Abstract: P-type second semiconductor layers each interposed between a corresponding pair of n-type first semiconductor layers reduce the apparent doping concentration in the entire collector layer without reducing the doping concentrations in the first semiconductor layers. This improves the linearity of capacitance characteristics and enables sufficient mass productivity to be achieved. Interposing each of the second semiconductor layers between the corresponding pair of the first semiconductor layers reduce the average carrier concentration over the entire collector layer, which allows a wide depletion layer to be formed inside the collector layer and, as a result, reduces base-collector capacitance.

Abstract: P-type second semiconductor layers each interposed between a corresponding pair of n-type first semiconductor layers reduce the apparent doping concentration in the entire collector layer without reducing the doping concentrations in the first semiconductor layers. This improves the linearity of capacitance characteristics and enables sufficient mass productivity to be achieved. Interposing each of the second semiconductor layers between the corresponding pair of the first semiconductor layers reduce the average carrier concentration over the entire collector layer, which allows a wide depletion layer to be formed inside the collector layer and, as a result, reduces base-collector capacitance.

Abstract: A semiconductor switch device and a method of manufacturing the semiconductor switch device are provided. The semiconductor switch device includes semiconductor elements on a single semiconductor substrate. At least one of the semiconductor elements constitutes a switch circuit and at least one other of the semiconductor elements constitutes a logic (connection) circuit. Each semiconductor element includes a recess, a gate electrode in the recess, a drain electrode, and a source electrode. In one representative aspect, the gate electrode in the switch circuit can have a rectangular external shape in section, and the gate electrode in the connection circuit has a shape in section other than rectangular.

Abstract: A semiconductor switch device and a method of manufacturing the semiconductor switch device are provided. The semiconductor switch device includes semiconductor elements on a single semiconductor substrate. At least one of the semiconductor elements constitutes a switch circuit and at least one other of the semiconductor elements constitutes a logic (connection) circuit. Each semiconductor element includes a recess, a gate electrode in the recess, a drain electrode, and a source electrode. In one representative aspect, the gate electrode in the switch circuit can have a rectangular external shape in section, and the gate electrode in the connection circuit has a shape in section other than rectangular.