Abstract: An image processing device includes a first processing unit which executes blurring processing in a common focus position on each of plural images in mutually different focus positions, an integration unit which generates an integrated image resulting from integration of the plural images on which the blurring processing is executed, and a second processing unit which generates a composite image having a predetermined blur degree by executing sharpening processing on the integrated image generated by the integration unit based on information in which optical information indicating optical characteristics of an optical system in which the plural images are acquired and a blur degree of the blurring processing in the common focus position are composited together along a depth direction of the plural image.

Abstract: An image processing device includes a first processing unit which executes blurring processing in a common focus position on each of plural images in mutually different focus positions, an integration unit which generates an integrated image resulting from integration of the plural images on which the blurring processing is executed, and a second processing unit which generates a composite image having a predetermined blur degree by executing sharpening processing on the integrated image generated by the integration unit based on information in which optical information indicating optical characteristics of an optical system in which the plural images are acquired and a blur degree of the blurring processing in the common focus position are composited together along a depth direction of the plural image.

Abstract: An exposure apparatus includes a sensor for detecting light arriving from a projection optical system via a liquid provided on an image plane side of the projection optical system. The sensor includes a light transmissive member provided on a stage and a light receiving element for receiving light arriving from the projection optical system via the light transmissive member. The light transmissive member includes a first surface and a second surface. The first surface is arranged on the stage, comes into contact with the liquid, and is a surface on which the light arriving from the projection optical system is incident via the liquid. At least one of the first and second surfaces diffuses or diffracts the light having arrived from the projection optical system. The light receiving element receives the light that has been diffused or diffracted.

Abstract: An exposure apparatus includes an optical member that can be provided on a stage. The optical member has a first surface contacting a liquid when moved to face a projection system, and a second surface contacting a gas and transmitting light having come from the projection system via the liquid and the first surface. The optical member is configured such that at least a large-angle ray of the light, which has an angle with an optical axis of the projection system sufficiently large to undergo total reflection at an end surface of the projection system when the liquid is absent, travels from the projection system to the second surface without passing through gas. The second surface transmits the large-angle ray, which is received by the light-receiving surface.

Abstract: An exposure apparatus includes an optical member that can be provided on a stage. The optical member has a first surface contacting a liquid when moved to face a projection system, and a second surface contacting a gas and transmitting light having come from the projection system via the liquid and the first surface. The optical member is configured such that at least a large-angle ray of the light, which has an angle with an optical axis of the projection system sufficiently large to undergo total reflection at an end surface of the projection system when the liquid is absent, travels from the projection system to the second surface without passing through gas. The second surface transmits the large-angle ray, which is received by the light-receiving surface.

Abstract: An exposure apparatus irradiates a substrate with light via a projection system and liquid, and includes a stage that moves below the projection system, and a light-receiving element having a light-receiving surface. An optical member provided on the stage has a first surface contacting the liquid when moved to face the projection system, and a second surface contacting a gas and transmitting light having come from the projection system via the liquid and the first surface. The optical member is configured such that at least a large-angle ray of the light, which has an angle with an optical axis of the projection system sufficiently large to undergo total reflection at an end surface of the projection system when the liquid is absent, travels from the projection system to the second surface without passing through gas. The second surface transmits the large-angle ray, which is received by the light-receiving surface.

Abstract: An exposure apparatus irradiates a substrate with light via a projection system and liquid, and includes a stage that moves below the projection system, and a light-receiving element having a light-receiving surface. An optical member provided on the stage has a first surface contacting the liquid when moved to face the projection system, and a second surface contacting a gas and transmitting light having come from the projection system via the liquid and the first surface. The optical member is configured such that at least a large-angle ray of the light, which has an angle with an optical axis of the projection system sufficiently large to undergo total reflection at an end surface of the projection system when the liquid is absent, travels from the projection system to the second surface without passing through gas. The second surface transmits the large-angle ray, which is received by the light-receiving surface.

Abstract: A part of exposure beam through a liquid via a projection optical system enters a light-transmitting section, enters an optical member without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.

Abstract: Provided is an exposure apparatus that is able to prevent liquid from remaining on a measuring part. An exposure apparatus comprises a measuring system (60), which has a first pattern (61) formed on the upper surface of a substrate stage, and a second area (S2) specified on the upper surface in the vicinity of a first area (S1), which includes the first pattern (61), and a second pattern (80) is formed in the second area (S2) so that the liquid (LQ) that has remained so as to span the first area (S1) and the second area (S2) retreats from the first area (S1) and collects in the second area (S2).

Abstract: A part of exposure beam through a liquid via a projection optical system enters a light-transmitting section, enters an optical member without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.

Abstract: A main controller moves a reticle stage in a scanning direction, illuminates an area on a reticle including a mark area in which predetermined marks are formed with illumination light, forms an aerial image of at least one mark existing in the mark area via a projection optical system, and measures the aerial image using an aerial image measuring unit. The main controller repeatedly performs such aerial image measurement while moving the reticle stage in the scanning direction. Then, the main controller computes a scanning image plane on which an image of a pattern formed on a reticle is formed by the projection optical system, based on the measurement result of the aerial image of each mark at each movement position. Based on the computation result, the main controller performs focus leveling control of a wafer during scanning exposure. Thus, highly accurate exposure is realized without using a sensor for reticle (mask) position measurement.

Abstract: Light is irradiated on a light-shielding pattern on an object surface side of a projection optical system, and light intensity distribution of the light having passed through the projection optical system and slits is detected while slits of an aerial image measuring unit on the image plane side of the projection optical system are moved within a plane perpendicular to the optical axis of the projection optical system, The information concerning the flare of the projection optical system is computed from the light intensity distribution, so that the influence of resist coated on a wafer used in a conventional exposing method can be eliminated, and highly accurate measurement of information concerning the flare can be realized. Further, measurement of information concerning the flare can be performed in a short time comparing to the exposing method because development process or the like of the wafer is not necessary.

Abstract: An aerial image of a measurement mark arranged on a measurement mask is conformed to a center in an X-axis direction of a slit arranged on a Z tilt stage. While illuminating the measurement mark with an illumination light, a slit plate on which the slit is formed is continuously moved in a Z-axis direction, and based on position information of the slit obtained during the movement and a photoelectric conversion signal outputted from an optical sensor that receives the illumination light from the measurement mark via a projection optical system and the slit, a best focus position is detected. Thus, the best focus position of the projection optical system can be measured in a short period of time.

Abstract: A liquid immersion region (LR) is formed on a measuring member (65) by use of the liquid immersion mechanism (1), and measurement is performed by receiving measurement light through liquid (LQ) which forms the liquid immersion region (LR), in order to determine an exposure condition of a substrate (P). The substrate (P) is exposed by taking into account a difference between a pressure of the liquid (LQ) in the process of measurement and that in the process of exposure and a result of the measurement thus performed.

Abstract: There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Abstract: There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Abstract: In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 ?m. The substrate exhibits a good surface flatness at the time of wafer exposure.

Abstract: Light is irradiated on a light-shielding pattern on an object surface side of a projection optical system and light intensity distribution of the light having passed through the projection optical system and slits is detected while slits of an aerial image measuring unit on the image plane side of the projection optical system are moved within a plane perpendicular to the optical axis of the projection optical system. The information concerning the flare of the projection optical system is computed from the light intensity distribution, so that the influence of resist coated on a wafer used in a conventional exposing method can be eliminated, and highly accurate measurement of information concerning the flare can be realized. Further, measurement of information concerning the flare can be performed in a short time comparing to the exposing method because development process or the like of the wafer is not necessary.

Abstract: A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.

Abstract: A sensor is used at a substrate level in a lithographic projection apparatus having a projection system with a numeric aperture that is greater than 1 and is configured to project a patterned radiation beam onto a target portion of a substrate The sensor includes a radiation-detector; a transmissive plate having a front surface and a back surface, the transmissive plate being positioned such that radiation projected by the projection system passes into the front surface of the transmissive plate and out of the back surface thereof to the radiation detector; and a luminescent layer provided on the back surface of the transmissive plate, the luminescent layer absorbing the radiation and emitting luminescent radiation of a different wavelength, wherein the back surface is rough.