Abstract: The method for processing a metal layer including the following steps is illustrated. First, a semiconductor substrate is provided. Then, a metal layer is formed over the semiconductor substrate. Furthermore, a microwave energy is used to selectively heat the metal layer without affecting the underlying semiconductor substrate and other formed structures, in which the microwave energy has a predetermined frequency in accordance with a material of the metal layer, and the predetermined frequency ranges between 1 KHz to 1 MHz.

Abstract: An electrical chemical plating process is provided. A semiconductor structure is provided in an electrical plating platform. A pre-electrical-plating step is performed wherein the pre-electrical-plating step is carried out under a fixed voltage environment and lasts for 0.2 to 0.5 seconds after the current is above the threshold current of the electrical plating platform. After the pre-electrical-plating step, a first electrical plating step is performed on the semiconductor structure.

Abstract: A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.

Abstract: A method for fabricating an interconnection structure includes the following steps. Firstly, a substrate having a first conductive layer thereon is provided. Next, an ultra low-k material layer is formed on the substrate. Next, a portion of the ultra low-k material layer is removed, so as to form an opening to expose the first conductive layer. Next, a dry-cleaning process is performed by using gas, so as to clean a surface of the first conductive layer exposed by the opening. The dry-cleaning process is performed at a temperature in a range from the room temperature to 100° C.