Abstract: A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.

Abstract: A rinse material composition used in a process of forming a pattern using lithography includes a dry development rinse material (DDRM) compound and a solvent. The DDRM compound is designed to form hydrogen bonds, van der Waals bonds, coordination bonds, or ionic bonds with photosensitive crosslinkable molecules of a resist pattern. The resist pattern contains an organometallic material. The DDRM compound is dissolved in the solvent.

Abstract: The present invention relates to PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PATTERNS USING A PHOTORESIST COMPOSITION. Disclosed is a photoresist composition including an organometallic compound including a ring including a metal, a first heteroatom coordinated to the metal, and a second heteroatom covalently bonded to the metal, and an aromatic ring substituted or fused to the ring; and a solvent.

Abstract: Disclosed are resist compositions and semiconductor device fabrication methods wing the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.

Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.

Abstract: A photoresist composition includes an organometallic compound represented by Formula 1.

Abstract: The present disclosure relates to a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns by using the semiconductor photoresist composition.

Abstract: Disclosed photoresist topcoat compositions including a polymer including at least one of the first structural units represented by Chemical Formula 1 or Chemical Formula 2, a thermal acid generator (TAG), and a solvent; and a method of forming patterns using the photoresist topcoat composition.

Abstract: A non-chemically amplified resist composition includes a photo-decomposable organic resin including a C—O bond in a main chain thereof; an acidic chain scission enhancer; and a solvent.

Abstract: A method of manufacturing a semiconductor device includes sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate, patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer, implanting ions into the first region of the organic layer exposed by the first mask pattern, removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer, and removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.

Abstract: A method of manufacturing a semiconductor device, including forming a plurality of first organic patterns spaced apart from one another in one direction on a supporting layer, wherein the plurality of first organic patterns include ion-implanted patterns, forming a plurality of inorganic patterns on the supporting layer that are in contact with the plurality of first organic patterns and spaced apart from one other in the one direction, wherein the inorganic patterns include ion-implanted patterns, forming a plurality of second organic patterns arranged between the plurality of inorganic patterns on the supporting layer, wherein the second organic patterns include ion-implanted patterns, and selectively etching the ion-implanted inorganic patterns to form a plurality of space patterns that are arranged between the ion-implanted first organic patterns and the ion-implanted second organic patterns.

Abstract: A resist material is combined with a ligand containing four or more fluorine atoms and is represented by the following formula: [(R1M)iOjXk(OH)m] (OH)nR2p, wherein one of “R1” and “R2” is CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, the other of “R1” and “R2” is CaHc, CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, “a” and “c” are each independently an integer of 0 to 20, “b” is an integer of 4 to 30, “d” and “e” are each independently an integer of 0 to 5, “M” is one metal selected from a specified list, “i” is an integer from 1 to 12, “j” is an integer of 1 to 14, “X” is a halogen selected from a specified list, “k” and “m” are each independently an integer of 0 to 6, and “n” and “p” are each independently an integer of 0 to 2.

Abstract: A substrate processing method includes forming a layer of an inorganic photoresist composition on a substrate, irradiating the layer of the inorganic photoresist composition with extreme ultraviolet (EUV) light using an exposure mask, baking the layer of the inorganic photoresist composition, which is irradiated with EUV light, developing the layer of the inorganic photoresist composition using a developer to form a first inorganic photoresist pattern, performing plasma treatment on the first inorganic photoresist pattern to form a second inorganic photoresist pattern, and processing the substrate using the second inorganic photoresist pattern as a process mask, wherein the plasma treatment uses plasma of a process gas capable of generating hydrogen ions and fluorine ions.

Abstract: A hardmask-forming compound, a hardmask composition, and a method of manufacturing an integrated circuit (IC), the hardmask-forming compound including a moiety represented by Formula 1:

Abstract: A photoresist composition including an organometallic compound, and a method for fabricating a semiconductor device using the same are provided. The photoresist composition may include an organometallic compound, a radical sensitizer including a structure of Chemical formula 2-1 or Chemical formula 2-2, and a solvent. In Chemical formula 2-1, A1 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R1, R2 and R3 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group. In Chemical formula 2-2, A2 is a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, and R4 and R5 are each independently hydrogen, a halogen, a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms, or a hetero-functional group.

Abstract: A method of manufacturing a semiconductor device, the method including forming a lower film on a substrate; forming a metal-containing photoresist material film on the lower film; patterning the metal-containing photoresist material film to form a photoresist pattern including openings therein such that a scum remains on the lower film; performing a descum operation to remove the scum from the lower film; and etching the lower film using the photoresist pattern, wherein performing the descum operation includes providing the substrate to a processing chamber; generating oxygen plasma; and reacting the scum with the oxygen plasma.

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

Abstract: A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.

Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.