub-layer and a second sub-layer formed above the first sub-layer, wherein the material of the second sub-layer comprises AlxGa1-xN(0<x<1) and the second sub-layer has a surface comprising a structure of irregularly distributed holes.

Abstract: A method of fabricating an optoelectronic device comprising, providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a semiconductor epitaxial stack on the first major surface including a first conductive-type semiconductor layer having a first doping concentration, an active layer, and a second conductive-type semiconductor layer wherein the semiconductor epitaxial stack having four boundaries and a geometric center; and forming a plurality of the hollow components in the first conductive-type semiconductor layer wherein the plurality of the hollow components is formed from the boundary of the semiconductor epitaxial stack to the geometric center of the semiconductor epitaxial stack.

Abstract: A light-emitting element comprises: a light-emitting semiconductor stack comprising a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a first protection layer on the light-emitting semiconductor stack and comprising a first through hole; and a conductive contact layer on the first protection layer and electrically connected to the first electrode through the first through hole.

Abstract: A light-emitting device comprises a first semiconductor layer; and a transparent conductive oxide layer comprising a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region.

Abstract: A light-emitting device comprises a first type semiconductor layer, a multi-quantum well structure on the first type semiconductor layer, and a second type semiconductor layer on the multi-quantum well structure, wherein the multi-quantum well structure comprises a first portion near the first type semiconductor layer, a second portion near the second type semiconductor layer, and a strain releasing layer between the first portion and the second portion and comprising a first layer including Indium, a second layer including Aluminum on the first layer, and a third layer including Indium on the second layer, wherein the Indium concentration of the third layer is higher than that of the first layer.

Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.

Abstract: A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.

Abstract: A light-emitting device comprises a semiconductor light emitting stack and an electrode on the semiconductor light emitting stack, wherein the electrode comprises a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer, and a barrier layer inserted between the mirror layer and the bonding layer and covers the mirror layer to prevent the mirror layer reacting with the bonding layer, wherein the barrier layer comprises a first pair of different metals.

Abstract: An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate; a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate; a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer and the ratio of the height and the width of the first hollow component is 1/5-3.

Abstract: An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate; a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate; a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer and the ratio of the height and the width of the first hollow component is 1/5-3.

Abstract: A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and forming a light-emitting stack on an first surface of the substrate after cleaning the substrate.