Abstract: A method of forming a thin film transistor (TFT) on a plastic sheet. An etching stop layer is formed on a glass substrate. A buffer layer is formed on the etching stop layer. At least one TFT structure is formed on part of the buffer layer. A passivation layer is formed on the TFT structure and the buffer layer. A plastic layer is formed on the passivation layer. The glass substrate and the etching stop layer are removed. Thus, the invention can transfer the TFT structure from the glass plate to the plastic sheet without damage from the process temperature of the TFT.

Abstract: A method of forming an indium tin oxide (ITO) layer on a heat-sensitive substrate. An amorphous ITO layer is formed on the substrate by a sputtering process, wherein the temperature of the sputtering process is controlled at room temperature and, in situ, hydrogen gas with a flow rate of 1˜5 sccm is introduced in the sputtering process. Part of the amorphous ITO layer is removed by an oxalic acid solution to form an amorphous ITO pattern on the substrate. A heat treatment whose temperature is below 150° C. is performed to turn the amorphous ITO pattern into a crystalline ITO layer. Thus, a crystalline and flat ITO layer can be formed on the heat-sensitive substrate.

Abstract: A color LCD panel in which a plurality of OLED are formed on the upper surface of the lower panel of the color LCD panel to be the back light source of the color LCD panel is disclosed in the invention. Each individual OLED corresponds to a pixel of the LCD panel in order to be the independent self-emitting light source of the pixel. Each OLED is always on and ready to emit one of the three primary colors, red, green, or blue. Thus, every pixel of the color LCD panel has its independent self-emitting light source. Therefore, the back light module and color filter in conventional color LCD panels are not needed.

Abstract: A polysilicon thin film transistor with a self-aligned LDD structure has a polysilicon layer formed on a transparent insulating substrate. The polysilicon layer consists of a channel region, an LDD structure on two sides of the channel region, and a source/drain region on two sides of the LDD structure. A gate insulating layer is formed on the polysilicon layer, a first metal layer is patterned on the gate insulating layer to cover the channel region, and a second metal layer is patterned on the first metal layer to cover the channel region.

Abstract: An organic backlight device for liquid crystal display application is provided. The organic backlight device has organic light emitting layers, which are arranged in such as linear arrangement and controlled by a driving circuit, to emit light at least three different bandwidths by turns, for example, in red, green and blue bandwidths. By emitting light with a high frequency by turns, persistence of color vision is produced to a viewer. A thin and light backlight source with high brightness and uniformity is therefore obtained.