Patents by Inventor Tsung-Min Hsieh
Tsung-Min Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9321635Abstract: A method for releasing a diaphragm of a micro-electro-mechanical systems (MEMS) device at a stage of semi-finished product. The method includes pre-wetting the MEMS device in a pre-wetting solution to at least pre-wet a sidewall surface of a cavity of the MEMS device. Then, a wetting process after the step of pre-wetting the MEMS device is performed to etch a dielectric material of a dielectric layer for holding the diaphragm, wherein a sensing portion of the diaphragm is released from the dielectric layer.Type: GrantFiled: November 28, 2013Date of Patent: April 26, 2016Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 9314176Abstract: An apparatus and a method for processing signal are provided. The signal processing apparatus comprises an input interface and a processing unit. The input interface receives smoothing parameters and a to-be-separated signal. The processing unit establishes an upper extreme envelope and a lower extreme envelope of the to-be-separated signal, and calculates a mean envelope between the upper extreme envelope and the lower extreme envelope. The processing unit performs smoothing according to the smoothing parameters and the mean envelope to generate a smoothed mean envelope, and determines a trend component or a non-trend component according to the smoothed mean envelope.Type: GrantFiled: April 19, 2012Date of Patent: April 19, 2016Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Sun-Hua Pao, Chieh-Neng Young, Tsung-Min Hsieh, Yio-Wha Shau
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Patent number: 9271087Abstract: A MEMS microphone package device includes a MEMS microphone chip as an integrated circuit chip. An acoustic sensing structure is embedded in the integrated circuit chip. An adhesive structure adheres on outer sidewall of the microphone chip. A bottom portion of the adhesive structure protrudes out from first surface of the microphone chip and adheres on a surface of a substrate, having interconnection structure, to form a first seal ring. A space between the acoustic sensing structure and the substrate and sealed by the first seal ring forms a second chamber. A cover adheres to top portion of the adhesive structure, covering over the cavity on the second surface of the microphone chip. The top portion of the adhesive structure forms as a second seal ring. A space between the cover and the second surface of the microphone chip and sealed by the second seal ring forms a first chamber.Type: GrantFiled: October 2, 2014Date of Patent: February 23, 2016Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Chih-Hsien Chung, Yong-Wei Chen, Jhyy-Cheng Liou
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Publication number: 20150315013Abstract: A micro-electrical-mechanical system (MEMS) microphone includes a MEMS structure, having a substrate, a diaphragm, and a backplate, wherein the substrate has a cavity and the backplate is between the cavity and the diaphragm. The backplate has multiple venting holes, which are connected to the cavity and allows the cavity to extend to the diaphragm. Further, an adhesive layer is disposed on the substrate, surrounding the cavity. A cover plate is adhered on the adhesive layer, wherein the cover plate has an acoustic hole, dislocated from the cavity without direct connection.Type: ApplicationFiled: July 11, 2014Publication date: November 5, 2015Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Cheng-Wei Tsai, Jhyy-Cheng Liou
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Patent number: 9126827Abstract: A method for fabricating MEMS device includes providing a silicon substrate. A structural dielectric layer is formed over a first side of the silicon substrate. Structure elements are embedded in the structural dielectric layer. The structure elements include a conductive backplate disposed over the silicon substrate, having venting holes and protrusion structures on top of the conductive backplate; and diaphragm located above the conductive backplate by a distance. A chamber is formed between the diaphragm and the conductive backplate. A cavity is formed in the silicon substrate at a second side. The cavity corresponds to the structure elements. An isotropic etching is performed on a dielectric material of the structural dielectric layer to release the structure elements. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate. A second side of the diaphragm is exposed to an environment space.Type: GrantFiled: January 23, 2015Date of Patent: September 8, 2015Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Publication number: 20150147841Abstract: A method for releasing a diaphragm of a micro-electro-mechanical systems (MEMS) device at a stage of semi-finished product. The method includes pre-wetting the MEMS device in a pre-wetting solution to at least pre-wet a sidewall surface of a cavity of the MEMS device. Then, a wetting process after the step of pre-wetting the MEMS device is performed to etch a dielectric material of a dielectric layer for holding the diaphragm, wherein a sensing portion of the diaphragm is released from the dielectric layer.Type: ApplicationFiled: November 28, 2013Publication date: May 28, 2015Applicant: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Publication number: 20150132880Abstract: A method for fabricating MEMS device includes providing a silicon substrate. A structural dielectric layer is formed over a first side of the silicon substrate. Structure elements are embedded in the structural dielectric layer. The structure elements include a conductive backplate disposed over the silicon substrate, having venting holes and protrusion structures on top of the conductive backplate; and diaphragm located above the conductive backplate by a distance. A chamber is formed between the diaphragm and the conductive backplate. A cavity is formed in the silicon substrate at a second side. The cavity corresponds to the structure elements. An isotropic etching is performed on a dielectric material of the structural dielectric layer to release the structure elements. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate. A second side of the diaphragm is exposed to an environment space.Type: ApplicationFiled: January 23, 2015Publication date: May 14, 2015Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8987842Abstract: A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.Type: GrantFiled: September 14, 2012Date of Patent: March 24, 2015Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8934649Abstract: A MEMS device includes substrate having a cavity. A dielectric layer is disposed on a second side of substrate at periphery of the cavity. A backplate structure is formed with the dielectric layer on a first side of the substrate and exposed by the cavity. The backplate structure includes at least a first backplate and a second backplate. The first backplate and the second backplate are electric disconnected and have venting holes to connect the cavity and the chamber. A diaphragm is disposed above the backplate structure by a distance, so as to form a chamber between the backplate structure and the diaphragm. A periphery of the diaphragm is embedded in the dielectric layer. The diaphragm serves as a common electrode. The first backplate and the second backplate respectively serve as a first electrode unit and a second electrode unit in conjugation with the diaphragm to form separate two capacitors.Type: GrantFiled: August 29, 2013Date of Patent: January 13, 2015Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Jhyy-Cheng Liou
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Publication number: 20140187880Abstract: A method for measuring a physiological signal is provided. The method is applicable to optical physiological measurement with at least two types of light sources. The method includes a processing for adjusting amplitudes of signals of the at least two types of light sources to a predetermined ratio by adjusting intensities of the light sources, so as to increase a signal dynamic range as well as a signal-to-noise ratio.Type: ApplicationFiled: October 10, 2013Publication date: July 3, 2014Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Tsung-Min Hsieh, Chen-Liang Lin, Jun-Chao Zhao, Hung-Sen Tsao
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Publication number: 20140077317Abstract: A MEMS device includes a silicon substrate and a structural dielectric layer. The silicon substrate has a cavity. The structural dielectric layer is disposed on the silicon substrate. The structural dielectric layer has a space above the cavity of the silicon substrate and holds a plurality of structure elements within the space, including: a conductive backplate, over the silicon substrate, having a plurality of venting holes and a plurality of protrusion structures on top of the conductive backplate; and a diaphragm, located above the conductive backplate by a distance, wherein a chamber is formed between the diaphragm and the conductive backplate, and is connected to the cavity of the silicon substrate through the venting holes. A first side of the diaphragm is exposed by the chamber and faces to the protrusion structures of the conductive backplate and a second side of the diaphragm is exposed to an environment space.Type: ApplicationFiled: September 14, 2012Publication date: March 20, 2014Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8673732Abstract: Method is to fabricate a MEMS device with a substrate. The substrate has through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.Type: GrantFiled: May 31, 2013Date of Patent: March 18, 2014Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8606836Abstract: An apparatus and method for frequency division and filtering are provided. The apparatus includes a memory unit, an extrema calculation unit, and an envelope calculation unit. The memory unit is for storing sample data. The extrema calculation unit is for outputting and storing a number of maximum values and a number of minimum values to the memory unit according to the sample data. The envelope calculation unit is for calculating a mean envelope according to the maximum values and the minimum values, wherein within a duration when the envelope calculation unit respectively calculates an upper envelope and a lower envelope according to the maximum values and the minimum values, the envelope calculation unit outputs a value of the mean envelope to the memory unit according to a value of the upper envelope and a value of the lower envelope with respect to a corresponding identical address.Type: GrantFiled: August 25, 2010Date of Patent: December 10, 2013Assignee: Industrial Technology Research InstituteInventors: Ting-Hsuan Chen, Gaung-Hui Gu, Ying-Chiang Hu, Tsung-Min Hsieh, Jun-Chao Zhao
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Publication number: 20130260504Abstract: Method is to fabricate a MEMS device with a substrate. The substrate has through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.Type: ApplicationFiled: May 31, 2013Publication date: October 3, 2013Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8502329Abstract: A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.Type: GrantFiled: September 1, 2011Date of Patent: August 6, 2013Assignee: Solid State System Co., Ltd.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Patent number: 8464589Abstract: A MEMS structure includes a substrate, a structural dielectric layer, and a diaphragm. A structural dielectric layer is disposed over the substrate. The diaphragm is held by the structural dielectric layer at a peripheral end. The diaphragm includes multiple trench/ridge rings at a peripheral region surrounding a central region of the diaphragm. A corrugated structure is located at the central region of the diaphragm, surrounded by the trench/indent rings.Type: GrantFiled: October 14, 2010Date of Patent: June 18, 2013Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Li-Chi Tsao, Jhyy-Cheng Liou
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Publication number: 20130056841Abstract: A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.Type: ApplicationFiled: September 1, 2011Publication date: March 7, 2013Applicant: SOLID STATE SYSTEM CO., LTD.Inventors: Tsung-Min Hsieh, Chien-Hsing Lee, Jhyy-Cheng Liou
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Publication number: 20120310600Abstract: An apparatus and a method for processing signal are provided. The signal processing apparatus comprises an input interface and a processing unit. The input interface receives smoothing parameters and a to-be-separated signal. The processing unit establishes an upper extreme envelope and a lower extreme envelope of the to-be-separated signal, and calculates a mean envelope between the upper extreme envelope and the lower extreme envelope. The processing unit performs smoothing according to the smoothing parameters and the mean envelope to generate a smoothed mean envelope, and determines a trend component or a non-trend component according to the smoothed mean envelope.Type: ApplicationFiled: April 19, 2012Publication date: December 6, 2012Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Sun-Hua Pao, Chieh-Neng Young, Tsung-Min Hsieh, Yio-Wha Shau
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Patent number: 8258591Abstract: The present invention provides a MEMS device, be implemented on many MEMS device, such as MEMS microphone, MEMS speaker, MEMS accelerometer, MEMS gyroscope. The MEMS device includes a substrate. A dielectric structural layer is disposed over the substrate, wherein the dielectric structural layer has an opening to expose the substrate. A diaphragm layer is disposed over the dielectric structural layer, wherein the diaphragm layer covers the opening of the dielectric structural layer to form a chamber. A conductive electrode structure is adapted in the diaphragm layer and the substrate to store nonvolatile charges.Type: GrantFiled: January 16, 2008Date of Patent: September 4, 2012Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh
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Patent number: 8217474Abstract: A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space.Type: GrantFiled: December 28, 2009Date of Patent: July 10, 2012Assignee: Solid State System Co., Ltd.Inventors: Chien-Hsing Lee, Tsung-Min Hsieh, Jhyy-Cheng Liou