Abstract: Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is ?o? ?o?? ???? 0.5 ?m is selected.

Abstract: An aerial image of a measurement mark (PM) arranged on a measurement mask (Rm) is conformed to a center in an X-axis direction of a slit (122) arranged on a Z tilt stage (38). While illuminating the measurement mark with an illumination light (IL), a slit plate (190) on which the slit (122) is formed is continuously moved in a Z-axis direction, and based on position information of the slit (122) obtained during the movement and a photoelectric conversion signal outputted from an optical sensor (24) that receives the illumination light (IL) from the measurement mark (PM) via a projection optical system (PL) and the slit (122), a best focus position is detected. Thus, the best focus position of the projection optical system can be measured in a short period of time.

Abstract: A coherence factor ? of an alignment system is set to 1 or more, and positional information of a mark is detected from a photodetection signal that corresponds to the mark intensity image of the mark due to a zero order light and light of an odd order diffraction from the mark. When ??1, a beam pair of a zero order light and a light of +1st order diffraction appears without fail with respect to a beam pair of a zero order light and a light of ?1st order diffraction that pass through the same two points on the pupil plane and the positional shift of the mark image caused by both pairs is canceled out, and by the change in mark step or aberration, the change in mark position shift amount is reduced. Accordingly, the mark can be detected with high precision.

Abstract: Provided is an exposure apparatus that is able to prevent liquid from on a measuring part. An exposure apparatus comprises a measuring system (60), which has a first pattern (61) formed on the upper surface of a substrate stage, and a second area (S2) specified on the upper surface in the vicinity of a first area (S1), which includes the first pattern (61), and a second pattern (80) is formed in the second area (S2) so that the liquid (LQ) that has remained so as to span the first area (S1) and the second area (S2) retreats from the first area (S1) and collects in the second area (S2).

Abstract: A main controller moves a reticle stage in a scanning direction, illuminates an area on a reticle including a mark area in which predetermined marks are formed with illumination light, forms an aerial image of at least one mark existing in the mark area via a projection optical system, and measures the aerial image using an aerial image measuring unit. The main controller repeatedly performs such aerial image measurement while moving the reticle stage in the scanning direction. Then, the main controller computes a scanning image plane on which an image of a pattern formed on a reticle is formed by the projection optical system, based on the measurement result of the aerial image of each mark at each movement position. Based on the computation result, the main controller performs focus leveling control of a wafer during scanning exposure. Thus, highly accurate exposure is realized without using a sensor for reticle (mask) position measurement.

Abstract: There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Abstract: There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Abstract: Since a wafer mark formed on a wafer has a periodic structure that weakens the intensity of even-order diffraction light rather than the intensity of odd-order diffraction light that is the reflected light of illumination light from a light source of an alignment system, measurement error of positional information of the wafer mark caused by the even-order diffraction light is reduced. Further, there is no need to set the duty ratio of the wafer mark to 1:1, so that the reflectance of the entire mark can be enhanced and it becomes possible to easily measure the mark position by the alignment system.

Abstract: There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Abstract: A part of exposure beam through a liquid via a projection optical system enters a light-transmitting section, enters an optical member without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.

Abstract: A part of exposure beam through a liquid via a projection optical system enters a light-transmitting section, enters an optical member without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.

Abstract: A reticle holder 18 has; a first suction section 63 facing a precision warrantable area AR1 having a predetermined surface precision, of a lower face Ra of a reticle R; a second suction section 64 facing a precision unwarrantable area AR2 outside of the precision warrantable area AR1; a pore 70a connected to a suction apparatus which draws out gas in a space between the lower face Ra of the reticle R and the first suction section 63, and a pore 70b connected to the suction apparatus 72 which draws out gas in the space between the lower face Ra of the reticle R and the second suction section 64. As a result, the reticle can be held stably, without deteriorating the surface precision of the precision warrantable area.

Abstract: A reticle holder has a first suction section facing a precision warrantable area having a predetermined surface precision, of a lower face of a reticle, a second suction section facing a precision unwarrantable area outside of the precision warrantable area, a pore connected to a suction apparatus that draws out gas in a space between the lower face of the reticle and the first suction section, and a pore connected to the suction apparatus and that draws out gas in the space between the lower face of the reticle and the second suction section. As a result, the reticle can be held stably, without deteriorating the surface precision of the precision warrantable area.

Abstract: A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is ?o? ?o?? ???? 0.5 ?m is selected.

Abstract: A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.

Abstract: A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.

Abstract: In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 ?m. The substrate exhibits a good surface flatness at the time of wafer exposure.

Abstract: There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.