Abstract: Disclosed is a charged particle beam apparatus wherein charged particles emitted from a sample are efficiently acquired at a position as close as possible to the sample, said position being in the objective lens. This charged particle beam apparatus is provided with: a charged particle beam receiving surface that is provided with a scintillator that emits light by means of charged particles; a photodetector that detects light emitted from the scintillator; a mirror that guides, to the photodetector, the light emitted from the scintillator; and an objective lens for focusing the charged particle beam to a sample. A distance (Lsm) between the charged particle beam receiving surface and the mirror is longer than a distance (Lpm) between the photodetector and the mirror, and the charged particle beam receiving surface, the mirror, and the photodetector are stored in the objective lens.

Abstract: The present invention provides a composite charged particle beam device which is provided with two or more charged particle beam columns and enables high-resolution observation while a sample is placed at the position of a cross point. The present invention has the following configuration. A composite charged particle beam device is provided with a plurality of charged particle beam columns (101a, 102a), and is characterized in that a sample (103) is disposed at the position of an intersection point (171) where the optical axes of the plurality of columns intersect, a component (408a, 408b) that forms the tip of an objective lens of the charged particle beam column (102a) is detachable, and by replacing the component (408a, 408b), the distance between the intersection point (171) and the tip of the charge particle beam column can be changed.

Abstract: Aiming for easily carrying out an energy discrimination or an angle discrimination of a secondary particle emitted from a sample or easily setting an optimal observation condition, a charged particle beam apparatus is provided with a charged particle source for emitting a charged particle beam, a lens for focusing the charged particle beam to a sample, a detector for detecting a secondary particle emitted from the sample, and an orbit simulator for calculating a position at which the secondary particle emitted from the sample arrives; and in this structure, the orbit simulator calculates an orbit of a secondary particle that satisfies a predetermined condition, and a sample image is formed by using a signal detected at a position where the secondary particle satisfying the predetermined condition arrives at the detector.

Abstract: The present invention relates to modulating an irradiation condition of a charged particle beam at high speed and detecting a signal in synchronization with a modulation period for the purpose of extracting a signal arising from a certain charged particle beam when a sample is irradiated with a plurality of charged particle beams simultaneously or, for example, for the purpose of separating a secondary electron signal arising from ion beam irradiation and a secondary electron signal arising from electron beam irradiation in an FIB-SEM system. The present invention further relates to dispersing light emitted from two or more kinds of scintillators having different light emitting properties, detecting each signal strength, and processing a signal on the basis of a ratio of first signal strength when the sample is irradiated with a first charged particle beam alone to second signal strength when the sample is irradiated with a second charged particle beam alone, the ratio being set by a mechanism.

Abstract: The present invention provides a composite charged particle beam device which is provided with two or more charged particle beam columns and enables high-resolution observation while a sample is placed at the position of a cross point. The present invention has the following configuration. A composite charged particle beam device is provided with a plurality of charged particle beam columns (101a, 102a), and is characterized in that a sample (103) is disposed at the position of an intersection point (171) where the optical axes of the plurality of columns intersect, a component (408a, 408b) that forms the tip of an objective lens of the charged particle beam column (102a) is detachable, and by replacing the component (408a, 408b), the distance between the intersection point (171) and the tip of the charge particle beam column can be changed.

Abstract: Aiming for easily carrying out an energy discrimination or an angle discrimination of a secondary particle emitted from a sample or easily setting an optimal observation condition, a charged particle beam apparatus is provided with a charged particle source for emitting a charged particle beam, a lens for focusing the charged particle beam to a sample, a detector for detecting a secondary particle emitted from the sample, and an orbit simulator for calculating a position at which the secondary particle emitted from the sample arrives; and in this structure, the orbit simulator calculates an orbit of a secondary particle that satisfies a predetermined condition, and a sample image is formed by using a signal detected at a position where the secondary particle satisfying the predetermined condition arrives at the detector.

Abstract: A charged particle beam device includes: a sample stage (146) supporting a sample; a charged particle beam optical system that focuses a charged particle beam from a charged particle source on the sample; a charged particle beam column (101) housing the charged particle beam optical system; a first differential evacuation diaphragm (108) attached to the charged particle beam column (101); a frontal sample chamber (103) disposed in connection with the charged particle beam column (101) via the first differential evacuation diaphragm (108); a second differential evacuation diaphragm (109) attached to the frontal sample chamber (103); a first vacuum pump (141) for evacuating the charged particle beam column (101); and a second vacuum pump (142) for evacuating the frontal sample chamber (103).

Abstract: There is provided a technology which allows SEM observation in real time without deteriorating the processing efficiency in FIB processing. In the present invention, a composite charged-particle-beam apparatus having a FIB column and a SEM column includes an SE3 detector which detects secondary electrons (referred to as tertiary electrons in this specification) discharged when back-scattered electrons generated by irradiating a sample with an electron beam collide with structures in a sample chamber. With use of the tertiary electrons, a SEM image is generated, and based on the SEM image, an ion beam processing state can be observed.

Abstract: In order to provide a charged particle beam apparatus capable of irradiating a desired region in the surface of a sample with a charged particle beam from a wide range of angles, an electrode unit (204) comprising an electrode, the inclination angle of which (i.e. the angle of inclination relative to a plane orthogonal to the extension line of the center axis of the ion beam column (201a)) and the position of which (i.e. the position in the direction along the extension line of the center axis of the ion beam column (201a) and in directions orthogonal thereto) can be adjusted, is arranged within a sample chamber (203) of the charged particle beam apparatus. The charged particle beam apparatus is also configured so that a curved ion beam (201b) is irradiated onto a surface of a sample (202) by the electrode. This enables irradiation of the ion beam (201b) to a desired range within the surface of the sample (202), from a wide range of angles with respect to the sample surface.

Abstract: A composite charged particle beams apparatus of the present invention allows a sample (5)'s cross-section or edge plane to be observed by using an electron beam (2b), the sample (5)'s cross-section or edge plane being fabricated by using an ion beam (1b). The radiation device includes a detector (7) which is capable of detecting low-loss back-scattered electrons (12) including elastically-scattered electrons (11), these electrons (12, 11) being induced by the electron beam (2b) with which the sample (5)'s cross-section or edge plane is irradiated. Moreover, it is desirable that the detector (7) be set up in a space outside an electron-beam column (2a). The above-described configuration has allowed implementation of the high-resolving-power and low-damage SEM observation of the surface information about material and composition of the sample's FIB-fabricated cross-section or edge plane.

Abstract: There is provided a technology which allows SEM observation in real time without deteriorating the processing efficiency in FIB processing. In the present invention, a composite charged-particle-beam apparatus having a FIB column and a SEM column includes an SE3 detector which detects secondary electrons (referred to as tertiary electrons in this specification) discharged when back-scattered electrons generated by irradiating a sample with an electron beam collide with structures in a sample chamber. With use of the tertiary electrons, a SEM image is generated, and based on the SEM image, an ion beam processing state can be observed.

Abstract: A composite charged particle beams apparatus of the present invention allows a sample (5)'s cross-section or edge plane to be observed by using an electron beam (2b), the sample (5)'s cross-section or edge plane being fabricated by using an ion beam (1b). The radiation device includes a detector (7) which is capable of detecting low-loss back-scattered electrons (12) including elastically-scattered electrons (11), these electrons (12, 11) being induced by the electron beam (2b) with which the sample (5)'s cross-section or edge plane is irradiated. Moreover, it is desirable that the detector (7) be set up in a space outside an electron-beam column (2a). The above-described configuration has allowed implementation of the high-resolving-power and low-damage SEM observation of the surface information about material and composition of the sample's FIB-fabricated cross-section or edge plane.