Abstract: One or more techniques and systems for starting an output driver and an associated start-up circuit are provided herein. In some embodiments, a voltage provider is configured to charge a charge store to a pre-turn-on voltage. In some embodiments, an output driver is configured to control a connection between the charge store and the output driver. For example, the connection enables the charge store to discharge a voltage to the output driver, thus starting the output driver. Accordingly, a response time associated with starting the output driver is mitigated at least because the charge store is charged to the pre-turn-on voltage and connected to the output driver such that a gate of the driver is biased in a sudden fashion. In this manner, the driver is turned on more quickly. Additionally, effects associated with process, voltage, and temperature variations are mitigated, for example.

Abstract: A circuit includes a first node, a second node, a pull-up circuit selectively coupled to the first node or the second node, a pull-down circuit selectively coupled to the first node or the second node, and a resistive circuit. The circuit is configured to operate in a full-swing mode or in a de-emphasis mode based on an electrical coupling of the resistive circuit between the first node and the second node.

Abstract: A D flip-flop includes a first switch, a level shifter, and a second switch therein. The first switch includes a first input and a first output. The level shifter includes a second input coupled to the first input, and a second output. The second switch includes a third input coupled to the second output, and a third output. The first input and the third output form an input and an output of the D flip-flop.

Abstract: In a semiconductor device design method performed by at least one processor, location data of at least one electrical component in a layout of a semiconductor device is extracted by the at least one processor. Voltage data associated with the at least one electrical component and based on a simulation of an operation of the semiconductor device is extracted by the at least one processor. Based on the extracted location data, the extracted voltage data is incorporated, by the at least one processor, in the layout to generate a modified layout of the semiconductor device.

Abstract: A voltage swing decomposition circuit includes first and second clamp circuits and a protection circuit. The first clamp circuit is configured to clamp an output node of the first clamp circuit at a first voltage level when an input node of the voltage swing decomposition circuit has a voltage higher than the first voltage level. The second clamp circuit is configured to clamp an output node of the second clamp circuit at a second voltage level, higher than the first level, when the voltage of the input node is lower than the second voltage level. The protection circuit is coupled to the output nodes of the first and second clamp circuits, and is configured to selectively set an output node of the protection circuit to the first or second voltage level. The first and second clamp circuits are coupled together by the output node of the protection circuit.

Abstract: A circuit includes a switching circuit, a node, and a tracking circuit. The switching circuit has a first terminal, a second terminal, and a third terminal. The node has a node voltage. The tracking circuit is electrically coupled to the third terminal and the node, and configured to receive the node voltage and generate a control voltage at the third terminal based on the node voltage.

Abstract: A method for performing a clock and data recovery includes providing data and a clock; determining early/late values of the data to generate a first-order phase code using the data and the clock; and accumulating first-order phase codes retrieved from different finite state machine (FSM) cycles to generate a second-order phase code. A plurality of candidate total phase codes is generated from the second-order phase code. A multiplexing is performed to the plurality of candidate total phase codes to output one of the plurality of candidate total phase codes as a total phase code. The multiplexing is controlled by the first-order phase code. A brake machine may be implemented to prevent over-compensation of phases.

Abstract: A circuit includes a first node, a second node, a pull-up circuit selectively coupled to the first node or the second node, a pull-down circuit selectively coupled to the first node or the second node, and a resistive circuit. The circuit is configured to operate in a full-swing mode or in a de-emphasis mode based on an electrical coupling of the resistive circuit between the first node and the second node.

Abstract: A method for performing a clock and data recovery includes providing data and a clock; determining early/late values of the data to generate a first-order phase code using the data and the clock; and accumulating first-order phase codes retrieved from different finite state machine (FSM) cycles to generate a second-order phase code. A plurality of candidate total phase codes is generated from the second-order phase code. A multiplexing is performed to the plurality of candidate total phase codes to output one of the plurality of candidate total phase codes as a total phase code. The multiplexing is controlled by the first-order phase code. A brake machine may be implemented to prevent over-compensation of phases.

Abstract: A voltage scale down circuit includes an input node configured to receive a voltage input within an input voltage range. At least two voltage followers are coupled to the input node. The voltage scale down circuit also includes at least two scalers. Each scaler is coupled to a respective voltage follower. An output node is coupled to the at least two scalers. Each voltage follower is configured to receive the voltage input. Each voltage follower is configured to supply a respective voltage for the voltage input within a narrower portion of the input voltage range. The output node is configured to supply a voltage output linearly related to the voltage input. An output voltage range of the voltage output is narrower than the input voltage range.

Abstract: A power-on bias circuit including a first inverter having an input terminal and an output terminal, the input terminal functions as an input terminal of the power-up bias circuit; a second inverter having an input terminal and an output terminal, the output terminal of the second inverter functions as the output terminal for the power-on bias circuit; and a Schmitt Trigger circuit having an input terminal and an output terminal, wherein the input terminal of the Schmitt Trigger circuit is connected to the output terminal of the first inverter, the output terminal of the Schmitt Trigger circuit is connected to the input terminal of the second inverter, the first inverter, the second inverter and the Schmitt Trigger circuit are each in electrical communication with a voltage input terminal and ground.

Abstract: An input buffer for interfacing a high voltage signal received at an input node to a low voltage circuit comprising low voltage devices is provided. The buffer includes a threshold adjustment circuit including an inverter coupled to a threshold adjusted output node. The inverter includes low voltage devices and is coupled between a high supply voltage node and a ground node. The inverter includes a first and second transistors having biasing nodes coupled to a low voltage supply node of the low voltage circuit and coupled to the threshold adjusted output node. The adjustment circuit provides at the threshold adjusted output node an inverted signal corresponding to the high voltage input signal. The buffer also includes a level shifting circuit including low voltage devices and provides a low voltage signal corresponding to the high voltage input signal in response to said inverted signal.

Abstract: A power-on bias circuit including a first inverter having an input terminal and an output terminal, the input terminal functions as an input terminal of the power-up bias circuit; a second inverter having an input terminal and an output terminal, the output terminal of the second inverter functions as the output terminal for the power-on bias circuit; and a Schmitt Trigger circuit having an input terminal and an output terminal, wherein the input terminal of the Schmitt Trigger circuit is connected to the output terminal of the first inverter, the output terminal of the Schmitt Trigger circuit is connected to the input terminal of the second inverter, the first inverter, the second inverter and the Schmitt Trigger circuit are each in electrical communication with a voltage input terminal and ground.

Abstract: Recent efforts are underway to develop LSI circuits that operate at power supply voltages of 1-V or lower. It is a desire that this low core voltage circuits interface to 3.3-V I/O supply. A charge pump level converter for dual power supply application is proposed using low power and high speed interface to higher I/O supply. This circuit does not consume DC power it is suitable for low power and high speed interface and can be implemented using complementary metal-oxide-semiconductor (CMOS) fabrication processes.

Abstract: A layout design for I/O cell area/bond pad area interfaces, and a method of form the same, comprising: a substrate having an I/O cell area and a bond pad area separated by a trench area; and multiple metal lines over the substrate. The multiple metal lines including a lowermost metal line, lower intermediate metal lines, upper intermediate metal lines and an uppermost metal line, wherein at least one of the upper intermediate metal lines includes a respective extension portion, that is contiguous with, or separate therefrom, extending into at least through the trench area.

Abstract: Recent efforts are underway to develop LSI circuits that operate at power supply voltages of 1-V or lower. It is a desire that this low core voltage circuits interface to 3.3-V I/O supply. A charge pump level converter for dual power supply application is proposed using low power and high speed interface to higher I/O supply. This circuit does not consume DC power it is suitable for low power and high speed interface and can be implemented using complementary metal-oxide-semiconductor (CMOS) fabrication processes.