Abstract: A semiconductor memory device comprises an input address buffer circuit and a memory cell circuit which are constructed of static logic circuits, an address decoder circuit which is constructed of a dynamic logic circuit, a detector circuit which detects a change in an input address signal, and a pulse generator circuit which is started operating by an output signal of the detector circuit and which provides a clock signal for the dynamic logic circuit. Owing to the detector circuit and the pulse generator circuit, the semiconductor memory device operates without the necessity for any external clock signal.

Abstract: A nickel alloy for use in a heater for a glow plug, which comprises pure nickel and 0.05 to 2.0% by weight of a metal such as yttrium, zirconium or ruthenium, which does not form a solid solution with nickel.

Abstract: An alloy for spark plug center electrodes comprising about 1 to about 10% by weight of chromium, about 30 to about 70% by weight of palladium and the balance gold.

Abstract: A split type sectional forming roll in which a split roll is formed at least two roll segments, a separating line of a roll segment to have an acute angle in a roll segment section adjacent to a side portion of another roll segment has an angle to a vertical line which is perpendicular to a roll shaft in outer peripheral portion and a separating line parallel to the above described vertical line in inner peripheral portion.Thereby the roll segments prevents damages of roll such as breakage or chipping out so that this split type sectional forming roll has a longer life sharply.

Abstract: In a n-channel (or p-channel) random access memory in which a plurality of memory cells are arranged in a matrix form in a p-type (or n-type) semiconductor substrate, clamping MOSFET's are connected between word lines provided for the associated rows of memory cells of the matrix and a reference potential to which gates the source electrodes of the information storing MOSFET's of the memory cells are connected. The clamping MOSFET has a lower threshold voltage than a row selecting MOSFET connected to the word line and clamps the word line when the word line is not selected, so that a delay in the read-out operation is eliminated or suppressed.

Abstract: For driving a plurality of memory cells, a driver circuit, connected to the word driver line of the memory cells, includes a resistive connection, connected between the word line and ground potential, for preventing the potential of the word line from floating. The driver circuit includes an enhancement-type switching MOSFET and a depletion type resistor MOSFET connected in series. By virtue of the connection of a gate of the depletion type MOSFET, the depletion type MOSFET is always turned on so that whether or not the switching type enhancement MOSFET is turned on, the common connection between the switching MOSFET and the resistive MOSFET will always be at a prescribed potential thereby preventing the word driver line from floating.