Abstract: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is improved in resolution and forms a pattern with a minimal line edge roughness.

Abstract: Lactone-containing compounds having formula (1) are novel wherein R1 is H, F, methyl or trifluoromethyl, R2 and R3 are monovalent hydrocarbon groups, or R2 and R3 may together form an aliphatic hydrocarbon ring, R4 is H or CO2R5, R5 is a monovalent hydrocarbon group, W is CH2, O or S, and k1 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation?500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, pattern edge roughness, pattern density dependency and exposure margin.

Abstract: A positive resist composition is provided comprising (A) a resin component having a carboxylic acid moiety protected with an acetal protective group which is decomposable under the action of an acid, wherein in the carboxylic acid moiety protected with an acetal protective group, deprotection occurs not by way of ?-elimination, and (B) a photoacid generator. The resist composition exhibits a high resolution when processed by ArF lithography.

Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

Abstract: In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.

Abstract: A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.

Abstract: A positive resist composition comprising a resin component having a solubility in an alkaline developer that increases under the action of an acid, a compound capable of generating an acid in response to actinic radiation, and an acidic organic compound having a molecular weight of at least 150 exhibits a high resolution and is effective in minimizing defects when processed by the photolithography. The composition is thus quite effective for precise micropatterning.

Abstract: Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R1 is H or a monovalent C1-C20 hydrocarbon group in which any —CH2— moiety may be replaced by —O— or —C(?O)—, R2 is H or a monovalent C1-C6 hydrocarbon group, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, and M1 is Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions.

Abstract: A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.

Abstract: A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor.

Abstract: Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided.

Abstract: A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2, R3 and R6 are H or CH3, R4 and R5 are H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein R7 is C1–C10 alkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.

Abstract: A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

Abstract: A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

Abstract: A polymer comprising recurring units having formulae (1) and (2) and having a weight average molecular weight of 1,000 to 50,000. In the formulae, R1 and R3 are H or CH3, R4 is alkylene, R2 is a lactone structure-containing substituent group selected from formulae (R2-1) to (R2-4) wherein Y is CH2 or O, R5 is CO2R7 when Y is CH2, or R5 is H or CO2R7 when Y is O, R6 is H or alkyl, and R7 is alkyl which may be separated by at least one oxygen atom. The polymer is used as a base resin to formulate a resist composition, especially a chemically amplified positive resist composition which has a high sensitivity, resolution and dry etch resistance and forms a resist pattern having good substrate adhesion and least roughened sidewalls.

Abstract: A (meth)acrylic copolymer is endowed with a good profile of rigidity and hydrophilicity by introducing not only polycyclic structure units, but also recurring units having a high polarity. A chemically amplified positive resist composition comprising the polymer has a high sensitivity, resolution and etch resistance and improved substrate adhesion and developer affinity.

Abstract: Acetal compounds in which a 5- or 6-membered ring acetal structure is connected to a norbornene structure through a linker represented by —(CH2)m— in which one hydrogen atom may be substituted with a hydroxyl or acetoxy group, and m is from 1 to 8 are novel. Using the acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

Abstract: A polymer comprising repeat units of formulae (1) to (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.

Abstract: Provided are a resist material having markedly high resolution and etching resistance of a practically usable level, and being useful for fine microfabrication; a patterning method using the resist material; and a polymer useful as a base resin for the resist material. More specifically, provided are a polymer having a weight-average molecular weight of 1,000 to 500,000, which comprises one or more repeating units selected from the group consisting of repeating units represented by formulae (1) to (3) below; and one or more repeating units of the formula (4) below; and a resist material containing the polymer.

Abstract: Epoxy compounds of formula (1) are provided wherein W is CH2, O or S, X and Y are —CR1R2— or —C(?O)—, k is 0 or 1, R1 and R2 are H or alkyl, or R1 and R2, taken together, may form an aliphatic hydrocarbon ring with the carbon atom to which they are connected. A resist composition comprising a polymer having recurring units of the epoxy compound as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.