Patents by Inventor Tsung-Kuan Allen Chou

Tsung-Kuan Allen Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8644125
    Abstract: A seek-scan probe (SSP) memory involves multiple-wafer bonding needing precision small gaps in between. Solder reflow bonding is typically used to join the wafers due to its reliability and ability to hermetically seal. However, solder reflow bonding may not provide a consistently controllable gap due to flowing solder during the bonding process. Thus, a bond stop technique and process is used to provide accurate cantilever to media gap control.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: February 4, 2014
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, Nickolai Belov, John Heck
  • Patent number: 8624616
    Abstract: A suspended IO trace design for SSP cantilever Read/Write is described. Instead of having the whole I/O trace attached to surface of the cantilever, the cantilever is designed with fish-bone-like support and the I/O traces are anchored to cantilever structures 110 at some specific attachment locations with dielectric insulation in between. This design provides very compliant trace compared to cantilever's see-saw actuation around the torsional beam pivot and is also insensitive to residual stress variations from I/O trace in fabrication.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: January 7, 2014
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, David Harrar, II
  • Publication number: 20130141131
    Abstract: A suspended IO trace design for SSP cantilever Read/Write is described. Instead of having the whole I/O trace attached to surface of the cantilever, the cantilever is designed with fish-bone-like support and the I/O traces are anchored to cantilever structures 110 at some specific attachment locations with dielectric insulation in between. This design provides very compliant trace compared to cantilever's see-saw actuation around the torsional beam pivot and is also insensitive to residual stress variations from I/O trace in fabrication.
    Type: Application
    Filed: July 1, 2008
    Publication date: June 6, 2013
    Inventors: Tsung-Kuan Allen Chou, David Harrar, II
  • Patent number: 8411550
    Abstract: MEMS storage devices and associated systems and structures are generally described. In one example, a micro-electro-mechanical (MEMS) storage device includes a substrate, a lateral actuation structure coupled with the substrate, a micro-electro-mechanical (MEMS) probe coupled with the lateral actuation structure, the MEMS probe having a first end, a second end having a probe tip, and a longitudinal axis extending between the first end and the second end, wherein the second end can be actuated in a direction substantially normal to a surface of the substrate, and one or more stop beam structures coupled with the lateral actuation structure to restrict motion of the MEMS probe in the direction substantially normal to the surface of the substrate.
    Type: Grant
    Filed: October 27, 2008
    Date of Patent: April 2, 2013
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, David Harrar, II
  • Publication number: 20130058202
    Abstract: A seek-scan probe (SSP) memory involves multiple-wafer bonding needing precision small gaps in between. Solder reflow bonding is typically used to join the wafers due to its reliability and ability to hermetically seal. However, solder reflow bonding may not provide a consistently controllable gap due to flowing solder during the bonding process. Thus, a bond stop technique and process is used to provide accurate cantilever to media gap control.
    Type: Application
    Filed: September 30, 2008
    Publication date: March 7, 2013
    Inventors: Tsung-Kuan Allen Chou, Nickolai Belov, John Heck
  • Patent number: 8338813
    Abstract: An apparatus comprising a substrate, a heater formed on the substrate, and a phase-change layer formed on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer. A process comprising forming a heater on a substrate and forming a phase-change layer on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer.
    Type: Grant
    Filed: December 4, 2009
    Date of Patent: December 25, 2012
    Assignee: Intel Corporation
    Inventors: Qing Ma, Valluri R. Rao, Tsung-Kuan Allen Chou
  • Patent number: 8233373
    Abstract: A seek-scan-probe memory device, utilizing a media electrode to allow active cantilevers to contact the storage media, and a pull electrode to pull up cantilevers away from the storage media when in an inactive mode. Other embodiments are described and claimed.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: July 31, 2012
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, Qing Ma
  • Publication number: 20110216642
    Abstract: A seek-scan-probe memory device, utilizing a media electrode to allow active cantilevers to contact the storage media, and a pull electrode to pull up cantilevers away from the storage media when in an inactive mode. Other embodiments are described and claimed.
    Type: Application
    Filed: May 17, 2011
    Publication date: September 8, 2011
    Inventors: Tsung-Kuan Allen Chou, Qing Ma
  • Patent number: 7924122
    Abstract: Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.
    Type: Grant
    Filed: July 6, 2009
    Date of Patent: April 12, 2011
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, Hanan Bar
  • Patent number: 7898371
    Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: March 1, 2011
    Assignee: Intel Corporation
    Inventors: Hanan Bar, Tsung-Kuan Allen Chou
  • Patent number: 7796492
    Abstract: A seek-scan-probe memory device, utilizing a media electrode to allow active cantilevers to contact the storage media, and a pull electrode to pull up cantilevers away from the storage media when in an inactive mode. Other embodiments are described and claimed.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: September 14, 2010
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, Qing Ma
  • Patent number: 7796493
    Abstract: In one embodiment, the present invention includes an apparatus having a first cantilever structure to move in a vertical direction, including a first plate formed of a conductive material, an insulation beam adapted on a portion of the first plate, and a second cantilever structure adapted on the insulation beam and including a second plate formed of a conductive material, where an air gap is present between the first and second plates. Other embodiments are described and claimed.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: September 14, 2010
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, Donald Adams, Robert Stark
  • Patent number: 7750333
    Abstract: An apparatus comprising a substrate, a heater formed on the substrate, and a phase-change layer formed on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer. A process comprising forming a heater on a substrate and forming a phase-change layer on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer.
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: July 6, 2010
    Assignee: Intel Corporation
    Inventors: Qing Ma, Valluri R. Rao, Tsung-Kuan Allen Chou
  • Publication number: 20100103806
    Abstract: MEMS storage devices and associated systems and structures are generally described. In one example, a micro-electro-mechanical (MEMS) storage device includes a substrate, a lateral actuation structure coupled with the substrate, a micro-electro-mechanical (MEMS) probe coupled with the lateral actuation structure, the MEMS probe having a first end, a second end having a probe tip, and a longitudinal axis extending between the first end and the second end, wherein the second end can be actuated in a direction substantially normal to a surface of the substrate, and one or more stop beam structures coupled with the lateral actuation structure to restrict motion of the MEMS probe in the direction substantially normal to the surface of the substrate.
    Type: Application
    Filed: October 27, 2008
    Publication date: April 29, 2010
    Inventors: Tsung-Kuan Allen Chou, David Harrar, II
  • Patent number: 7705699
    Abstract: Embodiments of the invention describe a contact switch, which may include a bottom electrode structure including a bottom actuation electrode and a top electrode structure including a top actuation electrode and one or more stoppers able to maintain a predetermined gap between the top electrode and the bottom electrode when the switch is in a collapsed state.
    Type: Grant
    Filed: June 27, 2007
    Date of Patent: April 27, 2010
    Assignee: Intel Corporation
    Inventors: Tsung-Kuan Allen Chou, Hanan Bar
  • Publication number: 20100080051
    Abstract: An apparatus comprising a substrate, a heater formed on the substrate, and a phase-change layer formed on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer. A process comprising forming a heater on a substrate and forming a phase-change layer on the heater. The heater comprises a heater layer and first and second electrodes electrically coupled to the heater layer.
    Type: Application
    Filed: December 4, 2009
    Publication date: April 1, 2010
    Inventors: Qing Ma, Valluri R. Rao, Tsung-Kuan Allen Chou
  • Patent number: 7687297
    Abstract: In one embodiment, the present invention includes a method for forming a sacrificial oxide layer on a base layer of a microelectromechanical systems (MEMS) probe, patterning the sacrificial oxide layer to provide a first trench pattern having a substantially rectangular form and a second trench pattern having a substantially rectangular portion and a lateral portion extending from the substantially rectangular portion, and depositing a conductive layer on the patterned sacrificial oxide layer to fill the first and second trench patterns to form a support structure for the MEMS probe and a cantilever portion of the MEMS probe. Other embodiments are described and claimed.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: March 30, 2010
    Assignee: Intel Corporation
    Inventors: John Heck, Tsung-Kuan Allen Chou
  • Publication number: 20100072043
    Abstract: An electromechanical switch with a rigidified electrode includes an actuation electrode, a suspended electrode, a contact, and a signal line. The actuation electrode is disposed on a substrate. The suspended electrode is suspended proximate to the actuation electrode and includes a rigidification structure. The contact is mounted to the suspended electrode. The signal line is positioned proximate to the suspended electrode to form a closed circuit with the contact when an actuation voltage is applied between the actuation electrode and the suspended electrode.
    Type: Application
    Filed: September 4, 2009
    Publication date: March 25, 2010
    Applicant: INTEL CORPORATION
    Inventors: Hanan Bar, Tsung-Kuan Allen Chou
  • Publication number: 20100039919
    Abstract: An information storage device comprises a media including a ferroelectric layer formed over a conductive layer, a tip substrate including a bottom actuation electrode, the tip substrate arranged opposite the media, and a cantilever connected with the tip substrate at a fulcrum and actuatable toward the media. The cantilever includes a first portion and a second portion, with the fulcrum located between the first portion and the second portion. The first portion is conductive and arranged over the bottom actuation electrode while a top actuation electrode is associated with the second portion so that the top actuation electrode is opposite the media. A first potential is applied to the bottom actuation electrode to generate electrostatic force between the bottom actuation electrode and the first portion and a second potential is applied to the top actuation electrode to generate electrostatic force between the top actuation electrode and the conductive layer.
    Type: Application
    Filed: September 10, 2008
    Publication date: February 18, 2010
    Applicant: NANOCHIP, INC.
    Inventors: Tsung-Kuan Allen Chou, David Harrar, II
  • Patent number: 7622780
    Abstract: An apparatus comprising a substrate having a probe suspension formed thereon, a see-saw probe coupled to the probe suspension, the see-saw probe including first and second ends, with a tip projecting from a side of the first end, and an actuation electrode formed on the substrate, the actuation electrode positioned to exert a force upon the second end of the see-saw probe. A process comprising forming a probe suspension on a substrate, coupling a see-saw probe to the probe suspension, the see-saw probe including first and second ends, with a tip projecting from a side of the first end, and forming an actuation electrode on the substrate, the actuation electrode positioned to exert a force upon the second end of the see-saw probe.
    Type: Grant
    Filed: December 21, 2006
    Date of Patent: November 24, 2009
    Assignee: Intel Corporation
    Inventor: Tsung-Kuan Allen Chou