Abstract: A DLL (delay locked loop) circuit includes a first variable delay circuit, a pair of second variable delay circuits and a first synthesis circuit. The first variable delay circuit outputs signals of different delayed time values from each of first and second clock transitions. The pair of second variable delay circuits receive the signals from the first variable delay circuit, and the first synthesis circuit synthesizes output signals of the pair of second variable delay circuits to output the resulting synthesized signal. Each of the pair of second variable delay circuits includes a pair one-shot pulse generating circuits that generate one-shot pulses from the signals from the first variable delay circuit, a pair latch circuits, and a second synthesis circuit. The second synthesis circuit receives the set outputs of the latch circuits to output a signal which is a synthesis at a preset synthesis ratio.

Abstract: A semiconductor integrated circuit device includes a control circuit configured to generate a control code to control a parameter of a predetermined circuit and outputs the control code to the predetermined circuit; and a latch circuit connected with an output of the control circuit to latch the control code in response to a control signal. The latch circuit may be provided between the control circuit and the predetermined circuit to latch the control code or transfer the control code to the predetermined circuit, in response to the control signal.

Abstract: A DLL circuit includes: a phase determining circuit that compares phases of respective rising edges of CK and LCLK to generate a determining signal R-U/D; a phase determining circuit that compares phases of respective falling edges of CK and LCLK to generate a determining signal F-U/D; a first adjusting circuit that adjusts a position of an active edge of LCLKR based on the determining signal R-U/D; a second adjusting circuit that adjusts a position of an active edge of LCLKF based on the determining signal F-U/D; a clock generating circuit that generates LCLK based on LCLKR and LCLKF; and a stop circuit that stops an adjusting operation by the second adjusting circuit in response to an adjusting direction of the active edge of LCLKR being opposite to each other to an adjusting direction of the active edge of LCLKF.

Abstract: There is disclosed a duty ratio adjustment for adjusting the duty ratio of an input clock signal. First and second one-shot pulse generation circuits respectively detect rising/tailing edges of an external input signal and output pulse signals of constant widths. Third and fourth one-shot pulse generation circuits respectively detect rising/tailing edges of an output signal from the delay circuit and output pulse signals. A selector circuit outputs the pulse signals that are output from the third and second one-shot pulse generation circuits as H edge/L edge generation clock signals, when the L width is broadened, and outputs the pulse signals that are output from the first and fourth one-shot pulse generation circuits as H edge/L edge generation clock signals, when the H width is broadened.

Abstract: A semiconductor device has an output impedance adjustment circuit for automatically adjusting an output impedance of an output circuit including transistors connected in parallel. The output impedance adjustment circuit comprises: a replica circuit including a circuit portion of the substantially same configuration as the output circuit; a comparator for comparing a magnitude of the output impedance of the replica circuit with a reference resistor and for outputting a comparison result as an internal counter control signal; a switching controller selectively switching between an external counter control signal from outside and the internal counter control signal; and a counter circuit for performing a count operation selectively according to the internal or the external counter control signal and for outputting a count value as an adjustment code which is supplied to the output circuit and the replica circuit so that each transistor is controlled to be on/off based on the adjustment code.

Abstract: A semiconductor integrated circuit device includes a control circuit configured to generate a control code to control a parameter of a predetermined circuit and outputs the control code to the predetermined circuit; and a latch circuit connected with an output of the control circuit to latch the control code in response to a control signal. The latch circuit may be provided between the control circuit and the predetermined circuit to latch the control code or transfer the control code to the predetermined circuit, in response to the control signal.

Abstract: There is disclosed a duty ratio adjustment for adjusting the duty ratio of an input clock signal. First and second one-shot pulse generation circuits respectively detect rising/tailing edges of an external input signal and output pulse signals of constant widths. Third and fourth one-shot pulse generation circuits respectively detect rising/tailing edges of an output signal from the delay circuit and output pulse signals. A selector circuit outputs the pulse signals that are output from the third and second one-shot pulse generation circuits as H edge /L edge generation clock signals, when the L width is broadened, and outputs the pulse signals that are output from the first and fourth one-shot pulse generation circuits as H edge /L edge generation clock signals, when the H width is broadened.

Abstract: A method for testing an output circuit of a semiconductor device including a plurality of output circuits includes the step of turning ON p-ch and n-ch MIS transistors of a subject output circuit, turning ON and OFF one and the other, respectively, of p-ch and n-ch MIS transistors of another output circuit used as a reference output circuit, measuring the potential difference between the output terminal of the subject output circuit and the output terminal of the reference output circuit and the penetrating current of the subject output circuit, and calculating the ON-resistance of the p-ch or n-ch transistor of the subject output circuit.

Abstract: A method for testing an output circuit of a semiconductor device including a plurality of output circuits includes the step of turning ON p-ch and n-ch MIS transistors of a subject output circuit, turning ON and OFF one and the other, respectively, of p-ch and n-ch MIS transistors of another output circuit used as a reference output circuit, measuring the potential difference between the output terminal of the subject output circuit and the output terminal of the reference output circuit and the penetrating current of the subject output circuit, and calculating the ON-resistance of the p-ch or n-ch transistor of the subject output circuit.

Abstract: A method for testing an output circuit of a semiconductor device including a plurality of output circuits includes the step of s turning ON p-ch and n-ch MIS transistors of a subject output circuit, turning ON and OFF one and the other, respectively, of p-ch and n-ch MIS transistors of another output circuit used as a reference output circuit, measuring the potential difference between the output terminal of the subject output circuit and the output terminal of the reference output circuit and the penetrating current of the subject output circuit, and calculating the ON-resistance of the p-ch or n-ch transistor of the subject output circuit.

Abstract: A method for testing an output circuit of a semiconductor device including a plurality of output circuits includes the step of s turning ON p-ch and n-ch MIS transistors of a subject output circuit, turning ON and OFF one and the other, respectively, of p-ch and n-ch MIS transistors of another output circuit used as a reference output circuit, measuring the potential difference between the output terminal of the subject output circuit and the output terminal of the reference output circuit and the penetrating current of the subject output circuit, and calculating the ON-resistance of the p-ch or n-ch transistor of the subject output circuit.

Abstract: A semiconductor device is provided with a memory cell array, an interface circuit portion and a control circuit. The interface circuit portion controls input and output of a signal between the memory array and an external circuit. The control circuit controls operating states of the interface circuit portion independently of the memory cell array based on an externally inputted signal.