Abstract: Provided is a charged particle beam device capable of stably obtaining an effect of improving the depth of focus or the effect of correcting spherical aberration. The charged particle beam device includes an aperture having an annular slit or an electrode having an annular slit and is provided with means for adjusting the incident angle at which the charged particle beam is incident on the aperture or the electrode. Since the incident angle at which the charged particle beam is incident on the aperture or electrode having an annular slit can be made closer to perpendicular, the effect of improving the depth of focus or the effect of correcting spherical aberration can be stably obtained.

Abstract: Provided is a charged particle beam device capable of stably obtaining an effect of improving the depth of focus or the effect of correcting spherical aberration. The charged particle beam device includes an aperture having an annular slit or an electrode having an annular slit and is provided with means for adjusting the incident angle at which the charged particle beam is incident on the aperture or the electrode. Since the incident angle at which the charged particle beam is incident on the aperture or electrode having an annular slit can be made closer to perpendicular, the effect of improving the depth of focus or the effect of correcting spherical aberration can be stably obtained.

Abstract: As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.

Abstract: Provided is a charged particle beam apparatus capable of stably obtaining a spherical aberration correction effect. The charged particle beam apparatus includes: a charged particle beam aperture stop 121 and an electrode 122 that are arranged on an optical axis between the charged particle beam source 101 and the objective lens 105; and a power supply 108 that applies a voltage between the charged particle beam aperture stop 121 and the electrode 122, in which the voltage that is applied from the electrode to the charged particle beam aperture stop by the power supply is a voltage having a polarity opposite to a charge of the charged particle beam, the electrode 122 includes an annular aperture 205, and the charged particle beam aperture stop 121 includes a plurality of apertures 201 that are arranged at positions overlapping the annular aperture 205 of the electrode 122 when viewed in a direction Z along the optical axis.

Abstract: A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

Abstract: Tweezers 8, which can grip a sample piece 9, includes a gripping member 8a1 and a gripping member 8a2. The gripping member 8a1 includes a gripping region 8c1 and an abutment region 8b1, and the gripping member 8a2 includes a gripping region 8c2 and an abutment region 8b2. The gripping region 8c1 and the gripping region 8c2 include a gripping surface SF1 and a gripping surface SF2 for gripping the sample piece 9, respectively. The abutment region 8b1 protrudes from the gripping region 8c1 in a direction directed from the gripping surface SF1 to the gripping surface SF2, and the abutment region 8b2 protrudes from the gripping region 8c2 in a direction directed from the gripping surface SF2 to the gripping surface SF1.

Abstract: The present invention provides a charged particle beam apparatus capable of efficiently reducing the effect of a residual magnetic field when SEM observation is performed. The charged particle beam apparatus according to the present invention includes a first mode for passing a direct current to a second coil after turning off a first coil, and a second mode for passing an alternating current to the second coil after turning off the first coil.

Abstract: Provided is a technique capable of shortening observation throughput of a sample. A transfer device 2 includes a holder 24 configured to hold a mesh MS on which a sample to be analyzed using a charged particle beam device 3 is mounted, a position information acquisition function configured to acquire first information about a positional relationship between the mesh MS and the holder 24, and a position information output function configured to output the first information to the charged particle beam device 3.

Abstract: A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

Abstract: A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device.

Abstract: A lamella 10 including an analysis portion 11 and a cutout portion 12 separated from the analysis portion 11 is produced. When a plurality of the lamellae 10 are transported to a lamella grid 20, the plurality of lamellae 10 are supported by a support portion 22 protruding from a surface of a substrate 21, and are mounted adjacent to each other in a Z direction. At this time, the cutout portion 12 prevents the analysis portion 11 from damage.

Abstract: The present invention realizes a composite charged particle beam apparatus capable of suppressing a leakage magnetic field from a pole piece forming an objective lens of an SEM with a simple structure. The charged particle beam apparatus according to the present invention obtains an ion beam observation image while passing a current to a first coil constituting the objective lens, and performs an operation of reducing the image shift by passing a current to a second coil with a plurality of current values, and determines a current to be passed to the second coil based on a difference between the operations.

Abstract: As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.

Abstract: Provided is a charged particle beam apparatus capable of stably obtaining a spherical aberration correction effect. The charged particle beam apparatus includes: a charged particle beam aperture stop 121 and an electrode 122 that are arranged on an optical axis between the charged particle beam source 101 and the objective lens 105; and a power supply 108 that applies a voltage between the charged particle beam aperture stop 121 and the electrode 122, in which the voltage that is applied from the electrode to the charged particle beam aperture stop by the power supply is a voltage having a polarity opposite to a charge of the charged particle beam, the electrode 122 includes an annular aperture 205, and the charged particle beam aperture stop 121 includes a plurality of apertures 201 that are arranged at positions overlapping the annular aperture 205 of the electrode 122 when viewed in a direction Z along the optical axis.

Abstract: A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam, to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

Abstract: As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.

Abstract: To provide, in observation of a sample that requires a movement between various devices, a charged particle beam device, a method for processing the sample, and an observation method which facilitate the movement between the devices. The charged particle beam device that processes an observation target on the sample using a charged particle beam includes: a sample stage on which the sample is placed; an observation unit configured to observe the observation target; and a writing unit configured to write information of the observation target in a writing position of the sample.

Abstract: A charged particle beam device includes: a charged particle beam source configured to generate a charged particle beam with which a sample is irradiated; a charged particle detection unit configured to detect a charged particle generated when the sample is irradiated with the charged particle beam; an intensity data generation unit configured to generate intensity data of the charged particle detected by the charged particle detection unit; a pulse-height value data generation unit configured to generate pulse-height value data of the charged particle detected by the charged particle detection unit; and an output unit configured to output a first image of the sample based on the intensity data and a second image of the sample based on the pulse-height value data.

Abstract: When a charged particle beam aperture having an annular shape is used, since a charged particle beam directly above the optical axis having the highest current density in the charged particle beam is blocked, it is difficult to dispose the charged particle beam aperture at an optimal mounting position.

Abstract: When using a charged particle beam aperture having a ring shape in a charged particle beam device, the charged particle beam with the highest current density immediately above the optical axis, among the charged particle beams is blocked, so that it is difficult to dispose the charged particle beam aperture at the optimal mounting position. Therefore, in addition to the ring-shaped charged particle beam aperture, a hole-shaped charged particle beam aperture is provided, and it is possible to switch between the case where the ring-shaped charged particle beam aperture is disposed on the optical axis of the charged particle beam and the case where the hole-shaped charged particle beam aperture is disposed on the optical axis of the charged particle beam.